JPS56147451A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS56147451A JPS56147451A JP5086580A JP5086580A JPS56147451A JP S56147451 A JPS56147451 A JP S56147451A JP 5086580 A JP5086580 A JP 5086580A JP 5086580 A JP5086580 A JP 5086580A JP S56147451 A JPS56147451 A JP S56147451A
- Authority
- JP
- Japan
- Prior art keywords
- si3n4
- constitution
- thick
- reaction
- cracked
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Local Oxidation Of Silicon (AREA)
- Element Separation (AREA)
- Formation Of Insulating Films (AREA)
Abstract
PURPOSE:To obtain an oxidation-resisting mask which is thick, durable and free from crystal defects by piling Si3N4 formed by plasma reaction on Si3N4 formed by thermochemical reaction. CONSTITUTION:The Si3N4 formed from SiH4 and NH3 by thermochemical reaction is readily cracked. Therefore, Si3N4 formed by plasma reaction, which is hardly cracked, is piled thereon. By said constitution, an Si3N4 structure which is thick and hardly cracked can be obtained. In addition, the film thickness automatically decreases at the pattern end of the Si3N4 film, so that thermal stress decreases, and because the stress, which is applied to the Si substrate when it goes it and out a high-temperature oven owing to the thermal expansion coefficient difference, is made small, an SiO2 structure having fewer defects can be selectively formed.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5086580A JPS56147451A (en) | 1980-04-17 | 1980-04-17 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5086580A JPS56147451A (en) | 1980-04-17 | 1980-04-17 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS56147451A true JPS56147451A (en) | 1981-11-16 |
Family
ID=12870611
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5086580A Pending JPS56147451A (en) | 1980-04-17 | 1980-04-17 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS56147451A (en) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6446935A (en) * | 1987-08-17 | 1989-02-21 | Nippon Telegraph & Telephone | Growth method of thin film |
JPH0412528A (en) * | 1990-05-02 | 1992-01-17 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
JPH09326476A (en) * | 1996-05-29 | 1997-12-16 | Taiwan Moshii Denshi Kofun Yugenkoshi | Method for forming memory using spacer of corrugated oxide layer |
JPH10112529A (en) * | 1996-10-03 | 1998-04-28 | Taiwan Moshii Denshi Kofun Yugenkoshi | Manufacture of high density stack dram |
JPH10125870A (en) * | 1996-10-11 | 1998-05-15 | Taiwan Moshii Denshi Kofun Yugenkoshi | Manufacture of stacked dram |
JPH10163448A (en) * | 1996-11-26 | 1998-06-19 | Taiwan Moshii Denshi Kofun Yugenkoshi | Manufacture of case-type capacitor having folds on single side |
US6001697A (en) * | 1998-03-24 | 1999-12-14 | Mosel Vitelic Inc. | Process for manufacturing semiconductor devices having raised doped regions |
-
1980
- 1980-04-17 JP JP5086580A patent/JPS56147451A/en active Pending
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6446935A (en) * | 1987-08-17 | 1989-02-21 | Nippon Telegraph & Telephone | Growth method of thin film |
JPH0412528A (en) * | 1990-05-02 | 1992-01-17 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
JPH09326476A (en) * | 1996-05-29 | 1997-12-16 | Taiwan Moshii Denshi Kofun Yugenkoshi | Method for forming memory using spacer of corrugated oxide layer |
JPH10112529A (en) * | 1996-10-03 | 1998-04-28 | Taiwan Moshii Denshi Kofun Yugenkoshi | Manufacture of high density stack dram |
JPH10125870A (en) * | 1996-10-11 | 1998-05-15 | Taiwan Moshii Denshi Kofun Yugenkoshi | Manufacture of stacked dram |
JPH10163448A (en) * | 1996-11-26 | 1998-06-19 | Taiwan Moshii Denshi Kofun Yugenkoshi | Manufacture of case-type capacitor having folds on single side |
US6001697A (en) * | 1998-03-24 | 1999-12-14 | Mosel Vitelic Inc. | Process for manufacturing semiconductor devices having raised doped regions |
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