JPS56107550A - Molecular beam crystal growing process - Google Patents
Molecular beam crystal growing processInfo
- Publication number
- JPS56107550A JPS56107550A JP960580A JP960580A JPS56107550A JP S56107550 A JPS56107550 A JP S56107550A JP 960580 A JP960580 A JP 960580A JP 960580 A JP960580 A JP 960580A JP S56107550 A JPS56107550 A JP S56107550A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- base plate
- impurities
- crystal
- cell
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/42—Gallium arsenide
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP960580A JPS56107550A (en) | 1980-01-30 | 1980-01-30 | Molecular beam crystal growing process |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP960580A JPS56107550A (en) | 1980-01-30 | 1980-01-30 | Molecular beam crystal growing process |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS56107550A true JPS56107550A (en) | 1981-08-26 |
Family
ID=11724930
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP960580A Pending JPS56107550A (en) | 1980-01-30 | 1980-01-30 | Molecular beam crystal growing process |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS56107550A (ja) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6020478A (ja) * | 1983-07-13 | 1985-02-01 | Sanyo Electric Co Ltd | 電池の充電方法 |
JPS60100422A (ja) * | 1983-11-07 | 1985-06-04 | Agency Of Ind Science & Technol | 単結晶薄膜周期構造を形成するためのmbe成長方法 |
JPS60152022A (ja) * | 1984-01-20 | 1985-08-10 | Agency Of Ind Science & Technol | 分子線エピタキシヤル成長装置 |
JPS61270813A (ja) * | 1985-05-24 | 1986-12-01 | Sumitomo Electric Ind Ltd | 分子線エピタキシヤル成長装置 |
JPS6261315A (ja) * | 1985-09-11 | 1987-03-18 | Sharp Corp | 分子線エピタキシ−装置 |
-
1980
- 1980-01-30 JP JP960580A patent/JPS56107550A/ja active Pending
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6020478A (ja) * | 1983-07-13 | 1985-02-01 | Sanyo Electric Co Ltd | 電池の充電方法 |
JPH0587948B2 (ja) * | 1983-07-13 | 1993-12-20 | Sanyo Electric Co | |
JPS60100422A (ja) * | 1983-11-07 | 1985-06-04 | Agency Of Ind Science & Technol | 単結晶薄膜周期構造を形成するためのmbe成長方法 |
JPS60152022A (ja) * | 1984-01-20 | 1985-08-10 | Agency Of Ind Science & Technol | 分子線エピタキシヤル成長装置 |
JPS61270813A (ja) * | 1985-05-24 | 1986-12-01 | Sumitomo Electric Ind Ltd | 分子線エピタキシヤル成長装置 |
JPS6261315A (ja) * | 1985-09-11 | 1987-03-18 | Sharp Corp | 分子線エピタキシ−装置 |
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