JPS56101772A - Darlington transistor - Google Patents

Darlington transistor

Info

Publication number
JPS56101772A
JPS56101772A JP427780A JP427780A JPS56101772A JP S56101772 A JPS56101772 A JP S56101772A JP 427780 A JP427780 A JP 427780A JP 427780 A JP427780 A JP 427780A JP S56101772 A JPS56101772 A JP S56101772A
Authority
JP
Japan
Prior art keywords
region
base
emitter
regions
resistance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP427780A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0157505B2 (enrdf_load_stackoverflow
Inventor
Masami Yamaoka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denso Corp
Original Assignee
NipponDenso Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NipponDenso Co Ltd filed Critical NipponDenso Co Ltd
Priority to JP427780A priority Critical patent/JPS56101772A/ja
Publication of JPS56101772A publication Critical patent/JPS56101772A/ja
Publication of JPH0157505B2 publication Critical patent/JPH0157505B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/641—Combinations of only vertical BJTs
    • H10D84/642—Combinations of non-inverted vertical BJTs of the same conductivity type having different characteristics, e.g. Darlington transistors

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
JP427780A 1980-01-17 1980-01-17 Darlington transistor Granted JPS56101772A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP427780A JPS56101772A (en) 1980-01-17 1980-01-17 Darlington transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP427780A JPS56101772A (en) 1980-01-17 1980-01-17 Darlington transistor

Publications (2)

Publication Number Publication Date
JPS56101772A true JPS56101772A (en) 1981-08-14
JPH0157505B2 JPH0157505B2 (enrdf_load_stackoverflow) 1989-12-06

Family

ID=11580038

Family Applications (1)

Application Number Title Priority Date Filing Date
JP427780A Granted JPS56101772A (en) 1980-01-17 1980-01-17 Darlington transistor

Country Status (1)

Country Link
JP (1) JPS56101772A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1984002427A1 (fr) * 1982-12-06 1984-06-21 Mitsubishi Electric Corp Transistor de puissance

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1984002427A1 (fr) * 1982-12-06 1984-06-21 Mitsubishi Electric Corp Transistor de puissance
US4827322A (en) * 1982-12-06 1989-05-02 Mitsubishi Benki Kabushiki Kaisha Power transistor

Also Published As

Publication number Publication date
JPH0157505B2 (enrdf_load_stackoverflow) 1989-12-06

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