JPS5613773A - Fet and method of manufacturing same - Google Patents

Fet and method of manufacturing same

Info

Publication number
JPS5613773A
JPS5613773A JP9005880A JP9005880A JPS5613773A JP S5613773 A JPS5613773 A JP S5613773A JP 9005880 A JP9005880 A JP 9005880A JP 9005880 A JP9005880 A JP 9005880A JP S5613773 A JPS5613773 A JP S5613773A
Authority
JP
Japan
Prior art keywords
fet
manufacturing same
manufacturing
same
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9005880A
Other languages
English (en)
Inventor
Daaruberuku Rainharuto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Licentia Patent Verwaltungs GmbH
Original Assignee
Licentia Patent Verwaltungs GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Licentia Patent Verwaltungs GmbH filed Critical Licentia Patent Verwaltungs GmbH
Publication of JPS5613773A publication Critical patent/JPS5613773A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/185—Joining of semiconductor bodies for junction formation
    • H01L21/187—Joining of semiconductor bodies for junction formation by direct bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1066—Gate region of field-effect devices with PN junction gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66416—Static induction transistors [SIT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
    • H01L29/66454—Static induction transistors [SIT], e.g. permeable base transistors [PBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42356—Disposition, e.g. buried gate electrode
    • H01L29/4236—Disposition, e.g. buried gate electrode within a trench, e.g. trench gate electrode, groove gate electrode

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Recrystallisation Techniques (AREA)
JP9005880A 1979-07-03 1980-07-03 Fet and method of manufacturing same Pending JPS5613773A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2926741A DE2926741C2 (de) 1979-07-03 1979-07-03 Feldeffekt-Transistor und Verfahren zu seiner Herstellung

Publications (1)

Publication Number Publication Date
JPS5613773A true JPS5613773A (en) 1981-02-10

Family

ID=6074750

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9005880A Pending JPS5613773A (en) 1979-07-03 1980-07-03 Fet and method of manufacturing same

Country Status (4)

Country Link
US (1) US4468683A (ja)
EP (1) EP0022483B1 (ja)
JP (1) JPS5613773A (ja)
DE (1) DE2926741C2 (ja)

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6039872A (ja) * 1983-08-15 1985-03-01 Nippon Telegr & Teleph Corp <Ntt> 縦型電界効果トランジスタの製造方法
JPS60121715A (ja) * 1983-12-06 1985-06-29 Toshiba Corp 半導体ウエハの接合方法
JPS60236254A (ja) * 1984-05-09 1985-11-25 Toshiba Corp 半導体基板の製造方法
JPS60236210A (ja) * 1984-05-10 1985-11-25 Toshiba Corp 半導体ウエハの接合方法
JPS614221A (ja) * 1984-06-18 1986-01-10 Toshiba Corp 半導体基板の接合方法
JPS6142154A (ja) * 1984-08-02 1986-02-28 Toshiba Corp 半導体基板の製造方法
JPS61183916A (ja) * 1985-02-08 1986-08-16 Toshiba Corp 半導体基板の製造方法
JPS61183917A (ja) * 1985-02-08 1986-08-16 Toshiba Corp 半導体装置の製造方法
JPS61183914A (ja) * 1985-02-08 1986-08-16 Toshiba Corp 半導体基板の製造方法
JPS61183915A (ja) * 1985-02-08 1986-08-16 Toshiba Corp 化合物半導体装置の製造方法
JPS61184843A (ja) * 1985-02-13 1986-08-18 Toshiba Corp 複合半導体装置とその製造方法
JPS61292934A (ja) * 1985-06-21 1986-12-23 Toshiba Corp 半導体素子の製造方法
JPS62122119A (ja) * 1985-11-21 1987-06-03 Toshiba Corp 半導体装置の製造方法
JPH02161748A (ja) * 1989-11-10 1990-06-21 Toshiba Corp 半導体ウェハの製造方法
JPH07169659A (ja) * 1994-10-25 1995-07-04 Toshiba Corp 半導体ウエハの接合方法

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04368182A (ja) * 1991-06-17 1992-12-21 Mitsubishi Electric Corp 半導体装置およびその製造方法
US5298787A (en) * 1979-08-10 1994-03-29 Massachusetts Institute Of Technology Semiconductor embedded layer technology including permeable base transistor
CA1192669A (en) * 1982-06-24 1985-08-27 Scott C. Blackstone Vertical igfet with internal gate and method of making same
US4546375A (en) * 1982-06-24 1985-10-08 Rca Corporation Vertical IGFET with internal gate and method for making same
US5416354A (en) * 1989-01-06 1995-05-16 Unitrode Corporation Inverted epitaxial process semiconductor devices
GB2237929A (en) * 1989-10-23 1991-05-15 Philips Electronic Associated A method of manufacturing a semiconductor device
US5648665A (en) * 1994-04-28 1997-07-15 Ngk Insulators, Ltd. Semiconductor device having a plurality of cavity defined gating regions and a fabrication method therefor
JP3245308B2 (ja) * 1994-08-26 2002-01-15 日本碍子株式会社 半導体装置の製造方法
DE59812848D1 (de) * 1997-10-11 2005-07-14 Conti Temic Microelectronic Gehäuse zur Aufnahme elektronischer Bauelemente

