JPS574501A - Monitoring device - Google Patents

Monitoring device

Info

Publication number
JPS574501A
JPS574501A JP7926280A JP7926280A JPS574501A JP S574501 A JPS574501 A JP S574501A JP 7926280 A JP7926280 A JP 7926280A JP 7926280 A JP7926280 A JP 7926280A JP S574501 A JPS574501 A JP S574501A
Authority
JP
Japan
Prior art keywords
vacuum
temperature
evaporated
sensitive element
electrodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7926280A
Other languages
Japanese (ja)
Inventor
Kikuo Koga
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Jeol Ltd
Original Assignee
Jeol Ltd
Nihon Denshi KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jeol Ltd, Nihon Denshi KK filed Critical Jeol Ltd
Priority to JP7926280A priority Critical patent/JPS574501A/en
Publication of JPS574501A publication Critical patent/JPS574501A/en
Pending legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54Controlling or regulating the coating process
    • C23C14/542Controlling the film thickness or evaporation rate
    • C23C14/545Controlling the film thickness or evaporation rate using measurement on deposited material

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)

Abstract

PURPOSE:To enable the correct measurement of a film thickness through the elimination of the influence exercised by a change in temperature, by a method wherein a temperature-sensitive element is placed on a monitoring substrate with a temperature being approximately equal to that of a film, and the temperature of the film is measured directly. CONSTITUTION:A temperature-sensitive element 3, such as thermocouples, thermisters, etc., is previously adhered to an insulating substrate 1, such as ceramic, glass, etc., between electrode films 2a and 2b by vacuum-evaporation, sintering and other means, and an evaporating material 4 is vacuum-evaporated between electrodes 2a and 2b. In case the temperature-sensitive element is vacuum-evaporated to between the electrodes 2a and 2b, and the evaporating material 4 is vacuum-evaporated to between the electrodes 2c and 2d, the vacuum-evaporation takes place by using a mask 6 having a slot 5, which has the same shape and size as those of the vacuum- evaporated part, so that the temperature-sensitive element or the vacuum-evaporating material is prevented from being vacuum-evaporated at a part except their respective vacuum-evaporated part. This permits the measurement of a film thickness with almost no error.
JP7926280A 1980-06-12 1980-06-12 Monitoring device Pending JPS574501A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7926280A JPS574501A (en) 1980-06-12 1980-06-12 Monitoring device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7926280A JPS574501A (en) 1980-06-12 1980-06-12 Monitoring device

Publications (1)

Publication Number Publication Date
JPS574501A true JPS574501A (en) 1982-01-11

Family

ID=13684935

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7926280A Pending JPS574501A (en) 1980-06-12 1980-06-12 Monitoring device

Country Status (1)

Country Link
JP (1) JPS574501A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS604805A (en) * 1983-06-23 1985-01-11 Sunstar Giken Kk Thickness measuring device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS604805A (en) * 1983-06-23 1985-01-11 Sunstar Giken Kk Thickness measuring device
JPH0230645B2 (en) * 1983-06-23 1990-07-09 Sunstar Engineering Inc

Similar Documents

Publication Publication Date Title
JPS52104256A (en) Thickness measuring device
JPS574501A (en) Monitoring device
JPS56164582A (en) Semiconductor piezo-electric element and manufacture thereof
FR2283618A1 (en) Electric heating device for liquid tank - has conductive film heating element between two insulating sheets
JPS5322385A (en) Diffusion type semiconductor pr essure receiving element
JPS5376019A (en) Manufacture of photographic light sensitive material
JPS5522122A (en) Humidity measuring element
JPS546879A (en) Manufacturing apparatus for thin film of ii-vi group compounds
JPS5657946A (en) Humidity-sensitive element
JPS5536921A (en) Pressure sensitive element
JPS51130191A (en) Driving method for a liquid crystal
JPS5232671A (en) Manufacturing process of semiconductor device
JPS5228377A (en) Temperature distribution measuring device
JPS5768080A (en) Semiconductor pressure sensitive device
JPS57205173A (en) Temperature detector for heat sensitive head
DE3167758D1 (en) Method for the manufacture of a temperature sensitive platinum thin film resistance element
JPS51147292A (en) Semiconductor hall effect element and its manufacturing process
JPS5374294A (en) Production method of thin film resistor
JPS5330274A (en) Semiconductor device
JPS51114171A (en) A revolution indicator
JPS51135941A (en) Adhesive film
JPS56150591A (en) Forming of optical record member
JPS51140793A (en) Applied device for gas-induced element
JPS5262679A (en) Semiconductor thermistor
JPS5377993A (en) Abnormalness monitoring device of thermosensing element in temperature cont roller