JPS54157799A - Production of silicon nitride layer - Google Patents

Production of silicon nitride layer

Info

Publication number
JPS54157799A
JPS54157799A JP6637678A JP6637678A JPS54157799A JP S54157799 A JPS54157799 A JP S54157799A JP 6637678 A JP6637678 A JP 6637678A JP 6637678 A JP6637678 A JP 6637678A JP S54157799 A JPS54157799 A JP S54157799A
Authority
JP
Japan
Prior art keywords
substrate
silicon nitride
silicon
layer
dried
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6637678A
Other languages
Japanese (ja)
Inventor
Shigetoshi Takayanagi
Takashi Hirao
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP6637678A priority Critical patent/JPS54157799A/en
Publication of JPS54157799A publication Critical patent/JPS54157799A/en
Pending legal-status Critical Current

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Abstract

PURPOSE: Silicon plate substrate having electrochemically anodized porous silicon surface is heat treated in a gas atomosphere containing N2, thereby to uniformly produce thick silicon nitride layer in integrated structure with silicon substrate.
CONSTITUTION: A p type, 1 to 3 ohm-cm <100>Si substrate 1 is placed in 49% HF solution with its one side faced to platinum cathode 2 and the other side coated with insulating material 3. The substrate 1 is made positive and anodized at current density of 10 to 50 mA/cm2 to form porous layer 4 of about 1 μm on the substrate surface 1. The substrate 1 is, then, degreased and cleaned with aceton in N2 atomosphere, followed by cleaning with dilute HF solution and dried. The dried substrate 1 is placed in nitrizing furnace and nitrized by purified N2 gas with H2O, O2, etc. content reduced below 1 ppm, at 1150°C for more than 20 minutes thereby to convert the porous layer 4 into a layer 5 essentially consisting of silicon nitride.
COPYRIGHT: (C)1979,JPO&Japio
JP6637678A 1978-06-01 1978-06-01 Production of silicon nitride layer Pending JPS54157799A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6637678A JPS54157799A (en) 1978-06-01 1978-06-01 Production of silicon nitride layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6637678A JPS54157799A (en) 1978-06-01 1978-06-01 Production of silicon nitride layer

Publications (1)

Publication Number Publication Date
JPS54157799A true JPS54157799A (en) 1979-12-12

Family

ID=13314037

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6637678A Pending JPS54157799A (en) 1978-06-01 1978-06-01 Production of silicon nitride layer

Country Status (1)

Country Link
JP (1) JPS54157799A (en)

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