JPS56130949A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS56130949A
JPS56130949A JP3502880A JP3502880A JPS56130949A JP S56130949 A JPS56130949 A JP S56130949A JP 3502880 A JP3502880 A JP 3502880A JP 3502880 A JP3502880 A JP 3502880A JP S56130949 A JPS56130949 A JP S56130949A
Authority
JP
Japan
Prior art keywords
hole
insulating layer
laser
metallic wire
disconnection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3502880A
Other languages
Japanese (ja)
Inventor
Yoshiyuki Takagi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP3502880A priority Critical patent/JPS56130949A/en
Publication of JPS56130949A publication Critical patent/JPS56130949A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To prevent the disconnection of a metallic wire in a semiconductor device by selectively forming a hole at an insulating layer covered on a semiconductor substrate, emitting a laser or an electron beam to the region containing the hole to produce a melt flow at the stepwise hole, and alleviating the step of the hole. CONSTITUTION:An insulating layer 12 having a hole is formed on a semiconductor substrate 11. When a laser or an electron beam is emitted to an insulating layer containing a hole step under the condition of heating and melting the insulating layer, the insulating layer in the vicinity of the hole is molten to flow the melt, and the hole step is thus rounded at the corner. Thereafter, a metallic wire 13 is covered thereon. The emitting condition when the insulating layer is silicon dioxide includes a wavelength of 10mum of a laser, a power density of 100kappaW/cm<3> of carbon oxide gas laser. Thus, the disconnection of the metallic wire due to the step of the stepwise hole of the insulating layer can be readily prevented.
JP3502880A 1980-03-18 1980-03-18 Manufacture of semiconductor device Pending JPS56130949A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3502880A JPS56130949A (en) 1980-03-18 1980-03-18 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3502880A JPS56130949A (en) 1980-03-18 1980-03-18 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS56130949A true JPS56130949A (en) 1981-10-14

Family

ID=12430603

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3502880A Pending JPS56130949A (en) 1980-03-18 1980-03-18 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS56130949A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6242436A (en) * 1985-08-19 1987-02-24 Sony Corp Manufacture of semiconductor device
JPS6295874A (en) * 1985-10-23 1987-05-02 Sony Corp Manufacture of semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6242436A (en) * 1985-08-19 1987-02-24 Sony Corp Manufacture of semiconductor device
JPS6295874A (en) * 1985-10-23 1987-05-02 Sony Corp Manufacture of semiconductor device

Similar Documents

Publication Publication Date Title
IE51992B1 (en) Method for manufacturing a semiconductor device
JPS5519857A (en) Semiconductor
JPS5753947A (en) Transistor and electronic device containing it
JPS56130949A (en) Manufacture of semiconductor device
JPS5775442A (en) Semiconductor device
JPS5612748A (en) Semiconductor device
JPS57113247A (en) Manufacture of semiconductor device
JPS57113242A (en) Marking device for semiconductor wafer
JPS57104252A (en) Polycrystal silicon-fuse-memory and its manufacture
JPS5797633A (en) Hybrid integrated circuit
JPS57122565A (en) Semiconductor device
JPS57106141A (en) Connecting method for hybrid integrated circuit substrate to semiconductor pellet
JPS5817625A (en) Manufacture of semiconductor device
JPS56126915A (en) Manufacture of semiconductor device
JPS5568057A (en) Electron gun
JPS5683940A (en) Manufacturing of semiconductor device
JPS5543822A (en) Semiconductor light emission device
JPS5727055A (en) Semiconductor device
JPH0691092B2 (en) Wiring layer flattening method
JPS5745262A (en) Sealing and fitting structure of semiconductor device
JPS56142631A (en) Manufacture of semiconductor device
JPH0126191B2 (en)
JPS56103410A (en) Manufacture of coil
JPS57118668A (en) Fuse rom structure for semiconductor device
JPS57106148A (en) Manufacture of semiconductor device