JPS56107571A - Semiconductor memory storage device - Google Patents
Semiconductor memory storage deviceInfo
- Publication number
- JPS56107571A JPS56107571A JP960680A JP960680A JPS56107571A JP S56107571 A JPS56107571 A JP S56107571A JP 960680 A JP960680 A JP 960680A JP 960680 A JP960680 A JP 960680A JP S56107571 A JPS56107571 A JP S56107571A
- Authority
- JP
- Japan
- Prior art keywords
- insulating layer
- capacity
- film
- incoming
- error due
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP960680A JPS56107571A (en) | 1980-01-30 | 1980-01-30 | Semiconductor memory storage device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP960680A JPS56107571A (en) | 1980-01-30 | 1980-01-30 | Semiconductor memory storage device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS56107571A true JPS56107571A (en) | 1981-08-26 |
JPH0131308B2 JPH0131308B2 (enrdf_load_stackoverflow) | 1989-06-26 |
Family
ID=11724955
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP960680A Granted JPS56107571A (en) | 1980-01-30 | 1980-01-30 | Semiconductor memory storage device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS56107571A (enrdf_load_stackoverflow) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57176757A (en) * | 1981-04-22 | 1982-10-30 | Nec Corp | Semiconductor device |
JPS58204568A (ja) * | 1982-05-24 | 1983-11-29 | Hitachi Ltd | 半導体装置 |
JPS5928373A (ja) * | 1982-08-09 | 1984-02-15 | Nec Corp | 半導体装置 |
JPS6151965A (ja) * | 1984-08-22 | 1986-03-14 | Nec Corp | 半導体記憶装置 |
JPS6151964A (ja) * | 1984-08-22 | 1986-03-14 | Nec Corp | 半導体装置 |
JPS61170060A (ja) * | 1985-01-23 | 1986-07-31 | Mitsubishi Electric Corp | 半導体メモリ |
JPS63246866A (ja) * | 1987-04-01 | 1988-10-13 | Mitsubishi Electric Corp | 1トランジスタ型ダイナミツクメモリセルの製造方法 |
US5594698A (en) * | 1993-03-17 | 1997-01-14 | Zycad Corporation | Random access memory (RAM) based configurable arrays |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5519820A (en) * | 1978-07-27 | 1980-02-12 | Nec Corp | Semiconductor device |
JPS5670657A (en) * | 1979-11-14 | 1981-06-12 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Semiconductor memory device |
-
1980
- 1980-01-30 JP JP960680A patent/JPS56107571A/ja active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5519820A (en) * | 1978-07-27 | 1980-02-12 | Nec Corp | Semiconductor device |
JPS5670657A (en) * | 1979-11-14 | 1981-06-12 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Semiconductor memory device |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57176757A (en) * | 1981-04-22 | 1982-10-30 | Nec Corp | Semiconductor device |
JPS58204568A (ja) * | 1982-05-24 | 1983-11-29 | Hitachi Ltd | 半導体装置 |
JPS5928373A (ja) * | 1982-08-09 | 1984-02-15 | Nec Corp | 半導体装置 |
JPS6151965A (ja) * | 1984-08-22 | 1986-03-14 | Nec Corp | 半導体記憶装置 |
JPS6151964A (ja) * | 1984-08-22 | 1986-03-14 | Nec Corp | 半導体装置 |
JPS61170060A (ja) * | 1985-01-23 | 1986-07-31 | Mitsubishi Electric Corp | 半導体メモリ |
JPS63246866A (ja) * | 1987-04-01 | 1988-10-13 | Mitsubishi Electric Corp | 1トランジスタ型ダイナミツクメモリセルの製造方法 |
US5594698A (en) * | 1993-03-17 | 1997-01-14 | Zycad Corporation | Random access memory (RAM) based configurable arrays |
Also Published As
Publication number | Publication date |
---|---|
JPH0131308B2 (enrdf_load_stackoverflow) | 1989-06-26 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR860001058B1 (en) | Semiconductor memory device | |
JPS5457875A (en) | Semiconductor nonvolatile memory device | |
JPS56125868A (en) | Thin-film semiconductor device | |
JPS56107571A (en) | Semiconductor memory storage device | |
JPS5690556A (en) | Semiconductor memory storage | |
JPS5718356A (en) | Semiconductor memory storage | |
JPS55151363A (en) | Mos semiconductor device and fabricating method of the same | |
JPS57109367A (en) | Semiconductor memory device | |
JPS5670657A (en) | Semiconductor memory device | |
JPS5565458A (en) | Memory cell | |
JPS5519820A (en) | Semiconductor device | |
JPS54156483A (en) | Non-volatile semiconductor memory device | |
JPS5587491A (en) | Non-volatile semiconductor memory device | |
JPS57104264A (en) | Semiconductor memory cell | |
JPS54138381A (en) | Semiconductor memory device | |
JPS56138946A (en) | Semiconductor device | |
JPS56104461A (en) | Semiconductor memory device | |
JPS5591166A (en) | Semiconductor memory | |
JPS5660052A (en) | Semiconductor memory device | |
JPS6428950A (en) | Semiconductor storage device and manufacture thereof | |
JPS57111880A (en) | Semiconductor storage device | |
JPS6418268A (en) | Semiconductor memory device | |
JPS56104462A (en) | Semiconductor memory device | |
JPS566466A (en) | Charge pumping type memory cell | |
JPS5754375A (en) | Mis semiconductor memeory device |