JPS5617345A - Producing irradiation sensitive mixture and relief picture image - Google Patents

Producing irradiation sensitive mixture and relief picture image

Info

Publication number
JPS5617345A
JPS5617345A JP9629080A JP9629080A JPS5617345A JP S5617345 A JPS5617345 A JP S5617345A JP 9629080 A JP9629080 A JP 9629080A JP 9629080 A JP9629080 A JP 9629080A JP S5617345 A JPS5617345 A JP S5617345A
Authority
JP
Japan
Prior art keywords
denotes
sensitive mixture
group
picture image
alkyl
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9629080A
Other languages
English (en)
Other versions
JPS6320325B2 (ja
Inventor
Buuru Geruharuto
Rutsukeruto Hansu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hoechst AG
Original Assignee
Hoechst AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoechst AG filed Critical Hoechst AG
Publication of JPS5617345A publication Critical patent/JPS5617345A/ja
Publication of JPS6320325B2 publication Critical patent/JPS6320325B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G65/00—Macromolecular compounds obtained by reactions forming an ether link in the main chain of the macromolecule
    • C08G65/02—Macromolecular compounds obtained by reactions forming an ether link in the main chain of the macromolecule from cyclic ethers by opening of the heterocyclic ring
    • C08G65/04—Macromolecular compounds obtained by reactions forming an ether link in the main chain of the macromolecule from cyclic ethers by opening of the heterocyclic ring from cyclic ethers only
    • C08G65/06—Cyclic ethers having no atoms other than carbon and hydrogen outside the ring
    • C08G65/16—Cyclic ethers having four or more ring atoms
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L69/00—Compositions of polycarbonates; Compositions of derivatives of polycarbonates
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials For Photolithography (AREA)
  • Polymerisation Methods In General (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Non-Silver Salt Photosensitive Materials And Non-Silver Salt Photography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
JP9629080A 1979-07-16 1980-07-16 Producing irradiation sensitive mixture and relief picture image Granted JPS5617345A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19792928636 DE2928636A1 (de) 1979-07-16 1979-07-16 Strahlungsempfindliches gemisch und verfahren zur herstellung von reliefbildern

Publications (2)

Publication Number Publication Date
JPS5617345A true JPS5617345A (en) 1981-02-19
JPS6320325B2 JPS6320325B2 (ja) 1988-04-27

Family

ID=6075816

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9629080A Granted JPS5617345A (en) 1979-07-16 1980-07-16 Producing irradiation sensitive mixture and relief picture image

Country Status (9)

Country Link
US (1) US4311782A (ja)
EP (1) EP0022571B1 (ja)
JP (1) JPS5617345A (ja)
AT (1) ATE2099T1 (ja)
AU (1) AU533172B2 (ja)
BR (1) BR8004395A (ja)
CA (1) CA1133743A (ja)
DE (2) DE2928636A1 (ja)
ZA (1) ZA804267B (ja)

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6246520A (ja) * 1985-08-23 1987-02-28 Mitsubishi Electric Corp 露光装置
JPS6310153A (ja) * 1986-07-02 1988-01-16 Konica Corp 感光性組成物および感光性平版印刷版
EP0410606A2 (en) 1989-07-12 1991-01-30 Fuji Photo Film Co., Ltd. Siloxane polymers and positive working light-sensitive compositions comprising the same
EP0565006A2 (en) 1992-04-06 1993-10-13 Fuji Photo Film Co., Ltd. Method for preparing PS plate
EP0747768A2 (en) 1995-06-05 1996-12-11 Fuji Photo Film Co., Ltd. Chemically amplified positive resist composition
EP0788031A1 (en) 1996-02-05 1997-08-06 Fuji Photo Film Co., Ltd. Positive working photosensitive composition
US6010826A (en) * 1994-10-13 2000-01-04 Nippon Zeon Co., Ltd. Resist composition
JP2000347411A (ja) * 1999-06-08 2000-12-15 Matsushita Electric Ind Co Ltd パターン形成材料およびパターン形成方法
US6309795B1 (en) 1996-01-26 2001-10-30 Nippon Zeon Co., Ltd. Resist composition
US6410204B1 (en) 1999-09-27 2002-06-25 Fuji Photo Film Co., Ltd. Positive photoresist composition
US6828078B2 (en) 2000-08-29 2004-12-07 Jsr Corporation Composition having refractive index sensitively changeable by radiation and method for forming refractive index pattern
EP1627736A1 (en) 2004-08-18 2006-02-22 Konica Minolta Medical & Graphic, Inc. Method of manufacturing light sensitive planographic printing plates and method of using the same
US7071255B2 (en) 2001-02-19 2006-07-04 Jsr Corporation Radiation-sensitive composition capable of having refractive index distribution
US7108954B2 (en) 2000-12-11 2006-09-19 Jsr Corporation Radiation-sensitive composition changing in refractive index and method of changing refractive index
US7125647B2 (en) 2001-03-13 2006-10-24 Jsr Corporation Radiation-sensitive composition changing in refractive index and utilization thereof

