JPS56146275A - Insulating gate type field-effect transistor - Google Patents

Insulating gate type field-effect transistor

Info

Publication number
JPS56146275A
JPS56146275A JP2491380A JP2491380A JPS56146275A JP S56146275 A JPS56146275 A JP S56146275A JP 2491380 A JP2491380 A JP 2491380A JP 2491380 A JP2491380 A JP 2491380A JP S56146275 A JPS56146275 A JP S56146275A
Authority
JP
Japan
Prior art keywords
channel region
effect transistor
type field
gate type
insulating gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2491380A
Other languages
English (en)
Japanese (ja)
Other versions
JPS626669B2 (enrdf_load_stackoverflow
Inventor
Masamizu Konaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP2491380A priority Critical patent/JPS56146275A/ja
Publication of JPS56146275A publication Critical patent/JPS56146275A/ja
Publication of JPS626669B2 publication Critical patent/JPS626669B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H10D62/235—Channel regions of field-effect devices of FETs of IGFETs
JP2491380A 1980-02-29 1980-02-29 Insulating gate type field-effect transistor Granted JPS56146275A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2491380A JPS56146275A (en) 1980-02-29 1980-02-29 Insulating gate type field-effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2491380A JPS56146275A (en) 1980-02-29 1980-02-29 Insulating gate type field-effect transistor

Publications (2)

Publication Number Publication Date
JPS56146275A true JPS56146275A (en) 1981-11-13
JPS626669B2 JPS626669B2 (enrdf_load_stackoverflow) 1987-02-12

Family

ID=12151402

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2491380A Granted JPS56146275A (en) 1980-02-29 1980-02-29 Insulating gate type field-effect transistor

Country Status (1)

Country Link
JP (1) JPS56146275A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59107560A (ja) * 1982-12-13 1984-06-21 Hitachi Ltd 半導体集積回路装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59107560A (ja) * 1982-12-13 1984-06-21 Hitachi Ltd 半導体集積回路装置

Also Published As

Publication number Publication date
JPS626669B2 (enrdf_load_stackoverflow) 1987-02-12

Similar Documents

Publication Publication Date Title
JPS5530846A (en) Method for manufacturing fixed memory
JPS5766674A (en) Semiconductor device
JPS56146275A (en) Insulating gate type field-effect transistor
JPS56146276A (en) Insulating gate type field-effect transistor
JPS5731177A (en) Insulated gate type field effect transistor
JPS5585068A (en) Preparation of semiconductor device
JPS5367371A (en) Semiconductor device
JPS5654071A (en) Insulated gate field-effect transistor
JPS56126977A (en) Junction type field effect transistor
JPS5591181A (en) Field effect semiconductor device and manufacture of the same
JPS5437584A (en) Field effect semiconductor device of insulation gate type
JPS53144686A (en) Production of semiconductor device
JPS52144980A (en) Sos semiconductor device
JPS572579A (en) Manufacture of junction type field effect transistor
JPS5364480A (en) Field effect semiconductor device
JPS5372470A (en) Semiconductor device
JPS5286086A (en) Field effect transistor
JPS5669867A (en) Junction type field-effect transistor
JPS57109374A (en) Buried channel type charge transfer device
JPS538080A (en) Insulated gate type field effect transistor
JPS54107679A (en) Semiconductor device
JPS5347781A (en) Production of silicon gate semiconductor device
JPS5425172A (en) Longitudinal junction field effect transistor
JPS5487191A (en) Field effect transistor of isolation silicon gate type
JPS57132361A (en) Charge transfer device