GB1515571A - Methods of growing thin epitaxial films on a crystal substrate - Google Patents

Methods of growing thin epitaxial films on a crystal substrate

Info

Publication number
GB1515571A
GB1515571A GB21146/75A GB2114675A GB1515571A GB 1515571 A GB1515571 A GB 1515571A GB 21146/75 A GB21146/75 A GB 21146/75A GB 2114675 A GB2114675 A GB 2114675A GB 1515571 A GB1515571 A GB 1515571A
Authority
GB
United Kingdom
Prior art keywords
gaas
layer
region
molecular
deposited
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB21146/75A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP5859374A external-priority patent/JPS5516451B2/ja
Priority claimed from JP6529974A external-priority patent/JPS5516452B2/ja
Priority claimed from JP6530074A external-priority patent/JPS55901B2/ja
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Publication of GB1515571A publication Critical patent/GB1515571A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02395—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02433—Crystal orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02543—Phosphides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Abstract

1515571 Vacuum depositing semi-conductors MATSUSHITA ELECTRIC INDUSTRIAL CO Ltd 19 May 1975 [23 May 1974 7 June 1974 (2)] 21146/75 Heading C7F [Also in Division H1] In molecular beam epitaxial deposition of a compound semi-conductor the conductivity type or composition of a selected region 22 of the epitaxial layer is caused to differ from that of the remainder 21 of the layer by the selective heating, during deposition, of the region 22 by means of a beam 30 of concentrated energy such as an electron beam or laser beam. In one Example Ge-doped GaAs is epitaxially deposited on a GaAs substrate 2 using molecular beams from respective Ge and GaAs sources. Firstly a uniformly n type layer 20 is deposited on the pre-heated substrate 2 using no concentrated energy beam, but when the beam 30 is scanned across the region 22 during a second deposition stage the Ge deposited in the additionally heated region 22 becomes an acceptor (Ge being an amphoteric dopant in GaAs) and the resulting layer has a p type strip 22 in otherwise n type material 21. In another Example GaP and GaAs sources are used for the molecular beams to deposit a GaAs x P 1-x mixed crystal. When an area of the surface is selectively heated by a beam of concentrated energy the material depositing on the selected area contains a higher concentration of P (i.e. lower value of x) than elsewhere in the layer. An Al molecular beam may additionally be used in this example. Preferred apparatus, temperature conditions, &c., are disclosed for both Examples.
GB21146/75A 1974-05-23 1975-05-19 Methods of growing thin epitaxial films on a crystal substrate Expired GB1515571A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP5859374A JPS5516451B2 (en) 1974-05-23 1974-05-23
JP6529974A JPS5516452B2 (en) 1974-06-07 1974-06-07
JP6530074A JPS55901B2 (en) 1974-06-07 1974-06-07

Publications (1)

Publication Number Publication Date
GB1515571A true GB1515571A (en) 1978-06-28

Family

ID=27296632

Family Applications (1)

Application Number Title Priority Date Filing Date
GB21146/75A Expired GB1515571A (en) 1974-05-23 1975-05-19 Methods of growing thin epitaxial films on a crystal substrate

Country Status (4)

Country Link
CA (1) CA1011885A (en)
DE (1) DE2522921C3 (en)
FR (1) FR2272488B1 (en)
GB (1) GB1515571A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2170043A (en) * 1984-12-07 1986-07-23 Sharp Kk Apparatus for the growth of semiconductor crystals
GB2170822A (en) * 1985-01-31 1986-08-13 Sharp Kk A method for the production of substrates coated with a uniform dispersion of extremely fine granules
GB2190541A (en) * 1986-03-25 1987-11-18 Sharp Kk A method for the production of semiconductor devices
GB2204066A (en) * 1987-04-06 1988-11-02 Philips Electronic Associated A method for manufacturing a semiconductor device having a layered structure
GB2234393A (en) * 1989-07-05 1991-01-30 Sharp Kk Making electroluminescent device by molecular beam epitaxy
CN111415858A (en) * 2020-03-12 2020-07-14 中国科学院长春光学精密机械与物理研究所 Preparation method and application of AlN or AlGaN thin film material

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3126050A1 (en) * 1981-07-02 1983-01-13 Hanno Prof. Dr. 2000 Hamburg Schaumburg Process for preparing monocrystalline or coarsely polycrystalline layers
GB2211210A (en) * 1987-10-16 1989-06-28 Philips Electronic Associated A method of modifying a surface of a body using electromagnetic radiation

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1532425A (en) * 1966-05-23 1968-07-12 Texas Instruments Inc Integrated circuits and their manufacturing processes
US3549432A (en) * 1968-07-15 1970-12-22 Texas Instruments Inc Multilayer microelectronic circuitry techniques
US3751310A (en) * 1971-03-25 1973-08-07 Bell Telephone Labor Inc Germanium doped epitaxial films by the molecular beam method

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2170043A (en) * 1984-12-07 1986-07-23 Sharp Kk Apparatus for the growth of semiconductor crystals
US4693207A (en) * 1984-12-07 1987-09-15 Sharp Kabushiki Kaisha Apparatus for the growth of semiconductor crystals
GB2170822A (en) * 1985-01-31 1986-08-13 Sharp Kk A method for the production of substrates coated with a uniform dispersion of extremely fine granules
US4654229A (en) * 1985-01-31 1987-03-31 Sharp Kabushiki Kaisha Method for the production of substrates with a uniform dispersion of extremely fine granules
GB2170822B (en) * 1985-01-31 1989-06-07 Sharp Kk A method for the production of substrates having a uniform dispersion of ultra fine granules deposited thereon
GB2190541A (en) * 1986-03-25 1987-11-18 Sharp Kk A method for the production of semiconductor devices
US4842679A (en) * 1986-03-25 1989-06-27 Sharp Kabushiki Kaisha Method for the production of semiconductor devices
GB2190541B (en) * 1986-03-25 1989-11-15 Sharp Kk A method for the production of semiconductor devices
GB2204066A (en) * 1987-04-06 1988-11-02 Philips Electronic Associated A method for manufacturing a semiconductor device having a layered structure
GB2234393A (en) * 1989-07-05 1991-01-30 Sharp Kk Making electroluminescent device by molecular beam epitaxy
GB2234393B (en) * 1989-07-05 1993-05-26 Sharp Kk Process for preparing electrominescent device of compound semiconductor
CN111415858A (en) * 2020-03-12 2020-07-14 中国科学院长春光学精密机械与物理研究所 Preparation method and application of AlN or AlGaN thin film material

Also Published As

Publication number Publication date
CA1011885A (en) 1977-06-07
FR2272488B1 (en) 1978-11-10
DE2522921B2 (en) 1979-06-07
FR2272488A1 (en) 1975-12-19
DE2522921A1 (en) 1975-11-27
DE2522921C3 (en) 1983-12-15

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee

Effective date: 19930519