JPS57136346A - Internal wiring for semiconductor ic - Google Patents

Internal wiring for semiconductor ic

Info

Publication number
JPS57136346A
JPS57136346A JP2197281A JP2197281A JPS57136346A JP S57136346 A JPS57136346 A JP S57136346A JP 2197281 A JP2197281 A JP 2197281A JP 2197281 A JP2197281 A JP 2197281A JP S57136346 A JPS57136346 A JP S57136346A
Authority
JP
Japan
Prior art keywords
resistance
layer
film
slits
electromigration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2197281A
Other languages
Japanese (ja)
Other versions
JPH0150104B2 (en
Inventor
Kiyoshi Futagawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP2197281A priority Critical patent/JPS57136346A/en
Publication of JPS57136346A publication Critical patent/JPS57136346A/en
Publication of JPH0150104B2 publication Critical patent/JPH0150104B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To prevent electromigration caused disconnection by a method wherein belts of conductive films of different resistance are piled upon one another and the belt with the lowest resistance is separated into several small parts by slits. CONSTITUTION:A P type duffused layer 2 is formed on an N type Si substrate 1. The layer 2 is covered with an oxide film 3 provided with a window for establishing contact with the diffused layer 3. Through the window, a TiW film 4 difficult to effect electromigration in spite of high layer resistance is sandwiched between an Al film 5 in the form of a belt including a bonding pad 6 apt to effect electromigration in spite of its low layer resistance and the oxide film 3. The Al film 5 is separated into several parts by slits 7. The slits 7 cause a current to flow through parts of higher resistance but there is but a little increase in resistance, and migration is prevented.
JP2197281A 1981-02-17 1981-02-17 Internal wiring for semiconductor ic Granted JPS57136346A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2197281A JPS57136346A (en) 1981-02-17 1981-02-17 Internal wiring for semiconductor ic

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2197281A JPS57136346A (en) 1981-02-17 1981-02-17 Internal wiring for semiconductor ic

Publications (2)

Publication Number Publication Date
JPS57136346A true JPS57136346A (en) 1982-08-23
JPH0150104B2 JPH0150104B2 (en) 1989-10-27

Family

ID=12069945

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2197281A Granted JPS57136346A (en) 1981-02-17 1981-02-17 Internal wiring for semiconductor ic

Country Status (1)

Country Link
JP (1) JPS57136346A (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5397790A (en) * 1977-02-07 1978-08-26 Nec Corp Semiconductor device
JPS53118907A (en) * 1977-03-28 1978-10-17 Nec Corp Auxiliary stand-by unit for time sharing communicating line

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5397790A (en) * 1977-02-07 1978-08-26 Nec Corp Semiconductor device
JPS53118907A (en) * 1977-03-28 1978-10-17 Nec Corp Auxiliary stand-by unit for time sharing communicating line

Also Published As

Publication number Publication date
JPH0150104B2 (en) 1989-10-27

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