JPS56131987A - Semiconductor laser - Google Patents

Semiconductor laser

Info

Publication number
JPS56131987A
JPS56131987A JP3529280A JP3529280A JPS56131987A JP S56131987 A JPS56131987 A JP S56131987A JP 3529280 A JP3529280 A JP 3529280A JP 3529280 A JP3529280 A JP 3529280A JP S56131987 A JPS56131987 A JP S56131987A
Authority
JP
Japan
Prior art keywords
active layer
oscillation
clad layer
level
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3529280A
Other languages
Japanese (ja)
Other versions
JPH0156551B2 (en
Inventor
Yuichi Shimizu
Kunio Ito
Takashi Sugino
Masaru Wada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP3529280A priority Critical patent/JPS56131987A/en
Priority to US06/224,821 priority patent/US4392227A/en
Priority to CA000368427A priority patent/CA1154852A/en
Priority to DE8181100192T priority patent/DE3171754D1/en
Priority to EP81100192A priority patent/EP0032401B1/en
Publication of JPS56131987A publication Critical patent/JPS56131987A/en
Publication of JPH0156551B2 publication Critical patent/JPH0156551B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2238—Buried stripe structure with a terraced structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3201—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures incorporating bulkstrain effects, e.g. strain compensation, strain related to polarisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To stabilize the horizontal mode of oscillation by laminating the 1st clad layer, an active layer and the 2nd clad layer on the surface of a substrate having difference in level and thereby forming the cross section of the active layer in a level-difference part in the shape of a convex lens. CONSTITUTION:On the occasion that the clad layer 2, the active layer 3 and the clad layer 4 are laminated on the substrate 1 having difference in level, the active layer 3 is formed in the shape of a convex lens which is thick in the central part and then on both sides. Moreover, the clad layer 4 is stretched out at the shoulder parts thereof and the thickness of the clad layers is made larger than other parts in the region of oscillation. With the angular part of the clad layer a current injection region 6 contacts and electriccurrent is injected in the center of the region of oscillation. In this constitution, it is unnecessary to provide a bend in the active layer 3, while the distribution of effective index of refraction within the region of oscillation forms a parabola having a peak in the center of the lens-shaped active layer. Accordingly, the width W thereof can be made larger than that of the existing ones of level-difference type, whereby manufacture becomes easier. In addition, the threshold value is lowered, while the outside differential efficiency is raised, and thus fundamental horizontal-mode oscillation up to three times or more of the threshold value is obtained.
JP3529280A 1980-01-14 1980-03-19 Semiconductor laser Granted JPS56131987A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP3529280A JPS56131987A (en) 1980-03-19 1980-03-19 Semiconductor laser
US06/224,821 US4392227A (en) 1980-01-14 1981-01-13 Terraced substrate semiconductor laser
CA000368427A CA1154852A (en) 1980-01-14 1981-01-13 Semiconductor laser
DE8181100192T DE3171754D1 (en) 1980-01-14 1981-01-13 Semiconductor laser
EP81100192A EP0032401B1 (en) 1980-01-14 1981-01-13 Semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3529280A JPS56131987A (en) 1980-03-19 1980-03-19 Semiconductor laser

Publications (2)

Publication Number Publication Date
JPS56131987A true JPS56131987A (en) 1981-10-15
JPH0156551B2 JPH0156551B2 (en) 1989-11-30

Family

ID=12437691

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3529280A Granted JPS56131987A (en) 1980-01-14 1980-03-19 Semiconductor laser

Country Status (1)

Country Link
JP (1) JPS56131987A (en)

Also Published As

Publication number Publication date
JPH0156551B2 (en) 1989-11-30

Similar Documents

Publication Publication Date Title
JPS56131987A (en) Semiconductor laser
JPS5681993A (en) Semiconductor laser element
JPS5673487A (en) Semiconductor laser and its manufacture
JPS57132105A (en) Buried type optical waveguide path
JPS5763885A (en) Semiconductor laser device
HIROICHI et al. Semiconductor laser
JPS5728390A (en) Semiconductor laser
JPS57162381A (en) Buried type semiconductor laser element
JPS55108789A (en) Semiconductor laser
JPS56112785A (en) Semiconductor laser
JPS5522807A (en) Semiconductor laser element and manufacturing of the same
JPS5726488A (en) Semiconductor light emitting device
JPS5696890A (en) Semiconductor light emitting device
JPS5673485A (en) Semiconductor luminous element
JPS647681A (en) Distributed reflex semiconductor laser
JPS56169388A (en) Semiconductor laser
ES8204887A1 (en) Semiconductor laser having a doped surface zone
JPS57112090A (en) Semiconductor laser
JPS57157586A (en) Semiconductor laser device
JPS6423233A (en) Manufacture of optical wavelength converting element
JPS56169387A (en) Semiconductor laser
JPS56131988A (en) Semiconductor laser
JPS5712590A (en) Buried type double heterojunction laser element
JPS6442884A (en) Semiconductor laser element
JPS57157587A (en) Semiconductor laser device