JPS5587429A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5587429A JPS5587429A JP16315778A JP16315778A JPS5587429A JP S5587429 A JPS5587429 A JP S5587429A JP 16315778 A JP16315778 A JP 16315778A JP 16315778 A JP16315778 A JP 16315778A JP S5587429 A JPS5587429 A JP S5587429A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- injecting
- ions
- substrate
- heat treatment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Recrystallisation Techniques (AREA)
- Bipolar Transistors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16315778A JPS5587429A (en) | 1978-12-26 | 1978-12-26 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16315778A JPS5587429A (en) | 1978-12-26 | 1978-12-26 | Manufacture of semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5587429A true JPS5587429A (en) | 1980-07-02 |
JPS6142854B2 JPS6142854B2 (US20100012521A1-20100121-C00001.png) | 1986-09-24 |
Family
ID=15768304
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16315778A Granted JPS5587429A (en) | 1978-12-26 | 1978-12-26 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5587429A (US20100012521A1-20100121-C00001.png) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58209120A (ja) * | 1982-05-31 | 1983-12-06 | Toshiba Corp | 半導体装置の製造方法 |
JPS6095921A (ja) * | 1983-10-31 | 1985-05-29 | Toshiba Corp | 半導体装置の製造方法 |
JPS61142738A (ja) * | 1984-12-17 | 1986-06-30 | Toshiba Corp | 単結晶基体へのイオン注入方法 |
JPH0235715A (ja) * | 1988-07-26 | 1990-02-06 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法 |
JPH02306622A (ja) * | 1989-05-22 | 1990-12-20 | Oki Electric Ind Co Ltd | 半導体装置及びその製造方法 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0217856U (US20100012521A1-20100121-C00001.png) * | 1988-07-22 | 1990-02-06 |
-
1978
- 1978-12-26 JP JP16315778A patent/JPS5587429A/ja active Granted
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58209120A (ja) * | 1982-05-31 | 1983-12-06 | Toshiba Corp | 半導体装置の製造方法 |
JPS6095921A (ja) * | 1983-10-31 | 1985-05-29 | Toshiba Corp | 半導体装置の製造方法 |
JPS61142738A (ja) * | 1984-12-17 | 1986-06-30 | Toshiba Corp | 単結晶基体へのイオン注入方法 |
JPH0235715A (ja) * | 1988-07-26 | 1990-02-06 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法 |
JPH02306622A (ja) * | 1989-05-22 | 1990-12-20 | Oki Electric Ind Co Ltd | 半導体装置及びその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
JPS6142854B2 (US20100012521A1-20100121-C00001.png) | 1986-09-24 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
SE8103147L (sv) | Selektiv implanationsmetod for cmos-p-brunnar | |
JPS54154977A (en) | Semiconductor device and its manufacture | |
JPS5587429A (en) | Manufacture of semiconductor device | |
JPS55105344A (en) | Semiconductor device | |
JPS55165669A (en) | Bipolar-mos device | |
JPS5473585A (en) | Gate turn-off thyristor | |
US3540950A (en) | Methods of manufacturing planar transistors | |
JPS5619653A (en) | Bipolar cmos semiconductor device and manufacture thereof | |
JPS55124238A (en) | Method of fabricating semiconductor device | |
JPS54141596A (en) | Semiconductor device | |
JPS5586182A (en) | Manufacture of semiconductor device | |
JPS54162978A (en) | Manufacture of semicinductor device | |
JPS54152874A (en) | Semiconductor device and its manufacture | |
JPS5538082A (en) | Formation for buried layer of semiconductor device | |
JPS5574181A (en) | Preparing junction type field effect transistor | |
JPS5593269A (en) | Manufacture of semiconductor device | |
JPS5491079A (en) | Manufacture of semiconductor device | |
JPS5544701A (en) | Manufacturing transistor | |
JPS54158889A (en) | Manufacture of semiconductor device | |
JPS5587446A (en) | Manufacture of semiconductor device | |
JPS5568650A (en) | Manufacturing method of semiconductor device | |
JPS55153348A (en) | Manufacture of semiconductor device | |
JPS5516412A (en) | Semiconductor device | |
JPS5472985A (en) | Manufacture of integrated-circuit device | |
JPS5730364A (en) | Manufacture of semiconductor device |