JPS5775442A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5775442A
JPS5775442A JP55151921A JP15192180A JPS5775442A JP S5775442 A JPS5775442 A JP S5775442A JP 55151921 A JP55151921 A JP 55151921A JP 15192180 A JP15192180 A JP 15192180A JP S5775442 A JPS5775442 A JP S5775442A
Authority
JP
Japan
Prior art keywords
fuse
poly
film
insulating film
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55151921A
Other languages
Japanese (ja)
Inventor
Yutaka Hatano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP55151921A priority Critical patent/JPS5775442A/en
Publication of JPS5775442A publication Critical patent/JPS5775442A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)

Abstract

PURPOSE:To prevent damage on IC parts due to fuse melting heat by providing a protecting layer whose area is larger than the fuse melting part directly under the fuse via an insulating film, and connecting a substrate and the protecting layer by a conductive material. CONSTITUTION:A square poly Si film 13 is provided on an insulating film 12 on an Si substrate 11. A fuse 15 such as poly Si and Al is formed via an insulating film 14 and covered by a CVD SiO2 film 16. A laser light incident window 17 whose area is smaller than the poly Si 13 is opened in the film 16 on the fuse melting part. Since the beam diameter of the laser light 21 is larger than the fuse diameter, part of the light heats the poly Si 13 through the insulating film 14. The heat is guided to a high concentration layer 20 through a thin stripe zone 18 of a layer 13 and a connecting hole 19. Therefore, the local temperature rise in the poly Si film 13 is alleviated, and the degradation of the nearby IC parts is avoided. Thus, circuit parts can be arranged on the part directly under the fuse or in its vicinity, and the degree of integration can be increased.
JP55151921A 1980-10-29 1980-10-29 Semiconductor device Pending JPS5775442A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55151921A JPS5775442A (en) 1980-10-29 1980-10-29 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55151921A JPS5775442A (en) 1980-10-29 1980-10-29 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5775442A true JPS5775442A (en) 1982-05-12

Family

ID=15529105

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55151921A Pending JPS5775442A (en) 1980-10-29 1980-10-29 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5775442A (en)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5856355A (en) * 1981-09-30 1983-04-04 Hitachi Ltd Semiconductor integrated circuit device
JPS59957A (en) * 1982-06-25 1984-01-06 Fujitsu Ltd Semiconductor device
JPS6076140A (en) * 1983-09-30 1985-04-30 Mitsubishi Electric Corp Semiconductor device
JPS6151966A (en) * 1984-08-22 1986-03-14 Mitsubishi Electric Corp Semiconductor memory device
JPS61107742A (en) * 1984-10-31 1986-05-26 Fujitsu Ltd Semiconductor device
JPS633432A (en) * 1986-06-24 1988-01-08 Nec Corp Semiconductor device
JPH04243150A (en) * 1991-01-18 1992-08-31 Nec Corp Polysilicon fuse
EP0622846A1 (en) * 1993-04-28 1994-11-02 International Business Machines Corporation Fabrication and laser deletion of microfuses
US6300232B1 (en) 1999-04-16 2001-10-09 Nec Corporation Semiconductor device having protective films surrounding a fuse and method of manufacturing thereof
JP2005057186A (en) * 2003-08-07 2005-03-03 Nec Electronics Corp Semiconductor device
US7067897B2 (en) 2002-02-19 2006-06-27 Kabushiki Kaisha Toshiba Semiconductor device

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5856355A (en) * 1981-09-30 1983-04-04 Hitachi Ltd Semiconductor integrated circuit device
JPH0312464B2 (en) * 1981-09-30 1991-02-20 Hitachi Ltd
JPS59957A (en) * 1982-06-25 1984-01-06 Fujitsu Ltd Semiconductor device
JPS6076140A (en) * 1983-09-30 1985-04-30 Mitsubishi Electric Corp Semiconductor device
JPS6151966A (en) * 1984-08-22 1986-03-14 Mitsubishi Electric Corp Semiconductor memory device
JPS61107742A (en) * 1984-10-31 1986-05-26 Fujitsu Ltd Semiconductor device
JPS633432A (en) * 1986-06-24 1988-01-08 Nec Corp Semiconductor device
JPH04243150A (en) * 1991-01-18 1992-08-31 Nec Corp Polysilicon fuse
EP0622846A1 (en) * 1993-04-28 1994-11-02 International Business Machines Corporation Fabrication and laser deletion of microfuses
US6300232B1 (en) 1999-04-16 2001-10-09 Nec Corporation Semiconductor device having protective films surrounding a fuse and method of manufacturing thereof
US7067897B2 (en) 2002-02-19 2006-06-27 Kabushiki Kaisha Toshiba Semiconductor device
JP2005057186A (en) * 2003-08-07 2005-03-03 Nec Electronics Corp Semiconductor device
US7994544B2 (en) 2003-08-07 2011-08-09 Renesas Electronics Corporation Semiconductor device having a fuse element
US8362524B2 (en) 2003-08-07 2013-01-29 Renesas Electronics Corporation Semiconductor device having a fuse element
US8610178B2 (en) 2003-08-07 2013-12-17 Renesas Electronics Corporation Semiconductor device having a fuse element
US9177912B2 (en) 2003-08-07 2015-11-03 Renesas Electronics Corporation Semiconductor device having a fuse element
US9620449B2 (en) 2003-08-07 2017-04-11 Renesas Electronics Corporation Semiconductor device having a fuse element

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