JPS574139A - Semiconductor device and manufacturing process therefor - Google Patents
Semiconductor device and manufacturing process thereforInfo
- Publication number
- JPS574139A JPS574139A JP7766180A JP7766180A JPS574139A JP S574139 A JPS574139 A JP S574139A JP 7766180 A JP7766180 A JP 7766180A JP 7766180 A JP7766180 A JP 7766180A JP S574139 A JPS574139 A JP S574139A
- Authority
- JP
- Japan
- Prior art keywords
- film
- substrate plate
- wiring layer
- component parts
- connection member
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE:To prevent a damage of the component parts of the surrounding circuit by a method wherein a conductive connection member having a protective layer around its circumference is formed on a transparent insulative substrate plate forming an integrated circuit, a laser beam is irradiated from a rear surface of the substrate plate so as to melt or connect the connection member. CONSTITUTION:For example, Si film 2 is selectively formed on a sapphire substrate plate 1, for example, a conductive connection member 3 such as poly-Si, Al is formed, directly or through an insulative film, on Si film so as to make a component part for use in cutting or connecting the electric current path. In case that CVD oxidation film 6 is formed on a surface of the wiring layer 5 after various kinds of devices and wiring layer 5 etc. are formed on the substrate plate 1, a welding part 7 in the member 3 is not covered with the oxidation film 6. After this operation, for example, a laser beam is irradiated from a rear surface of the substrate plate 1 to the melting part 7 so as to melt cut the member 3. It is possible to protect, for example, the wiring layer 5 formed near the melting part 7, by Si film 2 shielding the circumference of the melting part 7. In this way, the surrounding component parts may be prevented from being damaged, it is possible to improve a degree of integration of the component parts.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7766180A JPS574139A (en) | 1980-06-11 | 1980-06-11 | Semiconductor device and manufacturing process therefor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7766180A JPS574139A (en) | 1980-06-11 | 1980-06-11 | Semiconductor device and manufacturing process therefor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS574139A true JPS574139A (en) | 1982-01-09 |
Family
ID=13640051
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7766180A Pending JPS574139A (en) | 1980-06-11 | 1980-06-11 | Semiconductor device and manufacturing process therefor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS574139A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4720470A (en) * | 1983-12-15 | 1988-01-19 | Laserpath Corporation | Method of making electrical circuitry |
JPS647426U (en) * | 1987-06-30 | 1989-01-17 | ||
US5963825A (en) * | 1992-08-26 | 1999-10-05 | Hyundai Electronics America | Method of fabrication of semiconductor fuse with polysilicon plate |
US6049056A (en) * | 1996-03-15 | 2000-04-11 | International Business Machines Corporation | Method of laser cutting a metal line on an MR head with a laser |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5228280A (en) * | 1975-08-28 | 1977-03-03 | Toshiba Corp | Semiconductor device |
JPS5380994A (en) * | 1976-12-27 | 1978-07-17 | Toshiba Corp | Lift-off method |
-
1980
- 1980-06-11 JP JP7766180A patent/JPS574139A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5228280A (en) * | 1975-08-28 | 1977-03-03 | Toshiba Corp | Semiconductor device |
JPS5380994A (en) * | 1976-12-27 | 1978-07-17 | Toshiba Corp | Lift-off method |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4720470A (en) * | 1983-12-15 | 1988-01-19 | Laserpath Corporation | Method of making electrical circuitry |
JPS647426U (en) * | 1987-06-30 | 1989-01-17 | ||
US5963825A (en) * | 1992-08-26 | 1999-10-05 | Hyundai Electronics America | Method of fabrication of semiconductor fuse with polysilicon plate |
US6049056A (en) * | 1996-03-15 | 2000-04-11 | International Business Machines Corporation | Method of laser cutting a metal line on an MR head with a laser |
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