JPS56155569A - Reverse conducting power transistor - Google Patents

Reverse conducting power transistor

Info

Publication number
JPS56155569A
JPS56155569A JP5914180A JP5914180A JPS56155569A JP S56155569 A JPS56155569 A JP S56155569A JP 5914180 A JP5914180 A JP 5914180A JP 5914180 A JP5914180 A JP 5914180A JP S56155569 A JPS56155569 A JP S56155569A
Authority
JP
Japan
Prior art keywords
layer
transistor
base
diode
emitter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5914180A
Other languages
Japanese (ja)
Inventor
Ikuo Ohashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP5914180A priority Critical patent/JPS56155569A/en
Publication of JPS56155569A publication Critical patent/JPS56155569A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To prevent the destruction of a transistor for sudden forward voltage application after conducting a diode by separating the base and emitter of a transistor from a reverse conductive diode section. CONSTITUTION:An N<+> layer 1a is selectively formed at the lower side and a diode section P layer 10 and a P type base layer 2 at the upper side. An N type emitter 3 and an auxiliary emitter layer 4 are selectively made in a base layer 2. Electrode 6, 11, 7 are formed on the layers 3, 10, 2. An electrode 8 is provided by striding over the layers 4 and 2 and by opposing to an electrode 7 and an electrodes 5 is installed on an N<+> layer 1a at the lower side. In this composition, the base and emitter of a transistor are separated from a reverse conductive diode, so residual carriers after conducting the diode will not become the base current of the transistor. Therefore, no collector current will flow even if a sudden forward voltage is applied and the transistor will not be destructed.
JP5914180A 1980-05-02 1980-05-02 Reverse conducting power transistor Pending JPS56155569A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5914180A JPS56155569A (en) 1980-05-02 1980-05-02 Reverse conducting power transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5914180A JPS56155569A (en) 1980-05-02 1980-05-02 Reverse conducting power transistor

Publications (1)

Publication Number Publication Date
JPS56155569A true JPS56155569A (en) 1981-12-01

Family

ID=13104738

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5914180A Pending JPS56155569A (en) 1980-05-02 1980-05-02 Reverse conducting power transistor

Country Status (1)

Country Link
JP (1) JPS56155569A (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5138289U (en) * 1974-09-13 1976-03-22
JPS5140779A (en) * 1974-10-02 1976-04-05 Nippon Electric Co HANDOTA ISOCHI
JPS5227277A (en) * 1975-08-25 1977-03-01 Origin Electric Co Ltd Darlington connction type semiconductor unit

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5138289U (en) * 1974-09-13 1976-03-22
JPS5140779A (en) * 1974-10-02 1976-04-05 Nippon Electric Co HANDOTA ISOCHI
JPS5227277A (en) * 1975-08-25 1977-03-01 Origin Electric Co Ltd Darlington connction type semiconductor unit

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