JPS56137632A - Pattern forming - Google Patents

Pattern forming

Info

Publication number
JPS56137632A
JPS56137632A JP4089980A JP4089980A JPS56137632A JP S56137632 A JPS56137632 A JP S56137632A JP 4089980 A JP4089980 A JP 4089980A JP 4089980 A JP4089980 A JP 4089980A JP S56137632 A JPS56137632 A JP S56137632A
Authority
JP
Japan
Prior art keywords
pattern
space
regist
resists
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4089980A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6310891B2 (enrdf_load_stackoverflow
Inventor
Masaki Ito
Sotaro Edokoro
Hiroshi Gokan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP4089980A priority Critical patent/JPS56137632A/ja
Publication of JPS56137632A publication Critical patent/JPS56137632A/ja
Publication of JPS6310891B2 publication Critical patent/JPS6310891B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
JP4089980A 1980-03-28 1980-03-28 Pattern forming Granted JPS56137632A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4089980A JPS56137632A (en) 1980-03-28 1980-03-28 Pattern forming

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4089980A JPS56137632A (en) 1980-03-28 1980-03-28 Pattern forming

Publications (2)

Publication Number Publication Date
JPS56137632A true JPS56137632A (en) 1981-10-27
JPS6310891B2 JPS6310891B2 (enrdf_load_stackoverflow) 1988-03-10

Family

ID=12593351

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4089980A Granted JPS56137632A (en) 1980-03-28 1980-03-28 Pattern forming

Country Status (1)

Country Link
JP (1) JPS56137632A (enrdf_load_stackoverflow)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6010624A (ja) * 1983-06-29 1985-01-19 Mitsubishi Electric Corp パタ−ン形成方法
US5981114A (en) * 1993-11-16 1999-11-09 Nec Corporation Photoresist check patterns in highly integrated circuits having multi-level interconnect layers
US6979860B2 (en) * 2003-05-30 2005-12-27 Kabushiki Kaisha Toshiba Semiconductor device and manufacturing method thereof
DE102006006570A1 (de) * 2006-01-31 2007-08-09 Infineon Technologies Ag Verfahren zur Herstellung von Anordnung von Leitern auf Halbleiterbauelementen
DE102007008934A1 (de) * 2007-01-29 2008-08-28 Qimonda Ag Vorrichtung und Speichervorrichtung, Verfahren zur Herstellung von Strukturen in einem Werkstück und Verfahren zur Herstellung einer Speichervorrichtung

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6010624A (ja) * 1983-06-29 1985-01-19 Mitsubishi Electric Corp パタ−ン形成方法
US5981114A (en) * 1993-11-16 1999-11-09 Nec Corporation Photoresist check patterns in highly integrated circuits having multi-level interconnect layers
US6979860B2 (en) * 2003-05-30 2005-12-27 Kabushiki Kaisha Toshiba Semiconductor device and manufacturing method thereof
US7241651B2 (en) 2003-05-30 2007-07-10 Kabushiki Kaisha Toshiba Semiconductor device manufacturing method
US7422937B2 (en) 2003-05-30 2008-09-09 Kabushiki Kaisha Toshiba Semiconductor device and manufacturing method thereof
US7544613B2 (en) 2003-05-30 2009-06-09 Kabushiki Kaisha Toshiba Method of manufacturing semiconductor device with an improved wiring layer structure
DE102006006570A1 (de) * 2006-01-31 2007-08-09 Infineon Technologies Ag Verfahren zur Herstellung von Anordnung von Leitern auf Halbleiterbauelementen
DE102007008934A1 (de) * 2007-01-29 2008-08-28 Qimonda Ag Vorrichtung und Speichervorrichtung, Verfahren zur Herstellung von Strukturen in einem Werkstück und Verfahren zur Herstellung einer Speichervorrichtung

Also Published As

Publication number Publication date
JPS6310891B2 (enrdf_load_stackoverflow) 1988-03-10

Similar Documents

Publication Publication Date Title
JPS56137632A (en) Pattern forming
JPS5630129A (en) Manufacture of photomask
JPS5339075A (en) Step and repeat exposure method of masks
JPS56137633A (en) Pattern forming
JPS55157737A (en) Resist pattern forming method for photofabrication
JPS57112753A (en) Exposure method
JPS5461931A (en) Forming method of photo resist patterns
KR910001875A (ko) 노광용 마스크의 제조방법
JPS5277671A (en) Method and equipment of masking
JPS5610930A (en) Manufacture of semiconductor device
JPS56137630A (en) Pattern forming
JPS533069A (en) Photoetching mask
JPS5272175A (en) Mask patterning of resist meterial
JPS6421450A (en) Production of mask
JPS51139268A (en) Method of producing pattern
JPS51114931A (en) Photoresist pattern formation method
JPS5339060A (en) Lot number marking method to wafers
JPS5347825A (en) Photoresist exposure
JPS5413334A (en) Exposure
JPS5656633A (en) Manufacture of semiconductor element
JPS56107554A (en) Formation of pattern
JPS52150976A (en) Making method of etching mask
JPS57176040A (en) Preparation of photomask
JPS5381083A (en) Focusing method of projection exposure apparatus
JPS53116784A (en) Pattern transfer method to photo resist film