Families Citing this family (54)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3144480A1 (de) * 1981-11-09 1983-05-19 Hoechst Ag, 6230 Frankfurt Lichtempfindliches gemisch und daraus hergestelltes lichtempfindliches kopiermaterial
DE3144499A1 (de) * 1981-11-09 1983-05-19 Hoechst Ag, 6230 Frankfurt Lichtempfindliches gemisch und daraus hergestelltes lichtempfindliches kopiermaterial
DE3151078A1 (de) * 1981-12-23 1983-07-28 Hoechst Ag, 6230 Frankfurt Verfahren zur herstellung von reliefbildern
US4491628A (en) * 1982-08-23 1985-01-01 International Business Machines Corporation Positive- and negative-working resist compositions with acid generating photoinitiator and polymer with acid labile groups pendant from polymer backbone
US4564575A (en) * 1984-01-30 1986-01-14 International Business Machines Corporation Tailoring of novolak and diazoquinone positive resists by acylation of novolak
DE3582697D1 (de) * 1984-06-07 1991-06-06 Hoechst Ag Positiv arbeitende strahlungsempfindliche beschichtungsloesung.
DE3445276A1 (de) * 1984-12-12 1986-06-19 Hoechst Ag, 6230 Frankfurt Strahlungsempfindliches gemisch, daraus hergestelltes lichtempfindliches aufzeichnungsmaterial und verfahren zur herstellung einer flachdruckform
US4897336A (en) * 1986-04-11 1990-01-30 Chien James C W Self-developing radiation sensitive resist with amorphous polymer having haloalkyl substitution derived from cycic ether
DE3621376A1 (de) * 1986-06-26 1988-01-07 Hoechst Ag Strahlungsempfindliches aufzeichnungsmaterial
DE3628720A1 (de) * 1986-08-23 1988-02-25 Hoechst Ag Vorsensibilisierte druckplatte und verfahren zur herstellung einer druckform fuer den wasserlosen flachdruck
DE3635303A1 (de) 1986-10-17 1988-04-28 Hoechst Ag Verfahren zur abtragenden modifizierung von mehrstufig aufgerauhten traegermaterialien aus aluminium oder dessen legierungen und deren verwendung bei der herstellung von offsetdruckplatten
JPS63265242A (ja) * 1987-04-23 1988-11-01 Fuji Photo Film Co Ltd 多色画像形成方法
DE3715790A1 (de) * 1987-05-12 1988-11-24 Hoechst Ag Strahlungsempfindliches aufzeichnungsmaterial
DE3716848A1 (de) * 1987-05-20 1988-12-01 Hoechst Ag Verfahren zur bebilderung lichtempfindlichen materials
DE3725741A1 (de) * 1987-08-04 1989-02-16 Hoechst Ag Positiv arbeitendes strahlungsempfindliches gemisch
DE3725949A1 (de) * 1987-08-05 1989-02-16 Hoechst Ag Lichtempfindliches gemisch, daraus hergestelltes lichtempfindliches kopiermaterial und verfahren zur herstellung von negativen reliefkopien
DE3730783A1 (de) * 1987-09-13 1989-03-23 Hoechst Ag Positiv arbeitendes strahlungsempfindliches gemisch und daraus hergestelltes strahlungsempfindliches aufzeichnungsmaterial
DE3730787A1 (de) * 1987-09-13 1989-03-23 Hoechst Ag Positiv arbeitendes strahlungsempfindliches gemisch und daraus hergestelltes strahlungsempfindliches aufzeichnungsmaterial
DE3821585A1 (de) * 1987-09-13 1989-03-23 Hoechst Ag Positiv arbeitendes strahlungsempfindliches gemisch und daraus hergestelltes strahlungsempfindliches aufzeichnungsmaterial fuer hochenergetische strahlung
DE3730785A1 (de) * 1987-09-13 1989-03-23 Hoechst Ag Positiv arbeitendes strahlungsempfindliches gemisch und daraus hergestelltes strahlungsempfindliches aufzeichnungsmaterial
DE3737734A1 (de) * 1987-11-06 1989-05-18 Hoechst Ag Strahlungsempfindliches gemisch
DE3810631A1 (de) * 1988-03-29 1989-10-12 Hoechst Ag Positiv arbeitendes lichtempfindliches gemisch und daraus hergestelltes aufzeichnungsmaterial mit hohem waermestand
EP0347381B1 (de) * 1988-06-13 1992-02-12 Ciba-Geigy Ag Ungesättigte beta-Ketoesteracetale und ihre Anwendungen
DE3820699A1 (de) * 1988-06-18 1989-12-21 Hoechst Ag Strahlungsempfindliches gemisch und hieraus hergestelltes strahlungsempfindliches aufzeichnungsmaterial
DE3821584A1 (de) * 1988-06-25 1989-12-28 Hoechst Ag Strahlungshaertbares gemisch und daraus hergestelltes strahlungsempfindliches aufzeichungsmaterial fuer hochenergetische strahlung
