JPS5588325A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5588325A JPS5588325A JP16268978A JP16268978A JPS5588325A JP S5588325 A JPS5588325 A JP S5588325A JP 16268978 A JP16268978 A JP 16268978A JP 16268978 A JP16268978 A JP 16268978A JP S5588325 A JPS5588325 A JP S5588325A
- Authority
- JP
- Japan
- Prior art keywords
- glass film
- phosphorus glass
- film
- phosphorus
- semiconductor substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 6
- 238000004519 manufacturing process Methods 0.000 title 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 8
- 229910052698 phosphorus Inorganic materials 0.000 abstract 8
- 239000011574 phosphorus Substances 0.000 abstract 8
- 239000011521 glass Substances 0.000 abstract 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 3
- 229910052710 silicon Inorganic materials 0.000 abstract 3
- 239000010703 silicon Substances 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- 238000007747 plating Methods 0.000 abstract 2
- 230000000087 stabilizing effect Effects 0.000 abstract 2
- 239000003153 chemical reaction reagent Substances 0.000 abstract 1
- 230000006866 deterioration Effects 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 230000001681 protective effect Effects 0.000 abstract 1
Landscapes
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16268978A JPS5588325A (en) | 1978-12-27 | 1978-12-27 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16268978A JPS5588325A (en) | 1978-12-27 | 1978-12-27 | Manufacture of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5588325A true JPS5588325A (en) | 1980-07-04 |
| JPS6250974B2 JPS6250974B2 (enrdf_load_stackoverflow) | 1987-10-28 |
Family
ID=15759419
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16268978A Granted JPS5588325A (en) | 1978-12-27 | 1978-12-27 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5588325A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58209122A (ja) * | 1982-05-14 | 1983-12-06 | エヌ・ベ−・フイリツプス・フル−イランペンフアブリケン | 金属または半導体表面に微細に構成した金属パタ−ンを製造する方法 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5371369U (enrdf_load_stackoverflow) * | 1976-11-17 | 1978-06-15 |
-
1978
- 1978-12-27 JP JP16268978A patent/JPS5588325A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5371369U (enrdf_load_stackoverflow) * | 1976-11-17 | 1978-06-15 |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58209122A (ja) * | 1982-05-14 | 1983-12-06 | エヌ・ベ−・フイリツプス・フル−イランペンフアブリケン | 金属または半導体表面に微細に構成した金属パタ−ンを製造する方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6250974B2 (enrdf_load_stackoverflow) | 1987-10-28 |
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