JPS56164582A - Semiconductor piezo-electric element and manufacture thereof - Google Patents
Semiconductor piezo-electric element and manufacture thereofInfo
- Publication number
- JPS56164582A JPS56164582A JP6781480A JP6781480A JPS56164582A JP S56164582 A JPS56164582 A JP S56164582A JP 6781480 A JP6781480 A JP 6781480A JP 6781480 A JP6781480 A JP 6781480A JP S56164582 A JPS56164582 A JP S56164582A
- Authority
- JP
- Japan
- Prior art keywords
- sio2 film
- substrate
- film
- thickness
- aperture
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 12
- 239000010408 film Substances 0.000 abstract 7
- 229910052681 coesite Inorganic materials 0.000 abstract 6
- 229910052906 cristobalite Inorganic materials 0.000 abstract 6
- 239000000377 silicon dioxide Substances 0.000 abstract 6
- 235000012239 silicon dioxide Nutrition 0.000 abstract 6
- 229910052682 stishovite Inorganic materials 0.000 abstract 6
- 229910052905 tridymite Inorganic materials 0.000 abstract 6
- 239000000758 substrate Substances 0.000 abstract 4
- 238000005530 etching Methods 0.000 abstract 2
- 239000010409 thin film Substances 0.000 abstract 2
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- 238000005229 chemical vapour deposition Methods 0.000 abstract 1
- 239000013078 crystal Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 238000000059 patterning Methods 0.000 abstract 1
- 239000011347 resin Substances 0.000 abstract 1
- 229920005989 resin Polymers 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/84—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Pressure Sensors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6781480A JPS56164582A (en) | 1980-05-23 | 1980-05-23 | Semiconductor piezo-electric element and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6781480A JPS56164582A (en) | 1980-05-23 | 1980-05-23 | Semiconductor piezo-electric element and manufacture thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS56164582A true JPS56164582A (en) | 1981-12-17 |
Family
ID=13355782
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6781480A Pending JPS56164582A (en) | 1980-05-23 | 1980-05-23 | Semiconductor piezo-electric element and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56164582A (ja) |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60157264A (ja) * | 1984-01-26 | 1985-08-17 | Sumitomo Electric Ind Ltd | 歪センサ |
| JPH0476959A (ja) * | 1990-07-19 | 1992-03-11 | Mitsubishi Electric Corp | 半導体圧力センサの製造方法 |
| JPH0476956A (ja) * | 1990-07-19 | 1992-03-11 | Mitsubishi Electric Corp | 半導体加速度センサの製造方法 |
| US5302933A (en) * | 1991-09-27 | 1994-04-12 | Terumo Kabushiki Kaisha | Infrared sensor |
| US5336918A (en) * | 1992-09-09 | 1994-08-09 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor pressure sensor and method of fabricating the same |
| US5382823A (en) * | 1990-11-27 | 1995-01-17 | Terumo Kabushiki Kaisha | Semiconductor device and method for production thereof |
| US5404125A (en) * | 1991-07-19 | 1995-04-04 | Terumo Kabushiki Kaisha | Infrared radiation sensor |
| US5804462A (en) * | 1995-11-30 | 1998-09-08 | Motorola, Inc. | Method for forming a multiple-sensor semiconductor chip |
| JP2000277754A (ja) * | 1999-03-29 | 2000-10-06 | Asahi Kasei Denshi Kk | 半導体加速度センサ |
| US6345424B1 (en) * | 1992-04-23 | 2002-02-12 | Seiko Epson Corporation | Production method for forming liquid spray head |
-
1980
- 1980-05-23 JP JP6781480A patent/JPS56164582A/ja active Pending
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60157264A (ja) * | 1984-01-26 | 1985-08-17 | Sumitomo Electric Ind Ltd | 歪センサ |
| JPH0586676B2 (ja) * | 1984-01-26 | 1993-12-13 | Sumitomo Electric Industries | |
| JPH0476959A (ja) * | 1990-07-19 | 1992-03-11 | Mitsubishi Electric Corp | 半導体圧力センサの製造方法 |
| JPH0476956A (ja) * | 1990-07-19 | 1992-03-11 | Mitsubishi Electric Corp | 半導体加速度センサの製造方法 |
| US5382823A (en) * | 1990-11-27 | 1995-01-17 | Terumo Kabushiki Kaisha | Semiconductor device and method for production thereof |
| US5404125A (en) * | 1991-07-19 | 1995-04-04 | Terumo Kabushiki Kaisha | Infrared radiation sensor |
| US5302933A (en) * | 1991-09-27 | 1994-04-12 | Terumo Kabushiki Kaisha | Infrared sensor |
| US6345424B1 (en) * | 1992-04-23 | 2002-02-12 | Seiko Epson Corporation | Production method for forming liquid spray head |
| US5336918A (en) * | 1992-09-09 | 1994-08-09 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor pressure sensor and method of fabricating the same |
| US5804462A (en) * | 1995-11-30 | 1998-09-08 | Motorola, Inc. | Method for forming a multiple-sensor semiconductor chip |
| JP2000277754A (ja) * | 1999-03-29 | 2000-10-06 | Asahi Kasei Denshi Kk | 半導体加速度センサ |
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