JPS5596638A - Method of coating photo resist on silicon nitride film - Google Patents
Method of coating photo resist on silicon nitride filmInfo
- Publication number
- JPS5596638A JPS5596638A JP466179A JP466179A JPS5596638A JP S5596638 A JPS5596638 A JP S5596638A JP 466179 A JP466179 A JP 466179A JP 466179 A JP466179 A JP 466179A JP S5596638 A JPS5596638 A JP S5596638A
- Authority
- JP
- Japan
- Prior art keywords
- film
- photo resist
- silicon nitride
- nitride film
- coating photo
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
PURPOSE: To improve the adhesion of a photo resist with Si3N4 film by heat treating the film in advance at a temperature higher than 800°C.
CONSTITUTION: When an Si3N4 film is formed in a silicon substrate by a normal pressure CVD process and heat treated then at higher than 800°C in N2 for several hours, the resist is preferably adhered onto the film. Thus, an improper photoetching process is prevented. When a surface treating agent is coated further on the surface, the adhesion of the photo resist with the film can be further increased.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP466179A JPS5596638A (en) | 1979-01-18 | 1979-01-18 | Method of coating photo resist on silicon nitride film |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP466179A JPS5596638A (en) | 1979-01-18 | 1979-01-18 | Method of coating photo resist on silicon nitride film |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5596638A true JPS5596638A (en) | 1980-07-23 |
Family
ID=11590108
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP466179A Pending JPS5596638A (en) | 1979-01-18 | 1979-01-18 | Method of coating photo resist on silicon nitride film |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5596638A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4888142A (en) * | 1985-04-11 | 1989-12-19 | Toshiba Ceramics Co., Ltd. | Process for producing β-form Si3 N4 |
-
1979
- 1979-01-18 JP JP466179A patent/JPS5596638A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4888142A (en) * | 1985-04-11 | 1989-12-19 | Toshiba Ceramics Co., Ltd. | Process for producing β-form Si3 N4 |
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