JPS5587490A - Non-voratile semiconductor memory device - Google Patents

Non-voratile semiconductor memory device

Info

Publication number
JPS5587490A
JPS5587490A JP16042878A JP16042878A JPS5587490A JP S5587490 A JPS5587490 A JP S5587490A JP 16042878 A JP16042878 A JP 16042878A JP 16042878 A JP16042878 A JP 16042878A JP S5587490 A JPS5587490 A JP S5587490A
Authority
JP
Japan
Prior art keywords
film
charge
gate insulating
si3n4
insulating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16042878A
Other languages
Japanese (ja)
Inventor
Norio Endo
Shigeru Morita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP16042878A priority Critical patent/JPS5587490A/en
Publication of JPS5587490A publication Critical patent/JPS5587490A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)

Abstract

PURPOSE:To improve the memory retaining property with a charge diffusion barrier film in the second gate insulating film for charge storage provided on a gate insulating film presenting a tunnel phenomenon of the charge. CONSTITUTION:An Si4N3 film 51 is piled on an extremely thin SiO2 film 4 and immersed in a specified mixed solution of H2SO4 and H2O2 to form an extremely thin SiO2 film 42. By the same procedure, an SiO2 film 42 serving as charge diffusion barrier in the second gate insulating film comprising Si3N4 films 51-53. With this structure, a relatively large positive voltage is given the gate electrode 6 to trap electrons in the Si3N4 film with implantation of ions from the substrate 1. As the electron diffusion in the Si3N4 film is made between the centers of trapping in the film, the film makes possible tunneling of the electrons trapped, but provides a barrier after the removal of voltage. Therefore, after the implantation of charge, there is little change in the threshold voltage thereby ensuring an excellent memory retaining property.
JP16042878A 1978-12-25 1978-12-25 Non-voratile semiconductor memory device Pending JPS5587490A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16042878A JPS5587490A (en) 1978-12-25 1978-12-25 Non-voratile semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16042878A JPS5587490A (en) 1978-12-25 1978-12-25 Non-voratile semiconductor memory device

Publications (1)

Publication Number Publication Date
JPS5587490A true JPS5587490A (en) 1980-07-02

Family

ID=15714709

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16042878A Pending JPS5587490A (en) 1978-12-25 1978-12-25 Non-voratile semiconductor memory device

Country Status (1)

Country Link
JP (1) JPS5587490A (en)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58171737A (en) * 1982-04-02 1983-10-08 Citizen Watch Co Ltd Nonvolatile semiconductor memory
JPS60161674A (en) * 1984-02-02 1985-08-23 Matsushita Electronics Corp Semiconductor memory device
JPS63146471A (en) * 1987-11-20 1988-06-18 Agency Of Ind Science & Technol Manufacture of mis element
US4870470A (en) * 1987-10-16 1989-09-26 International Business Machines Corporation Non-volatile memory cell having Si rich silicon nitride charge trapping layer
US5319229A (en) * 1991-08-22 1994-06-07 Noriyuki Shimoji Semiconductor nonvolatile memory with wide memory window and long data retention time
US5654568A (en) * 1992-01-17 1997-08-05 Rohm Co., Ltd. Semiconductor device including nonvolatile memories
FR2770328A1 (en) * 1997-10-29 1999-04-30 Sgs Thomson Microelectronics REMANENT MEMORY POINT
EP1139399A2 (en) * 2000-03-31 2001-10-04 Canon Sales Co., Inc. Film-forming surface reforming method and semiconductor device manufacturing method
US6753568B1 (en) 1996-11-15 2004-06-22 Hitachi, Ltd. Memory device
JP2005260197A (en) * 2004-03-11 2005-09-22 Hynix Semiconductor Inc Semiconductor element and its manufacturing method
JP2009289823A (en) * 2008-05-27 2009-12-10 Renesas Technology Corp Nonvolatile semiconductor storage device
CN105470203A (en) * 2014-09-30 2016-04-06 瑞萨电子株式会社 Method of manufacturing semiconductor device

Cited By (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58171737A (en) * 1982-04-02 1983-10-08 Citizen Watch Co Ltd Nonvolatile semiconductor memory
JPS60161674A (en) * 1984-02-02 1985-08-23 Matsushita Electronics Corp Semiconductor memory device
US4870470A (en) * 1987-10-16 1989-09-26 International Business Machines Corporation Non-volatile memory cell having Si rich silicon nitride charge trapping layer
JPS63146471A (en) * 1987-11-20 1988-06-18 Agency Of Ind Science & Technol Manufacture of mis element
US5319229A (en) * 1991-08-22 1994-06-07 Noriyuki Shimoji Semiconductor nonvolatile memory with wide memory window and long data retention time
US5654568A (en) * 1992-01-17 1997-08-05 Rohm Co., Ltd. Semiconductor device including nonvolatile memories
US6753568B1 (en) 1996-11-15 2004-06-22 Hitachi, Ltd. Memory device
FR2770328A1 (en) * 1997-10-29 1999-04-30 Sgs Thomson Microelectronics REMANENT MEMORY POINT
EP0913871A1 (en) * 1997-10-29 1999-05-06 STMicroelectronics SA Nonvolatile memory point
US6218700B1 (en) 1997-10-29 2001-04-17 Stmicroelectronics S.A. Remanent memory device
EP1139399A3 (en) * 2000-03-31 2003-02-05 Canon Sales Co., Inc. Film-forming surface reforming method and semiconductor device manufacturing method
EP1139399A2 (en) * 2000-03-31 2001-10-04 Canon Sales Co., Inc. Film-forming surface reforming method and semiconductor device manufacturing method
JP2005260197A (en) * 2004-03-11 2005-09-22 Hynix Semiconductor Inc Semiconductor element and its manufacturing method
JP2009289823A (en) * 2008-05-27 2009-12-10 Renesas Technology Corp Nonvolatile semiconductor storage device
CN105470203A (en) * 2014-09-30 2016-04-06 瑞萨电子株式会社 Method of manufacturing semiconductor device
EP3002779A3 (en) * 2014-09-30 2016-05-04 Renesas Electronics Corporation Method of manufacturing semiconductor device
JP2016072470A (en) * 2014-09-30 2016-05-09 ルネサスエレクトロニクス株式会社 Method of manufacturing semiconductor device
US9508554B2 (en) 2014-09-30 2016-11-29 Renesas Electronics Corporation Method of manufacturing semiconductor device
TWI668841B (en) * 2014-09-30 2019-08-11 日商瑞薩電子股份有限公司 Method of manufacturing semiconductor device
CN105470203B (en) * 2014-09-30 2020-01-24 瑞萨电子株式会社 Method for manufacturing semiconductor device

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