JPS626669B2 - - Google Patents
Info
- Publication number
- JPS626669B2 JPS626669B2 JP55024913A JP2491380A JPS626669B2 JP S626669 B2 JPS626669 B2 JP S626669B2 JP 55024913 A JP55024913 A JP 55024913A JP 2491380 A JP2491380 A JP 2491380A JP S626669 B2 JPS626669 B2 JP S626669B2
- Authority
- JP
- Japan
- Prior art keywords
- drain
- tox
- channel region
- gate
- insulating film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
- H10D62/213—Channel regions of field-effect devices
- H10D62/221—Channel regions of field-effect devices of FETs
- H10D62/235—Channel regions of field-effect devices of FETs of IGFETs
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2491380A JPS56146275A (en) | 1980-02-29 | 1980-02-29 | Insulating gate type field-effect transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2491380A JPS56146275A (en) | 1980-02-29 | 1980-02-29 | Insulating gate type field-effect transistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS56146275A JPS56146275A (en) | 1981-11-13 |
| JPS626669B2 true JPS626669B2 (enrdf_load_stackoverflow) | 1987-02-12 |
Family
ID=12151402
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2491380A Granted JPS56146275A (en) | 1980-02-29 | 1980-02-29 | Insulating gate type field-effect transistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56146275A (enrdf_load_stackoverflow) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59107560A (ja) * | 1982-12-13 | 1984-06-21 | Hitachi Ltd | 半導体集積回路装置 |
-
1980
- 1980-02-29 JP JP2491380A patent/JPS56146275A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS56146275A (en) | 1981-11-13 |
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