JPS56131988A - Semiconductor laser - Google Patents

Semiconductor laser

Info

Publication number
JPS56131988A
JPS56131988A JP3529380A JP3529380A JPS56131988A JP S56131988 A JPS56131988 A JP S56131988A JP 3529380 A JP3529380 A JP 3529380A JP 3529380 A JP3529380 A JP 3529380A JP S56131988 A JPS56131988 A JP S56131988A
Authority
JP
Japan
Prior art keywords
bend parts
thickness
parts
active region
bend
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3529380A
Other languages
Japanese (ja)
Inventor
Kunio Ito
Takashi Sugino
Masaru Wada
Yuichi Shimizu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP3529380A priority Critical patent/JPS56131988A/en
Priority to US06/224,821 priority patent/US4392227A/en
Priority to EP81100192A priority patent/EP0032401B1/en
Priority to CA000368427A priority patent/CA1154852A/en
Priority to DE8181100192T priority patent/DE3171754D1/en
Publication of JPS56131988A publication Critical patent/JPS56131988A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2238—Buried stripe structure with a terraced structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3201—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures incorporating bulkstrain effects, e.g. strain compensation, strain related to polarisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To realize single-mode oscillation between bend parts with a substrate having no difference in level by a method wherein the thickness of a part of the region of an active layer held between two bend parts is made larger than that of the part other than the above part. CONSTITUTION:The substrate 1 is not provided with any difference in level, while the active region 3 is not surrounded by the exactly bent parts, but is simply curved with some curvature. Moreover, it is unnecessary that the thickness of the active region 3 is uniform between the bend parts, and it is only required that a part thereof is thicker than the flat part thereof. To an extrame, the part between the bend parts is made to have the same thickness with that of the flat part. In addition, the thickness of the 1st clad layer 2 is not required to be thinned especially at the flat part, only requiring to be about 1mum. By this constitution, the index of the refraction between the bend parts of the active region becomes higher only slightly than that outside thereof and, even when the interval between the bend parts is increased to about 10mum, the oscillation of single mode is obtained, and thus manufacture of a laser element is facilitated.
JP3529380A 1980-01-14 1980-03-19 Semiconductor laser Pending JPS56131988A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP3529380A JPS56131988A (en) 1980-03-19 1980-03-19 Semiconductor laser
US06/224,821 US4392227A (en) 1980-01-14 1981-01-13 Terraced substrate semiconductor laser
EP81100192A EP0032401B1 (en) 1980-01-14 1981-01-13 Semiconductor laser
CA000368427A CA1154852A (en) 1980-01-14 1981-01-13 Semiconductor laser
DE8181100192T DE3171754D1 (en) 1980-01-14 1981-01-13 Semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3529380A JPS56131988A (en) 1980-03-19 1980-03-19 Semiconductor laser

Publications (1)

Publication Number Publication Date
JPS56131988A true JPS56131988A (en) 1981-10-15

Family

ID=12437718

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3529380A Pending JPS56131988A (en) 1980-01-14 1980-03-19 Semiconductor laser

Country Status (1)

Country Link
JP (1) JPS56131988A (en)

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