JPS5596638A - Method of coating photo resist on silicon nitride film - Google Patents

Method of coating photo resist on silicon nitride film

Info

Publication number
JPS5596638A
JPS5596638A JP466179A JP466179A JPS5596638A JP S5596638 A JPS5596638 A JP S5596638A JP 466179 A JP466179 A JP 466179A JP 466179 A JP466179 A JP 466179A JP S5596638 A JPS5596638 A JP S5596638A
Authority
JP
Japan
Prior art keywords
film
photo resist
silicon nitride
nitride film
coating photo
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP466179A
Other languages
Japanese (ja)
Inventor
Shinji Nishiura
Toshio Komori
Takayuki Konuma
Hiroshi Sakai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Priority to JP466179A priority Critical patent/JPS5596638A/en
Publication of JPS5596638A publication Critical patent/JPS5596638A/en
Pending legal-status Critical Current

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  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE: To improve the adhesion of a photo resist with Si3N4 film by heat treating the film in advance at a temperature higher than 800°C.
CONSTITUTION: When an Si3N4 film is formed in a silicon substrate by a normal pressure CVD process and heat treated then at higher than 800°C in N2 for several hours, the resist is preferably adhered onto the film. Thus, an improper photoetching process is prevented. When a surface treating agent is coated further on the surface, the adhesion of the photo resist with the film can be further increased.
COPYRIGHT: (C)1980,JPO&Japio
JP466179A 1979-01-18 1979-01-18 Method of coating photo resist on silicon nitride film Pending JPS5596638A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP466179A JPS5596638A (en) 1979-01-18 1979-01-18 Method of coating photo resist on silicon nitride film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP466179A JPS5596638A (en) 1979-01-18 1979-01-18 Method of coating photo resist on silicon nitride film

Publications (1)

Publication Number Publication Date
JPS5596638A true JPS5596638A (en) 1980-07-23

Family

ID=11590108

Family Applications (1)

Application Number Title Priority Date Filing Date
JP466179A Pending JPS5596638A (en) 1979-01-18 1979-01-18 Method of coating photo resist on silicon nitride film

Country Status (1)

Country Link
JP (1) JPS5596638A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4888142A (en) * 1985-04-11 1989-12-19 Toshiba Ceramics Co., Ltd. Process for producing β-form Si3 N4

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4888142A (en) * 1985-04-11 1989-12-19 Toshiba Ceramics Co., Ltd. Process for producing β-form Si3 N4

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