DE3827901A1 (de) * 1988-08-17 1990-02-22 Hoechst Ag Positiv arbeitendes strahlungsempfindliches gemisch und hiermit hergestelltes strahlungsempfindliches aufzeichnungsmaterial
DE3837438A1 (de) * 1988-11-04 1990-05-10 Basf Ag Strahlungsempfindliches gemisch
DE3837513A1 (de) * 1988-11-04 1990-05-10 Basf Ag Strahlungsempfindliches gemisch
DE3907953A1 (de) * 1989-03-11 1990-09-13 Hoechst Ag Strahlungshaertbares gemisch und daraus hergestelltes strahlungsempfindliches aufzeichnungsmaterial fuer hochenergetische strahlung
DE3907954A1 (de) * 1989-03-11 1990-09-13 Hoechst Ag Positiv arbeitendes strahlungsempfindliches gemisch und daraus hergestelltes strahlungsempfindliches aufzeichnungsmaterial fuer hochenergetische strahlung
US5220037A (en) * 1989-07-22 1993-06-15 Basf Aktiengesellschaft Sulfonium salts and use thereof
DE3930087A1 (de) * 1989-09-09 1991-03-14 Hoechst Ag Positiv arbeitendes strahlungsempfindliches gemisch und daraus hergestelltes strahlungsempfindliches aufzeichnungsmaterial
DE3930086A1 (de) * 1989-09-09 1991-03-21 Hoechst Ag Positiv arbeitendes strahlungsempfindliches gemisch und daraus hergestelltes strahlungsempfindliches aufzeichnungsmaterial
DE3940911A1 (de) * 1989-12-12 1991-06-13 Hoechst Ag Verfahren zur herstellung negativer kopien
DE4002397A1 (de) * 1990-01-27 1991-08-01 Hoechst Ag Strahlungsempfindliches gemisch und hieraus hergestelltes strahlungsempfindliches aufzeichnungsmaterial
DE4003025A1 (de) * 1990-02-02 1991-08-08 Hoechst Ag Strahlungsempfindliches gemisch, hiermit hergestelltes strahlungsempfindliches aufzeichnungsmaterial und verfahren zur herstellung von reliefaufzeichnungen
US5164278A (en) * 1990-03-01 1992-11-17 International Business Machines Corporation Speed enhancers for acid sensitized resists
DE4110057A1 (de) * 1991-03-27 1992-10-01 Hoechst Ag Verfahren zur herstellung eines mehrfarben-pruefbildes und hierfuer geeignetes strahlungsempfindliches aufzeichnungsmaterial
DE4214363C2 (de) * 1991-04-30 1998-01-29 Toshiba Kawasaki Kk Strahlungsempfindliches Gemisch zur Ausbildung von Mustern
US5342734A (en) * 1992-02-25 1994-08-30 Morton International, Inc. Deep UV sensitive photoresist resistant to latent image decay
US6667387B1 (en) 1996-09-30 2003-12-23 N.V. Innogenetics S.A. HCV core peptides
DE4242050A1 (de) * 1992-12-14 1994-06-16 Hoechst Ag Polymere mit N,N-disubstituierten Sulfonamid-Seitengruppen und deren Verwendung
DE4242051A1 (de) * 1992-12-14 1994-06-16 Hoechst Ag N,N-Disubstituierte Sulfonamide und damit hergestelltes strahlungsempfindliches Gemisch
US5314782A (en) * 1993-03-05 1994-05-24 Morton International, Inc. Deep UV sensitive resistant to latent image decay comprising a diazonaphthoquinone sulfonate of a nitrobenzyl derivative
EP0620500A3 (en) * 1993-04-16 1996-01-03 Hitachi Ltd Reserve and method for obtaining structures with this reserve.
GB9326150D0 (en) * 1993-12-22 1994-02-23 Alcan Int Ltd Electrochemical roughening method
DE4414896A1 (de) * 1994-04-28 1995-11-02 Hoechst Ag Positiv arbeitendes strahlungempfindliches Gemisch
DE4444669A1 (de) * 1994-12-15 1996-06-20 Hoechst Ag Strahlungsempfindliches Gemisch
US6060222A (en) 1996-11-19 2000-05-09 Kodak Polcyhrome Graphics Llc 1Postitve-working imaging composition and element and method of forming positive image with a laser
DE19803564A1 (de) 1998-01-30 1999-08-05 Agfa Gevaert Ag Polymere mit Einheiten aus N-substituiertem Maleimid und deren Verwendung in strahlungsempfindlichen Gemischen
KR100314761B1 (ko) 1999-03-03 2001-11-17 윤덕용 노르보르넨에 콜릭산, 디옥시콜릭산 또는 리소콜릭산 유도체를 결합시킨 단량체를 이용한 중합체 및 이를 함유하는 포토레지스트 조성물
KR100749494B1 (ko) 2001-04-03 2007-08-14 삼성에스디아이 주식회사 화학증폭형 네가티브 포토레지스트용 중합체 및 포토레지스트 조성물
JP4153912B2 (ja) * 2002-10-23 2008-09-24 Ａｚエレクトロニックマテリアルズ株式会社 化学増幅ポジ型感光性樹脂組成物
US7740699B2 (en) * 2006-10-05 2010-06-22 E.I. Du Pont De Nemours And Company Orthoformate-protected polyols

