JPS6310891B2 - - Google Patents

Info

Publication number
JPS6310891B2
JPS6310891B2 JP55040899A JP4089980A JPS6310891B2 JP S6310891 B2 JPS6310891 B2 JP S6310891B2 JP 55040899 A JP55040899 A JP 55040899A JP 4089980 A JP4089980 A JP 4089980A JP S6310891 B2 JPS6310891 B2 JP S6310891B2
Authority
JP
Japan
Prior art keywords
pattern
resist
spaces
exposure
space
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55040899A
Other languages
English (en)
Japanese (ja)
Other versions
JPS56137632A (en
Inventor
Masaki Ito
Sotaro Edokoro
Hiroshi Gokan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP4089980A priority Critical patent/JPS56137632A/ja
Publication of JPS56137632A publication Critical patent/JPS56137632A/ja
Publication of JPS6310891B2 publication Critical patent/JPS6310891B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Bipolar Transistors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP4089980A 1980-03-28 1980-03-28 Pattern forming Granted JPS56137632A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4089980A JPS56137632A (en) 1980-03-28 1980-03-28 Pattern forming

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4089980A JPS56137632A (en) 1980-03-28 1980-03-28 Pattern forming

Publications (2)

Publication Number Publication Date
JPS56137632A JPS56137632A (en) 1981-10-27
JPS6310891B2 true JPS6310891B2 (enrdf_load_stackoverflow) 1988-03-10

Family

ID=12593351

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4089980A Granted JPS56137632A (en) 1980-03-28 1980-03-28 Pattern forming

Country Status (1)

Country Link
JP (1) JPS56137632A (enrdf_load_stackoverflow)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6010624A (ja) * 1983-06-29 1985-01-19 Mitsubishi Electric Corp パタ−ン形成方法
JP2658841B2 (ja) * 1993-11-16 1997-09-30 日本電気株式会社 フォトレジストチェックパターン
JP3854247B2 (ja) 2003-05-30 2006-12-06 株式会社東芝 不揮発性半導体記憶装置
US20070178684A1 (en) * 2006-01-31 2007-08-02 Torsten Mueller Method for producing conductor arrays on semiconductor devices
US20080181007A1 (en) * 2007-01-29 2008-07-31 Qimonda Ag Semiconductor Device with Reduced Structural Pitch and Method of Making the Same

Also Published As

Publication number Publication date
JPS56137632A (en) 1981-10-27

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