JPS56169328A - Formation of electrode for semiconductor - Google Patents
Formation of electrode for semiconductorInfo
- Publication number
- JPS56169328A JPS56169328A JP7258580A JP7258580A JPS56169328A JP S56169328 A JPS56169328 A JP S56169328A JP 7258580 A JP7258580 A JP 7258580A JP 7258580 A JP7258580 A JP 7258580A JP S56169328 A JPS56169328 A JP S56169328A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- cds
- cds2
- sintered layer
- nh4cl
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 230000015572 biosynthetic process Effects 0.000 title 1
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical compound [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 abstract 2
- 235000019270 ammonium chloride Nutrition 0.000 abstract 2
- 238000005245 sintering Methods 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 230000004913 activation Effects 0.000 abstract 1
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 abstract 1
- 239000000919 ceramic Substances 0.000 abstract 1
- 239000003795 chemical substances by application Substances 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000011812 mixed powder Substances 0.000 abstract 1
- 230000001590 oxidative effect Effects 0.000 abstract 1
- 239000000843 powder Substances 0.000 abstract 1
- 239000002904 solvent Substances 0.000 abstract 1
- 239000012808 vapor phase Substances 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Photovoltaic Devices (AREA)
- Light Receiving Elements (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7258580A JPS56169328A (en) | 1980-05-30 | 1980-05-30 | Formation of electrode for semiconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7258580A JPS56169328A (en) | 1980-05-30 | 1980-05-30 | Formation of electrode for semiconductor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS56169328A true JPS56169328A (en) | 1981-12-26 |
| JPS6349393B2 JPS6349393B2 (enrdf_load_stackoverflow) | 1988-10-04 |
Family
ID=13493596
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7258580A Granted JPS56169328A (en) | 1980-05-30 | 1980-05-30 | Formation of electrode for semiconductor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56169328A (enrdf_load_stackoverflow) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61211918A (ja) * | 1985-03-15 | 1986-09-20 | 日本電気株式会社 | 座標式メニユ−キ−ボ−ド |
| JP2010027444A (ja) * | 2008-07-22 | 2010-02-04 | Fuji Electric Retail Systems Co Ltd | 押ボタン式キーボードスイッチ |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02134889U (enrdf_load_stackoverflow) * | 1989-04-04 | 1990-11-08 |
-
1980
- 1980-05-30 JP JP7258580A patent/JPS56169328A/ja active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61211918A (ja) * | 1985-03-15 | 1986-09-20 | 日本電気株式会社 | 座標式メニユ−キ−ボ−ド |
| JP2010027444A (ja) * | 2008-07-22 | 2010-02-04 | Fuji Electric Retail Systems Co Ltd | 押ボタン式キーボードスイッチ |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6349393B2 (enrdf_load_stackoverflow) | 1988-10-04 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE3777995D1 (de) | Verfahren zur befestigung von elektronischen bauelementen auf einem substrat, folie zur durchfuehrung des verfahrens und verfahren zur herstellung der folie. | |
| AU580002B2 (en) | Preparation and use of electrodes | |
| JPS56169328A (en) | Formation of electrode for semiconductor | |
| HK69984A (en) | Thick film resistor circuits | |
| JPS52120782A (en) | Manufacture of semiconductor device | |
| JPS57155386A (en) | Preventing method for oxidation of copper powder | |
| JPS5577164A (en) | Semiconductor device | |
| JPS5240962A (en) | Fluorescent tube | |
| JPS5211752A (en) | Method of manufacturing cathodes for electron tubes | |
| JPS55158549A (en) | Production of sensor | |
| JPS5670448A (en) | Oxygen sensor | |
| JPS5676543A (en) | Semiconductor element | |
| JPS5555579A (en) | Semiconductor device and method of fabricating the same | |
| JPS642075A (en) | Production of solid discharge device | |
| JPS539489A (en) | Production of semiconductor device | |
| JPS56123879A (en) | Thick film circuit substrate | |
| JPS5529283A (en) | Dc motor | |
| JPS55127062A (en) | Semiconductor device | |
| JPS52153497A (en) | Production of gas sensitive element | |
| JPS5353259A (en) | Semiconductor device | |
| JPS57206060A (en) | Manufacturing method for semiconductor device | |
| JPS54157799A (en) | Production of silicon nitride layer | |
| JPS53141579A (en) | Manufacture of semiconductor device | |
| JPS5472969A (en) | Manufacture of semiconductor element | |
| JPS5582297A (en) | Production of heating surface |