JPS56165327A - Method and apparatus for monitoring plasma etching - Google Patents

Method and apparatus for monitoring plasma etching

Info

Publication number
JPS56165327A
JPS56165327A JP6896080A JP6896080A JPS56165327A JP S56165327 A JPS56165327 A JP S56165327A JP 6896080 A JP6896080 A JP 6896080A JP 6896080 A JP6896080 A JP 6896080A JP S56165327 A JPS56165327 A JP S56165327A
Authority
JP
Japan
Prior art keywords
high frequency
etching
gas
frequency power
etching process
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6896080A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0261140B2 (enExample
Inventor
Yoshimichi Hirobe
Hiromitsu Enami
Yoshinori Kureishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP6896080A priority Critical patent/JPS56165327A/ja
Publication of JPS56165327A publication Critical patent/JPS56165327A/ja
Publication of JPH0261140B2 publication Critical patent/JPH0261140B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices

Landscapes

  • Drying Of Semiconductors (AREA)
JP6896080A 1980-05-26 1980-05-26 Method and apparatus for monitoring plasma etching Granted JPS56165327A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6896080A JPS56165327A (en) 1980-05-26 1980-05-26 Method and apparatus for monitoring plasma etching

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6896080A JPS56165327A (en) 1980-05-26 1980-05-26 Method and apparatus for monitoring plasma etching

Publications (2)

Publication Number Publication Date
JPS56165327A true JPS56165327A (en) 1981-12-18
JPH0261140B2 JPH0261140B2 (enExample) 1990-12-19

Family

ID=13388744

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6896080A Granted JPS56165327A (en) 1980-05-26 1980-05-26 Method and apparatus for monitoring plasma etching

Country Status (1)

Country Link
JP (1) JPS56165327A (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58140126A (ja) * 1982-02-16 1983-08-19 Matsushita Electric Ind Co Ltd ドライエツチング方法
US5284547A (en) * 1991-01-22 1994-02-08 Tokyo Electron Limited Plasma-process system with batch scheme
US5352902A (en) * 1992-07-06 1994-10-04 Tokyo Electron Kabushiki Kaisha Method for controlling plasma surface-treatments with a plurality of photodetectors and optical filters
JP2009013470A (ja) * 2007-07-05 2009-01-22 Ulvac Japan Ltd 薄膜形成方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58140126A (ja) * 1982-02-16 1983-08-19 Matsushita Electric Ind Co Ltd ドライエツチング方法
US5284547A (en) * 1991-01-22 1994-02-08 Tokyo Electron Limited Plasma-process system with batch scheme
US5352902A (en) * 1992-07-06 1994-10-04 Tokyo Electron Kabushiki Kaisha Method for controlling plasma surface-treatments with a plurality of photodetectors and optical filters
JP2009013470A (ja) * 2007-07-05 2009-01-22 Ulvac Japan Ltd 薄膜形成方法

Also Published As

Publication number Publication date
JPH0261140B2 (enExample) 1990-12-19

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