JPS5598871A - Static induction transistor - Google Patents

Static induction transistor

Info

Publication number
JPS5598871A
JPS5598871A JP635579A JP635579A JPS5598871A JP S5598871 A JPS5598871 A JP S5598871A JP 635579 A JP635579 A JP 635579A JP 635579 A JP635579 A JP 635579A JP S5598871 A JPS5598871 A JP S5598871A
Authority
JP
Japan
Prior art keywords
electrode
barrier
gate
layer
channel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP635579A
Other languages
English (en)
Other versions
JPH0147024B2 (ja
Inventor
Junichi Nishizawa
Tadahiro Omi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Research Foundation
Original Assignee
Semiconductor Research Foundation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Research Foundation filed Critical Semiconductor Research Foundation
Priority to JP635579A priority Critical patent/JPS5598871A/ja
Publication of JPS5598871A publication Critical patent/JPS5598871A/ja
Priority to US06/369,606 priority patent/US4470059A/en
Publication of JPH0147024B2 publication Critical patent/JPH0147024B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0642—Isolation within the component, i.e. internal isolation
    • H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
    • H01L29/0653—Dielectric regions, e.g. SiO2 regions, air gaps adjoining the input or output region of a field-effect device, e.g. the source or drain region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1066—Gate region of field-effect devices with PN junction gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/7722—Field effect transistors using static field induced regions, e.g. SIT, PBT

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Junction Field-Effect Transistors (AREA)
JP635579A 1979-01-22 1979-01-22 Static induction transistor Granted JPS5598871A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP635579A JPS5598871A (en) 1979-01-22 1979-01-22 Static induction transistor
US06/369,606 US4470059A (en) 1979-01-22 1982-04-19 Gallium arsenide static induction transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP635579A JPS5598871A (en) 1979-01-22 1979-01-22 Static induction transistor

Publications (2)

Publication Number Publication Date
JPS5598871A true JPS5598871A (en) 1980-07-28
JPH0147024B2 JPH0147024B2 (ja) 1989-10-12

Family

ID=11636053

Family Applications (1)

Application Number Title Priority Date Filing Date
JP635579A Granted JPS5598871A (en) 1979-01-22 1979-01-22 Static induction transistor

Country Status (2)

Country Link
US (1) US4470059A (ja)
JP (1) JPS5598871A (ja)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4546375A (en) * 1982-06-24 1985-10-08 Rca Corporation Vertical IGFET with internal gate and method for making same
JPS60253269A (ja) * 1984-05-29 1985-12-13 Meidensha Electric Mfg Co Ltd ゲ−トタ−ンオフサイリスタ
GB2162370B (en) * 1984-07-26 1987-10-28 Japan Res Dev Corp Static induction transistor and integrated circuit comprising such a transistor
FR2569056B1 (fr) * 1984-08-08 1989-03-10 Japan Res Dev Corp Transistor a induction statique du type a injection par effet tunnel et circuit integre comprenant un tel transistor
JPS61121369A (ja) * 1984-11-19 1986-06-09 Fujitsu Ltd 半導体装置
US4774556A (en) * 1985-07-25 1988-09-27 Nippondenso Co., Ltd. Non-volatile semiconductor memory device
IT1202313B (it) * 1985-09-26 1989-02-02 Sgs Microelettronica Spa Dispositivo di potenza a semiconduttore,normaolmente interdetto pe alte tensioni e con ron modulata
US4941026A (en) * 1986-12-05 1990-07-10 General Electric Company Semiconductor devices exhibiting minimum on-resistance
JP2578600B2 (ja) * 1987-04-28 1997-02-05 オリンパス光学工業株式会社 半導体装置
US4835586A (en) * 1987-09-21 1989-05-30 Siliconix Incorporated Dual-gate high density fet
US4811063A (en) * 1987-10-20 1989-03-07 General Motors Corporation JMOS transistor utilizing polysilicon sinks
EP0326077B1 (en) * 1988-01-25 1995-04-12 Kabushiki Kaisha Toshiba Circuit board
JP2538984B2 (ja) * 1988-04-20 1996-10-02 株式会社豊田自動織機製作所 静電誘導形半導体装置
US5060029A (en) * 1989-02-28 1991-10-22 Small Power Communication Systems Research Laboratories Co., Ltd. Step cut type insulated gate SIT having low-resistance electrode and method of manufacturing the same
JPH0766971B2 (ja) * 1989-06-07 1995-07-19 シャープ株式会社 炭化珪素半導体装置
US5889298A (en) * 1993-04-30 1999-03-30 Texas Instruments Incorporated Vertical JFET field effect transistor
US5612547A (en) * 1993-10-18 1997-03-18 Northrop Grumman Corporation Silicon carbide static induction transistor
US5498997A (en) * 1994-12-23 1996-03-12 Schiebold; Cristopher F. Transformerless audio amplifier
US5705830A (en) * 1996-09-05 1998-01-06 Northrop Grumman Corporation Static induction transistors
US5903020A (en) * 1997-06-18 1999-05-11 Northrop Grumman Corporation Silicon carbide static induction transistor structure
US11049948B2 (en) * 2018-06-29 2021-06-29 Solsona Enterprise, Llc Vertical thin film transistor with perforated or comb-gate electrode configuration
GB2622086A (en) * 2022-09-02 2024-03-06 Search For The Next Ltd A novel transistor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5396681A (en) * 1977-02-02 1978-08-24 Handotai Kenkyu Shinkokai Semiconductor ic

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US29971A (en) * 1860-09-11 Cotton-cleaner
JPS53118982A (en) * 1977-03-28 1978-10-17 Seiko Instr & Electronics Ltd Electrostatic induction transistor logic element
US4284997A (en) * 1977-07-07 1981-08-18 Zaidan Hojin Handotai Kenkyu Shinkokai Static induction transistor and its applied devices

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5396681A (en) * 1977-02-02 1978-08-24 Handotai Kenkyu Shinkokai Semiconductor ic

Also Published As

Publication number Publication date
US4470059A (en) 1984-09-04
JPH0147024B2 (ja) 1989-10-12

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