JPS56140665A - Nonvolatile memory - Google Patents

Nonvolatile memory

Info

Publication number
JPS56140665A
JPS56140665A JP4387980A JP4387980A JPS56140665A JP S56140665 A JPS56140665 A JP S56140665A JP 4387980 A JP4387980 A JP 4387980A JP 4387980 A JP4387980 A JP 4387980A JP S56140665 A JPS56140665 A JP S56140665A
Authority
JP
Japan
Prior art keywords
offset
poly
oxide film
length
drain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4387980A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0147906B2 (cs
Inventor
Shinji Morozumi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP4387980A priority Critical patent/JPS56140665A/ja
Publication of JPS56140665A publication Critical patent/JPS56140665A/ja
Publication of JPH0147906B2 publication Critical patent/JPH0147906B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/60Insulated-gate field-effect transistors [IGFET]
    • H10D30/69IGFETs having charge trapping gate insulators, e.g. MNOS transistors

Landscapes

  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
JP4387980A 1980-04-03 1980-04-03 Nonvolatile memory Granted JPS56140665A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4387980A JPS56140665A (en) 1980-04-03 1980-04-03 Nonvolatile memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4387980A JPS56140665A (en) 1980-04-03 1980-04-03 Nonvolatile memory

Publications (2)

Publication Number Publication Date
JPS56140665A true JPS56140665A (en) 1981-11-04
JPH0147906B2 JPH0147906B2 (cs) 1989-10-17

Family

ID=12675982

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4387980A Granted JPS56140665A (en) 1980-04-03 1980-04-03 Nonvolatile memory

Country Status (1)

Country Link
JP (1) JPS56140665A (cs)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4960876A (cs) * 1972-10-16 1974-06-13
JPS509388A (cs) * 1973-05-22 1975-01-30

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4960876A (cs) * 1972-10-16 1974-06-13
JPS509388A (cs) * 1973-05-22 1975-01-30

Also Published As

Publication number Publication date
JPH0147906B2 (cs) 1989-10-17

Similar Documents

Publication Publication Date Title
DE69130163D1 (de) Verfahren zur Herstellung einer MOS-EEPROM-Transistorzelle mit schwebendem Gate
JPS5696854A (en) Semiconductor memory device
DE3481667D1 (de) Mos-speicherzelle mit schwimmendem gate und verfahren zu ihrer verfertigung.
JPS5690556A (en) Semiconductor memory storage
JPS645054A (en) Rom memory programming method by mos technology wherein thin gate oxide and junction is used
KR930020733A (ko) 반도체 장치 제조방법
JPS5587490A (en) Non-voratile semiconductor memory device
JPS5791561A (en) Semiconductor non-volatile memory device and manufacture therefor
JPS56140665A (en) Nonvolatile memory
JPS5519820A (en) Semiconductor device
JPS5669866A (en) Semiconductor element
JPS5534443A (en) Preparation of semiconductor memory storage
JPS57130473A (en) Mos type semiconductor memory storage
JPS6433961A (en) Mos composite memory device
JPS6417478A (en) Semiconductor storage cell
JPS57111067A (en) Nonvolatile memory
JPS5784179A (en) Semiconductor memory device
JPS56105666A (en) Semiconductor memory device
JPS57113282A (en) Semiconductor memory device
JPS5678156A (en) Charge pump semiconductor memory
JPS572579A (en) Manufacture of junction type field effect transistor
JPS5536937A (en) Nonvolatile semiconductor storage unit
JPS5791560A (en) Semiconductor non-volatile memory
JPS6480069A (en) Semiconductor storage device and manufacture thereof
JPS57130474A (en) Mos type semiconductor memory storage