JPS56169333A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS56169333A
JPS56169333A JP7203580A JP7203580A JPS56169333A JP S56169333 A JPS56169333 A JP S56169333A JP 7203580 A JP7203580 A JP 7203580A JP 7203580 A JP7203580 A JP 7203580A JP S56169333 A JPS56169333 A JP S56169333A
Authority
JP
Japan
Prior art keywords
semiconductor device
sin film
reaction gas
film
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7203580A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6234139B2 (enExample
Inventor
Kanetake Takasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP7203580A priority Critical patent/JPS56169333A/ja
Publication of JPS56169333A publication Critical patent/JPS56169333A/ja
Publication of JPS6234139B2 publication Critical patent/JPS6234139B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P14/69433—

Landscapes

  • Formation Of Insulating Films (AREA)
JP7203580A 1980-05-29 1980-05-29 Semiconductor device Granted JPS56169333A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7203580A JPS56169333A (en) 1980-05-29 1980-05-29 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7203580A JPS56169333A (en) 1980-05-29 1980-05-29 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS56169333A true JPS56169333A (en) 1981-12-26
JPS6234139B2 JPS6234139B2 (enExample) 1987-07-24

Family

ID=13477741

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7203580A Granted JPS56169333A (en) 1980-05-29 1980-05-29 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS56169333A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7361611B2 (en) 2004-06-29 2008-04-22 International Business Machines Corporation Doped nitride film, doped oxide film and other doped films

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH021468U (enExample) * 1988-06-15 1990-01-08
JPH0224071U (enExample) * 1988-08-04 1990-02-16

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7361611B2 (en) 2004-06-29 2008-04-22 International Business Machines Corporation Doped nitride film, doped oxide film and other doped films
CN100428424C (zh) * 2004-06-29 2008-10-22 国际商业机器公司 掺杂的氮化物膜、掺杂的氧化物膜、以及其它掺杂的膜
US7595010B2 (en) 2004-06-29 2009-09-29 International Business Machines Corporation Method for producing a doped nitride film, doped oxide film and other doped films

Also Published As

Publication number Publication date
JPS6234139B2 (enExample) 1987-07-24

Similar Documents

Publication Publication Date Title
US4430547A (en) Cleaning device for a plasma etching system
JPS56158873A (en) Dry etching method
EP0878823A3 (en) Plasma-enhanced chemical vapor deposition apparatus and method M
KR970700370A (ko) 박막형성법
GB994911A (en) Improvements in or relating to sputtering apparatus
JPS56169333A (en) Semiconductor device
JPS56105480A (en) Plasma etching method
JPS5647572A (en) Etching method of indium oxide film
JPS6477120A (en) Formation of wiring of semiconductor device
JPH0324272A (ja) 誘電体フィルム付着装置
JPS5559727A (en) Plasma deposition device
JPS55101853A (en) Method of fabricating comparison electrode with fet
JPS57153436A (en) Semiconductor device
JPS5471577A (en) Production of semiconductor device
JPS5743426A (en) Plasma treating apparatus
JPS57134553A (en) Chemical vapor phase growing method
JPS5469964A (en) Production of semiconductor device
JPS56169116A (en) Manufacture of amorphous silicon film
JPS5732637A (en) Dry etching apparatus
JPS5687671A (en) Dry etching apparatus
JPS556410A (en) Plasma gas phase reactor
JPS5477573A (en) Operating method of plasma treating apparatus
JPS57184224A (en) Microwave plasma treating method and its device
JPS52122284A (en) Sputtering device having bias electrode
JPS5587439A (en) Manufacture of semiconductor device