JPS56100479A - Manufacture of electric field effect semiconductor device - Google Patents

Manufacture of electric field effect semiconductor device

Info

Publication number
JPS56100479A
JPS56100479A JP188980A JP188980A JPS56100479A JP S56100479 A JPS56100479 A JP S56100479A JP 188980 A JP188980 A JP 188980A JP 188980 A JP188980 A JP 188980A JP S56100479 A JPS56100479 A JP S56100479A
Authority
JP
Japan
Prior art keywords
region
type
film
layer
shaped
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP188980A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6122476B2 (enrdf_load_stackoverflow
Inventor
Junichi Nishizawa
Masafumi Shinpo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Instruments Inc
Semiconductor Research Foundation
Original Assignee
Seiko Instruments Inc
Semiconductor Research Foundation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Instruments Inc, Semiconductor Research Foundation filed Critical Seiko Instruments Inc
Priority to JP188980A priority Critical patent/JPS56100479A/ja
Publication of JPS56100479A publication Critical patent/JPS56100479A/ja
Publication of JPS6122476B2 publication Critical patent/JPS6122476B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/202—FETs having static field-induced regions, e.g. static-induction transistors [SIT] or permeable base transistors [PBT]

Landscapes

  • Junction Field-Effect Transistors (AREA)
JP188980A 1980-01-11 1980-01-11 Manufacture of electric field effect semiconductor device Granted JPS56100479A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP188980A JPS56100479A (en) 1980-01-11 1980-01-11 Manufacture of electric field effect semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP188980A JPS56100479A (en) 1980-01-11 1980-01-11 Manufacture of electric field effect semiconductor device

Publications (2)

Publication Number Publication Date
JPS56100479A true JPS56100479A (en) 1981-08-12
JPS6122476B2 JPS6122476B2 (enrdf_load_stackoverflow) 1986-05-31

Family

ID=11514136

Family Applications (1)

Application Number Title Priority Date Filing Date
JP188980A Granted JPS56100479A (en) 1980-01-11 1980-01-11 Manufacture of electric field effect semiconductor device

Country Status (1)

Country Link
JP (1) JPS56100479A (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62198974U (enrdf_load_stackoverflow) * 1986-06-09 1987-12-18
JPH0574272U (ja) * 1992-03-11 1993-10-12 吉村産業株式会社 釣 元

Also Published As

Publication number Publication date
JPS6122476B2 (enrdf_load_stackoverflow) 1986-05-31

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