JPS574139A - Semiconductor device and manufacturing process therefor - Google Patents

Semiconductor device and manufacturing process therefor

Info

Publication number
JPS574139A
JPS574139A JP7766180A JP7766180A JPS574139A JP S574139 A JPS574139 A JP S574139A JP 7766180 A JP7766180 A JP 7766180A JP 7766180 A JP7766180 A JP 7766180A JP S574139 A JPS574139 A JP S574139A
Authority
JP
Japan
Prior art keywords
film
substrate plate
wiring layer
component parts
connection member
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7766180A
Other languages
Japanese (ja)
Inventor
Yutaka Hatano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP7766180A priority Critical patent/JPS574139A/en
Publication of JPS574139A publication Critical patent/JPS574139A/en
Pending legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To prevent a damage of the component parts of the surrounding circuit by a method wherein a conductive connection member having a protective layer around its circumference is formed on a transparent insulative substrate plate forming an integrated circuit, a laser beam is irradiated from a rear surface of the substrate plate so as to melt or connect the connection member. CONSTITUTION:For example, Si film 2 is selectively formed on a sapphire substrate plate 1, for example, a conductive connection member 3 such as poly-Si, Al is formed, directly or through an insulative film, on Si film so as to make a component part for use in cutting or connecting the electric current path. In case that CVD oxidation film 6 is formed on a surface of the wiring layer 5 after various kinds of devices and wiring layer 5 etc. are formed on the substrate plate 1, a welding part 7 in the member 3 is not covered with the oxidation film 6. After this operation, for example, a laser beam is irradiated from a rear surface of the substrate plate 1 to the melting part 7 so as to melt cut the member 3. It is possible to protect, for example, the wiring layer 5 formed near the melting part 7, by Si film 2 shielding the circumference of the melting part 7. In this way, the surrounding component parts may be prevented from being damaged, it is possible to improve a degree of integration of the component parts.
JP7766180A 1980-06-11 1980-06-11 Semiconductor device and manufacturing process therefor Pending JPS574139A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7766180A JPS574139A (en) 1980-06-11 1980-06-11 Semiconductor device and manufacturing process therefor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7766180A JPS574139A (en) 1980-06-11 1980-06-11 Semiconductor device and manufacturing process therefor

Publications (1)

Publication Number Publication Date
JPS574139A true JPS574139A (en) 1982-01-09

Family

ID=13640051

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7766180A Pending JPS574139A (en) 1980-06-11 1980-06-11 Semiconductor device and manufacturing process therefor

Country Status (1)

Country Link
JP (1) JPS574139A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4720470A (en) * 1983-12-15 1988-01-19 Laserpath Corporation Method of making electrical circuitry
JPS647426U (en) * 1987-06-30 1989-01-17
US5963825A (en) * 1992-08-26 1999-10-05 Hyundai Electronics America Method of fabrication of semiconductor fuse with polysilicon plate
US6049056A (en) * 1996-03-15 2000-04-11 International Business Machines Corporation Method of laser cutting a metal line on an MR head with a laser

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5228280A (en) * 1975-08-28 1977-03-03 Toshiba Corp Semiconductor device
JPS5380994A (en) * 1976-12-27 1978-07-17 Toshiba Corp Lift-off method

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5228280A (en) * 1975-08-28 1977-03-03 Toshiba Corp Semiconductor device
JPS5380994A (en) * 1976-12-27 1978-07-17 Toshiba Corp Lift-off method

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4720470A (en) * 1983-12-15 1988-01-19 Laserpath Corporation Method of making electrical circuitry
JPS647426U (en) * 1987-06-30 1989-01-17
US5963825A (en) * 1992-08-26 1999-10-05 Hyundai Electronics America Method of fabrication of semiconductor fuse with polysilicon plate
US6049056A (en) * 1996-03-15 2000-04-11 International Business Machines Corporation Method of laser cutting a metal line on an MR head with a laser

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