JPS54157799A - Production of silicon nitride layer - Google Patents
Production of silicon nitride layerInfo
- Publication number
- JPS54157799A JPS54157799A JP6637678A JP6637678A JPS54157799A JP S54157799 A JPS54157799 A JP S54157799A JP 6637678 A JP6637678 A JP 6637678A JP 6637678 A JP6637678 A JP 6637678A JP S54157799 A JPS54157799 A JP S54157799A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- silicon nitride
- silicon
- layer
- dried
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Bipolar Transistors (AREA)
Abstract
PURPOSE: Silicon plate substrate having electrochemically anodized porous silicon surface is heat treated in a gas atomosphere containing N2, thereby to uniformly produce thick silicon nitride layer in integrated structure with silicon substrate.
CONSTITUTION: A p type, 1 to 3 ohm-cm <100>Si substrate 1 is placed in 49% HF solution with its one side faced to platinum cathode 2 and the other side coated with insulating material 3. The substrate 1 is made positive and anodized at current density of 10 to 50 mA/cm2 to form porous layer 4 of about 1 μm on the substrate surface 1. The substrate 1 is, then, degreased and cleaned with aceton in N2 atomosphere, followed by cleaning with dilute HF solution and dried. The dried substrate 1 is placed in nitrizing furnace and nitrized by purified N2 gas with H2O, O2, etc. content reduced below 1 ppm, at 1150°C for more than 20 minutes thereby to convert the porous layer 4 into a layer 5 essentially consisting of silicon nitride.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6637678A JPS54157799A (en) | 1978-06-01 | 1978-06-01 | Production of silicon nitride layer |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6637678A JPS54157799A (en) | 1978-06-01 | 1978-06-01 | Production of silicon nitride layer |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS54157799A true JPS54157799A (en) | 1979-12-12 |
Family
ID=13314037
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6637678A Pending JPS54157799A (en) | 1978-06-01 | 1978-06-01 | Production of silicon nitride layer |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54157799A (en) |
-
1978
- 1978-06-01 JP JP6637678A patent/JPS54157799A/en active Pending
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