JPS56101766A - Semiconductor integrated circuit - Google Patents
Semiconductor integrated circuitInfo
- Publication number
- JPS56101766A JPS56101766A JP495780A JP495780A JPS56101766A JP S56101766 A JPS56101766 A JP S56101766A JP 495780 A JP495780 A JP 495780A JP 495780 A JP495780 A JP 495780A JP S56101766 A JPS56101766 A JP S56101766A
- Authority
- JP
- Japan
- Prior art keywords
- type
- region
- regions
- transistor
- parasitic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 230000003071 parasitic effect Effects 0.000 abstract 4
- 230000007257 malfunction Effects 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 230000003321 amplification Effects 0.000 abstract 1
- 230000004888 barrier function Effects 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 238000003199 nucleic acid amplification method Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
- H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
- H01L27/0826—Combination of vertical complementary transistors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Bipolar Transistors (AREA)
- Semiconductor Integrated Circuits (AREA)
- Bipolar Integrated Circuits (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP495780A JPS56101766A (en) | 1980-01-18 | 1980-01-18 | Semiconductor integrated circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP495780A JPS56101766A (en) | 1980-01-18 | 1980-01-18 | Semiconductor integrated circuit |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS56101766A true JPS56101766A (en) | 1981-08-14 |
JPS6231502B2 JPS6231502B2 (ja) | 1987-07-08 |
Family
ID=11598053
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP495780A Granted JPS56101766A (en) | 1980-01-18 | 1980-01-18 | Semiconductor integrated circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS56101766A (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4676450A (en) * | 1984-01-06 | 1987-06-30 | Brunswick Corporation | Quick bail opening system for fishing reel |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4879585A (ja) * | 1972-01-24 | 1973-10-25 | ||
JPS497766A (ja) * | 1972-05-11 | 1974-01-23 | ||
JPS4933557A (ja) * | 1972-07-26 | 1974-03-28 | ||
JPS51123579A (en) * | 1975-04-22 | 1976-10-28 | Toshiba Corp | Semiconductor integrating circuit |
-
1980
- 1980-01-18 JP JP495780A patent/JPS56101766A/ja active Granted
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4879585A (ja) * | 1972-01-24 | 1973-10-25 | ||
JPS497766A (ja) * | 1972-05-11 | 1974-01-23 | ||
JPS4933557A (ja) * | 1972-07-26 | 1974-03-28 | ||
JPS51123579A (en) * | 1975-04-22 | 1976-10-28 | Toshiba Corp | Semiconductor integrating circuit |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4676450A (en) * | 1984-01-06 | 1987-06-30 | Brunswick Corporation | Quick bail opening system for fishing reel |
Also Published As
Publication number | Publication date |
---|---|
JPS6231502B2 (ja) | 1987-07-08 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4117507A (en) | Diode formed in integrated-circuit structure | |
KR920017243A (ko) | 바이폴라 트랜지스터 구조 및 bicmos ic 제조방법 | |
GB1533156A (en) | Semiconductor integrated circuits | |
JPS56101766A (en) | Semiconductor integrated circuit | |
JPS6410658A (en) | Semiconductor device | |
JPS57162365A (en) | Semiconductor device | |
JPS56108255A (en) | Semiconductor integrated circuit | |
JPS56155545A (en) | Semiconductor device | |
GB1496306A (en) | Semiconductor integrated circuit including an epitaxial base type vertical transistor | |
JPS56101767A (en) | Semiconductor integrated circuit | |
JPS5745274A (en) | Semiconductor device | |
JPS5743460A (en) | Semiconductor device | |
JPS5648167A (en) | Semiconductor device | |
JPS5562762A (en) | Semiconductor device | |
JPS57133670A (en) | Structure of lateral transistor | |
JPS55107261A (en) | Semiconductor integrated circuit device | |
JPS56135965A (en) | Semiconductor device | |
JPS5533007A (en) | Semiconductor intergated circuit | |
JPS5750473A (en) | Semiconductor integrated circuit device | |
JPS6431452A (en) | Semiconductor integrated circuit containing current mirror | |
JPS56100460A (en) | Bipolar mos semiconductor device and manufacture thereof | |
JPH0558256B2 (ja) | ||
JPS6393154A (ja) | 半導体装置 | |
JPS5698838A (en) | Integrated circuit for preventing parasitic effect | |
JPS5743454A (en) | Semiconductor device |