JPS56105668A - Thick film hybrid ic - Google Patents
Thick film hybrid icInfo
- Publication number
- JPS56105668A JPS56105668A JP783080A JP783080A JPS56105668A JP S56105668 A JPS56105668 A JP S56105668A JP 783080 A JP783080 A JP 783080A JP 783080 A JP783080 A JP 783080A JP S56105668 A JPS56105668 A JP S56105668A
- Authority
- JP
- Japan
- Prior art keywords
- thick film
- heat
- radiating plate
- solder
- resin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Abstract
PURPOSE:To obtain the thick film hybrid integrated circuit in high radiativity by a method wherein heat from a power transistor made a heat generating source is transmitted to a radiating plate through a terminal pin, a thick film conductor and solder, and the heat of a molden resin also is transmitted to the heat-radiating plate. CONSTITUTION:A thick film conducter paste in Ag/Pd system is printed on an alumina substrate 6 to simultaneously form a wiring conductor 7, external connecting terminal 8, land means 9 for connecting the parts mounted and land means 11 for the connection of a metallic heat radiating plate 10. Then, a thick film resistor, a thick film capacitor not shown in the drawings are mounted on those above means and the circuit is covered with a galss coat 13 with the connecting terminal being exposed. Thereafter, the solder paste is print-coated on the land means 9, 11, provided with the electrodes of a base, collector and emitter respectively and the power transistor 5 molded with resin or the like and the heat radiating plate 10 are mounted on the connecting means each to be connection-mounted with the solder 12.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP783080A JPS56105668A (en) | 1980-01-28 | 1980-01-28 | Thick film hybrid ic |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP783080A JPS56105668A (en) | 1980-01-28 | 1980-01-28 | Thick film hybrid ic |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS56105668A true JPS56105668A (en) | 1981-08-22 |
Family
ID=11676506
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP783080A Pending JPS56105668A (en) | 1980-01-28 | 1980-01-28 | Thick film hybrid ic |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS56105668A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0384301A2 (en) * | 1989-02-17 | 1990-08-29 | Nokia Mobile Phones Ltd. | Cooling arrangement for a transistor |
EP0449435A2 (en) * | 1990-03-29 | 1991-10-02 | Nokia Mobile Phones Ltd. | Construction for cooling of a RF power transistor |
-
1980
- 1980-01-28 JP JP783080A patent/JPS56105668A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0384301A2 (en) * | 1989-02-17 | 1990-08-29 | Nokia Mobile Phones Ltd. | Cooling arrangement for a transistor |
US5214309A (en) * | 1989-02-17 | 1993-05-25 | Nokia Mobile Phones Ltd. | Thermally conductive bar cooling arrangement for a transistor |
EP0449435A2 (en) * | 1990-03-29 | 1991-10-02 | Nokia Mobile Phones Ltd. | Construction for cooling of a RF power transistor |
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