CA1011885A - Molecular beam epitaxy method - Google Patents
Molecular beam epitaxy methodInfo
- Publication number
- CA1011885A CA1011885A CA227,555A CA227555A CA1011885A CA 1011885 A CA1011885 A CA 1011885A CA 227555 A CA227555 A CA 227555A CA 1011885 A CA1011885 A CA 1011885A
- Authority
- CA
- Canada
- Prior art keywords
- molecular beam
- beam epitaxy
- epitaxy method
- molecular
- epitaxy
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02387—Group 13/15 materials
- H01L21/02395—Arsenides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/02433—Crystal orientation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/02543—Phosphides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/02546—Arsenides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02576—N-type
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5859374A JPS5516451B2 (en) | 1974-05-23 | 1974-05-23 | |
JP6529974A JPS5516452B2 (en) | 1974-06-07 | 1974-06-07 | |
JP6530074A JPS55901B2 (en) | 1974-06-07 | 1974-06-07 |
Publications (1)
Publication Number | Publication Date |
---|---|
CA1011885A true CA1011885A (en) | 1977-06-07 |
Family
ID=27296632
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CA227,555A Expired CA1011885A (en) | 1974-05-23 | 1975-05-22 | Molecular beam epitaxy method |
Country Status (4)
Country | Link |
---|---|
CA (1) | CA1011885A (en) |
DE (1) | DE2522921C3 (en) |
FR (1) | FR2272488B1 (en) |
GB (1) | GB1515571A (en) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3126050A1 (en) * | 1981-07-02 | 1983-01-13 | Hanno Prof. Dr. 2000 Hamburg Schaumburg | Process for preparing monocrystalline or coarsely polycrystalline layers |
JPH0669025B2 (en) * | 1984-12-07 | 1994-08-31 | シャープ株式会社 | Semiconductor crystal growth equipment |
JPS61177366A (en) * | 1985-01-31 | 1986-08-09 | Sharp Corp | Production of ultrafine particle dispersed substrate |
JPS62222633A (en) * | 1986-03-25 | 1987-09-30 | Sharp Corp | Manufacture of semiconductor element |
GB2204066A (en) * | 1987-04-06 | 1988-11-02 | Philips Electronic Associated | A method for manufacturing a semiconductor device having a layered structure |
GB2211210A (en) * | 1987-10-16 | 1989-06-28 | Philips Electronic Associated | A method of modifying a surface of a body using electromagnetic radiation |
JP2559492B2 (en) * | 1989-07-05 | 1996-12-04 | シャープ株式会社 | Method for manufacturing compound semiconductor light emitting device |
CN111415858A (en) * | 2020-03-12 | 2020-07-14 | 中国科学院长春光学精密机械与物理研究所 | Preparation method and application of AlN or AlGaN thin film material |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR1532425A (en) * | 1966-05-23 | 1968-07-12 | Texas Instruments Inc | Integrated circuits and their manufacturing processes |
US3549432A (en) * | 1968-07-15 | 1970-12-22 | Texas Instruments Inc | Multilayer microelectronic circuitry techniques |
US3751310A (en) * | 1971-03-25 | 1973-08-07 | Bell Telephone Labor Inc | Germanium doped epitaxial films by the molecular beam method |
-
1975
- 1975-05-19 GB GB21146/75A patent/GB1515571A/en not_active Expired
- 1975-05-22 CA CA227,555A patent/CA1011885A/en not_active Expired
- 1975-05-23 FR FR7516116A patent/FR2272488B1/fr not_active Expired
- 1975-05-23 DE DE2522921A patent/DE2522921C3/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
FR2272488A1 (en) | 1975-12-19 |
FR2272488B1 (en) | 1978-11-10 |
DE2522921B2 (en) | 1979-06-07 |
DE2522921C3 (en) | 1983-12-15 |
DE2522921A1 (en) | 1975-11-27 |
GB1515571A (en) | 1978-06-28 |
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