JPS56101772A - Darlington transistor - Google Patents

Darlington transistor

Info

Publication number
JPS56101772A
JPS56101772A JP427780A JP427780A JPS56101772A JP S56101772 A JPS56101772 A JP S56101772A JP 427780 A JP427780 A JP 427780A JP 427780 A JP427780 A JP 427780A JP S56101772 A JPS56101772 A JP S56101772A
Authority
JP
Japan
Prior art keywords
region
base
emitter
regions
resistance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP427780A
Other languages
Japanese (ja)
Other versions
JPH0157505B2 (en
Inventor
Masami Yamaoka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denso Corp
Original Assignee
NipponDenso Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NipponDenso Co Ltd filed Critical NipponDenso Co Ltd
Priority to JP427780A priority Critical patent/JPS56101772A/en
Publication of JPS56101772A publication Critical patent/JPS56101772A/en
Publication of JPH0157505B2 publication Critical patent/JPH0157505B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
    • H01L27/0825—Combination of vertical direct transistors of the same conductivity type having different characteristics,(e.g. Darlington transistors)

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To increase a surface resistivity without reducing durability by method wherein, within a region on the surface of a base between emitter and collector regions on the first stage side of a Darlington transistor, a resistance-adjusting region electrically floated is provided, the regsion being provided with a conductive property opposite to that of the base region. CONSTITUTION:A Darlington Tr is composed of an N type Si substrate 1 in a collector region, a base region 2 in a P type diffusing layer, a first emitter region 3 in the N type diffusing layer of the preceding Tr and the second emitter region 4 of the output stage Tr. In order to increase internal resistance between the base and emitter of the preceding stage Tr, a resistance-adjusting region 5 is diffused and formed within base surface regions 22, 23, the region 5 being electrically floated and provided with conductivity opposite to that of the base region. With this constitution, it is possible to practically shorten the width of the base regions 22, 23, increase the surface resistance of the base, and sufficiently extend the interfacing regions, so that the deterioration of the Tr because of a leakage current of the interfacing surface can be prevented, while the durability of the transistor is improved.
JP427780A 1980-01-17 1980-01-17 Darlington transistor Granted JPS56101772A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP427780A JPS56101772A (en) 1980-01-17 1980-01-17 Darlington transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP427780A JPS56101772A (en) 1980-01-17 1980-01-17 Darlington transistor

Publications (2)

Publication Number Publication Date
JPS56101772A true JPS56101772A (en) 1981-08-14
JPH0157505B2 JPH0157505B2 (en) 1989-12-06

Family

ID=11580038

Family Applications (1)

Application Number Title Priority Date Filing Date
JP427780A Granted JPS56101772A (en) 1980-01-17 1980-01-17 Darlington transistor

Country Status (1)

Country Link
JP (1) JPS56101772A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1984002427A1 (en) * 1982-12-06 1984-06-21 Mitsubishi Electric Corp Power transistor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1984002427A1 (en) * 1982-12-06 1984-06-21 Mitsubishi Electric Corp Power transistor
US4827322A (en) * 1982-12-06 1989-05-02 Mitsubishi Benki Kabushiki Kaisha Power transistor

Also Published As

Publication number Publication date
JPH0157505B2 (en) 1989-12-06

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