JPS56131968A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS56131968A
JPS56131968A JP3592480A JP3592480A JPS56131968A JP S56131968 A JPS56131968 A JP S56131968A JP 3592480 A JP3592480 A JP 3592480A JP 3592480 A JP3592480 A JP 3592480A JP S56131968 A JPS56131968 A JP S56131968A
Authority
JP
Japan
Prior art keywords
mask
type
guard ring
layer
si3n4
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3592480A
Other languages
Japanese (ja)
Other versions
JPS6328343B2 (en
Inventor
Mitsugi Takeda
Yukio Miyazaki
Yoshiyuki Nakai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP3592480A priority Critical patent/JPS56131968A/en
Publication of JPS56131968A publication Critical patent/JPS56131968A/en
Publication of JPS6328343B2 publication Critical patent/JPS6328343B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/872—Schottky diodes

Abstract

PURPOSE:To miniaturize the element shape free of mismatching in mask positioning and with narrowed width of ring, by selectively etching only the surrounding portion of the mask used in the previous process to utilize as the mask for forming guard ring. CONSTITUTION:An N<+> type buried layer 2 and an N type epitaxial layer 3 are formed on a P type Si 1, applying Si3N4 mask 4 thereon and after etching the layer 3, SiO2 film 5 is formed by oxidation. Then, when Si3N4 is etched all over, the surrounding portions are removed rapidly and selectively without the use of mask to form mask 10. Using the mask 10 and SiO2 5 as masks, a P type guard ring 7 is diffusion formed on the epitaxial layer 3. The mask 10 is removed and an Al electrode 8 is attached. In this constitution, because the width of guard ring can be formed in small size, a Shottky barrier diode can be formed in a compact size.
JP3592480A 1980-03-18 1980-03-18 Manufacture of semiconductor device Granted JPS56131968A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3592480A JPS56131968A (en) 1980-03-18 1980-03-18 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3592480A JPS56131968A (en) 1980-03-18 1980-03-18 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS56131968A true JPS56131968A (en) 1981-10-15
JPS6328343B2 JPS6328343B2 (en) 1988-06-08

Family

ID=12455576

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3592480A Granted JPS56131968A (en) 1980-03-18 1980-03-18 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS56131968A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0093866A2 (en) * 1982-05-10 1983-11-16 Siemens Aktiengesellschaft Schottky diode

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0093866A2 (en) * 1982-05-10 1983-11-16 Siemens Aktiengesellschaft Schottky diode
EP0093866A3 (en) * 1982-05-10 1984-12-19 Siemens Aktiengesellschaft Schottky diode

Also Published As

Publication number Publication date
JPS6328343B2 (en) 1988-06-08

Similar Documents

Publication Publication Date Title
JPS56131968A (en) Manufacture of semiconductor device
JPS52104870A (en) Manufacture for semiconductor device
JPS575368A (en) Manufacture of semiconductor device
JPS57176767A (en) Manufacture of semiconductor device
JPS56137650A (en) Manufacture of semiconductor device
JPS55153325A (en) Manufacture of semiconductor device
JPS5257783A (en) Semiconductor wafer
JPS57155772A (en) Manufacture of semiconductor device
JPS54121684A (en) Manufacture of semkconductor device
JPS5735368A (en) Manufacture of semiconductor device
JPS52117079A (en) Preparation of semiconductor device
JPS5742143A (en) Manufacture of semiconductor device
JPS52141573A (en) Manufacture of semiconductor device
JPS55128879A (en) Semiconductor device
JPS535578A (en) Manufacture of semiconductor device
JPS55160445A (en) Manufacture of semiconductor device
JPS57104272A (en) Semiconductor device
JPS5610923A (en) Preparation of semiconductor device
JPS5567134A (en) Method for manufacturing electrode of semiconductor device
JPS56140643A (en) Manufacture of semiconductor device
JPS5713759A (en) Manufacture of semiconductor device
JPS5691476A (en) Semiconductor
JPS5373971A (en) Manufacture for semiconductor device
JPS5487470A (en) Manufacture of semiconductor device
JPS54118178A (en) Manufacture of charge-coupled device