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH621416A5 (ja) * 1975-03-27 1981-01-30 Hoechst Ag
US4066747A (en) * 1976-04-08 1978-01-03 Alza Corporation Polymeric orthoesters housing beneficial drug for controlled release therefrom
DE2718254C3 (de) * 1977-04-25 1980-04-10 Hoechst Ag, 6000 Frankfurt Strahlungsempfindliche Kopiermasse

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6246520A (ja) * 1985-08-23 1987-02-28 Mitsubishi Electric Corp 露光装置
JPS6310153A (ja) * 1986-07-02 1988-01-16 Konica Corp 感光性組成物および感光性平版印刷版
EP0410606A2 (en) 1989-07-12 1991-01-30 Fuji Photo Film Co., Ltd. Siloxane polymers and positive working light-sensitive compositions comprising the same
EP0565006A2 (en) 1992-04-06 1993-10-13 Fuji Photo Film Co., Ltd. Method for preparing PS plate
US6010826A (en) * 1994-10-13 2000-01-04 Nippon Zeon Co., Ltd. Resist composition
EP0747768A2 (en) 1995-06-05 1996-12-11 Fuji Photo Film Co., Ltd. Chemically amplified positive resist composition
US6309795B1 (en) 1996-01-26 2001-10-30 Nippon Zeon Co., Ltd. Resist composition
EP0788031A1 (en) 1996-02-05 1997-08-06 Fuji Photo Film Co., Ltd. Positive working photosensitive composition
JP2000347411A (ja) * 1999-06-08 2000-12-15 Matsushita Electric Ind Co Ltd パターン形成材料およびパターン形成方法
US6410204B1 (en) 1999-09-27 2002-06-25 Fuji Photo Film Co., Ltd. Positive photoresist composition
US6828078B2 (en) 2000-08-29 2004-12-07 Jsr Corporation Composition having refractive index sensitively changeable by radiation and method for forming refractive index pattern
US7108954B2 (en) 2000-12-11 2006-09-19 Jsr Corporation Radiation-sensitive composition changing in refractive index and method of changing refractive index
US7071255B2 (en) 2001-02-19 2006-07-04 Jsr Corporation Radiation-sensitive composition capable of having refractive index distribution
US7125647B2 (en) 2001-03-13 2006-10-24 Jsr Corporation Radiation-sensitive composition changing in refractive index and utilization thereof
EP1627736A1 (en) 2004-08-18 2006-02-22 Konica Minolta Medical & Graphic, Inc. Method of manufacturing light sensitive planographic printing plates and method of using the same

Also Published As

Publication number Publication date
JPS6320325B2 (ja) 1988-04-27
US4311782A (en) 1982-01-19
BR8004395A (pt) 1981-01-27
ZA804267B (en) 1981-07-29
EP0022571B1 (de) 1982-12-22
DE3061426D1 (en) 1983-01-27
EP0022571A1 (de) 1981-01-21
CA1133743A (en) 1982-10-19
AU6015280A (en) 1981-01-22
DE2928636A1 (de) 1981-02-12
ATE2099T1 (de) 1983-01-15
AU533172B2 (en) 1983-11-03

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