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2728034A (en) * 1950-09-08 1955-12-20 Rca Corp Semi-conductor devices with opposite conductivity zones
US2930950A (en) * 1956-12-10 1960-03-29 Teszner Stanislas High power field-effect transistor
FR1317256A (fr) * 1961-12-16 1963-02-08 Teszner Stanislas Perfectionnements aux dispositifs semi-conducteurs dits tecnetrons multibâtonnets
US3381187A (en) * 1964-08-18 1968-04-30 Hughes Aircraft Co High-frequency field-effect triode device
US3363153A (en) * 1965-06-01 1968-01-09 Gen Telephone & Elect Solid state triode having gate electrode therein subtending a portion of the source electrode
US3355636A (en) * 1965-06-29 1967-11-28 Rca Corp High power, high frequency transistor
DE1514727A1 (de) * 1965-09-30 1969-06-19 Schaefer Dipl Phys Siegfried Herstellung von pn-UEbergaengen durch plastische Verformung von Halbleitern
CH436492A (de) * 1965-10-21 1967-05-31 Bbc Brown Boveri & Cie Steuerbare Halbleitervorrichtung mit mehreren Schichten
US3509432A (en) * 1966-06-15 1970-04-28 Massachusetts Inst Technology Field effect space-charge-limited solid state thin-film device
US3584268A (en) * 1967-03-03 1971-06-08 Xerox Corp Inverted space charge limited triode
JPS5134268B2 (ja) * 1972-07-13 1976-09-25
DE2547262C3 (de) * 1975-10-22 1981-07-16 Reinhard Dr. 7101 Flein Dahlberg Thermoelektrische Anordnung mit großen Temperaturgradienten und Verwendung
US3999281A (en) * 1976-01-16 1976-12-28 The United States Of America As Represented By The Secretary Of The Air Force Method for fabricating a gridded Schottky barrier field effect transistor
JPS5368178A (en) * 1976-11-30 1978-06-17 Handotai Kenkyu Shinkokai Fet transistor
DE2837394A1 (de) * 1978-08-26 1980-03-20 Semikron Gleichrichterbau Halbleiter-brueckengleichrichteranordnung und verfahren zu ihrer herstellung

Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6339110B2 (ja) * 1983-08-15 1988-08-03 Nippon Telegraph & Telephone
JPS6039872A (ja) * 1983-08-15 1985-03-01 Nippon Telegr & Teleph Corp <Ntt> 縦型電界効果トランジスタの製造方法
JPS60121715A (ja) * 1983-12-06 1985-06-29 Toshiba Corp 半導体ウエハの接合方法
JPS60236254A (ja) * 1984-05-09 1985-11-25 Toshiba Corp 半導体基板の製造方法
JPH0546099B2 (ja) * 1984-05-09 1993-07-13 Tokyo Shibaura Electric Co
JPS60236210A (ja) * 1984-05-10 1985-11-25 Toshiba Corp 半導体ウエハの接合方法
JPS614221A (ja) * 1984-06-18 1986-01-10 Toshiba Corp 半導体基板の接合方法
JPS6142154A (ja) * 1984-08-02 1986-02-28 Toshiba Corp 半導体基板の製造方法
JPH0546100B2 (ja) * 1984-08-02 1993-07-13 Tokyo Shibaura Electric Co
JPS61183914A (ja) * 1985-02-08 1986-08-16 Toshiba Corp 半導体基板の製造方法
JPS61183915A (ja) * 1985-02-08 1986-08-16 Toshiba Corp 化合物半導体装置の製造方法
JPS61183917A (ja) * 1985-02-08 1986-08-16 Toshiba Corp 半導体装置の製造方法
JPS61183916A (ja) * 1985-02-08 1986-08-16 Toshiba Corp 半導体基板の製造方法
JPS61184843A (ja) * 1985-02-13 1986-08-18 Toshiba Corp 複合半導体装置とその製造方法
JPH0473621B2 (ja) * 1985-02-13 1992-11-24
JPS61292934A (ja) * 1985-06-21 1986-12-23 Toshiba Corp 半導体素子の製造方法
JPS62122119A (ja) * 1985-11-21 1987-06-03 Toshiba Corp 半導体装置の製造方法
JPH02161748A (ja) * 1989-11-10 1990-06-21 Toshiba Corp 半導体ウェハの製造方法
JPH07169659A (ja) * 1994-10-25 1995-07-04 Toshiba Corp 半導体ウエハの接合方法

Also Published As

Publication number Publication date
EP0022483A1 (de) 1981-01-21
DE2926741A1 (de) 1981-01-08
US4468683A (en) 1984-08-28
EP0022483B1 (de) 1983-03-23
DE2926741C2 (de) 1982-09-09

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