JPS5583238A - Producing semiconductor element - Google Patents

Producing semiconductor element

Info

Publication number
JPS5583238A
JPS5583238A JP15651578A JP15651578A JPS5583238A JP S5583238 A JPS5583238 A JP S5583238A JP 15651578 A JP15651578 A JP 15651578A JP 15651578 A JP15651578 A JP 15651578A JP S5583238 A JPS5583238 A JP S5583238A
Authority
JP
Japan
Prior art keywords
glass
groove
rods
sintering
wafers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15651578A
Other languages
Japanese (ja)
Inventor
Fumio Tobioka
Tetsuo Furukawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP15651578A priority Critical patent/JPS5583238A/en
Publication of JPS5583238A publication Critical patent/JPS5583238A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To provide glass coating by sintering glass powder filled in groove on the main surface of substrate which is held horizontally.
CONSTITUTION: Base 21 made of silica has a pair of support rods 22a, 22b attached with horizontal and parallel arranged rods 22aa..., 22ba... to mount wafers. Electrophoresis is used to deposit glass powder on the surface groove of semiconductor 2. The glass-deposited semiconductors 2 are mounted on the rods with the surfaces facing upward and chraged into a sintering furnace. When they are heated to glass sintering temperatures, uniform glass coated layer 23 is formed in the groove, without allowing undesired glass coating to be deposited on the back of wafers.
COPYRIGHT: (C)1980,JPO&Japio
JP15651578A 1978-12-20 1978-12-20 Producing semiconductor element Pending JPS5583238A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15651578A JPS5583238A (en) 1978-12-20 1978-12-20 Producing semiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15651578A JPS5583238A (en) 1978-12-20 1978-12-20 Producing semiconductor element

Publications (1)

Publication Number Publication Date
JPS5583238A true JPS5583238A (en) 1980-06-23

Family

ID=15629453

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15651578A Pending JPS5583238A (en) 1978-12-20 1978-12-20 Producing semiconductor element

Country Status (1)

Country Link
JP (1) JPS5583238A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4681667A (en) * 1982-12-22 1987-07-21 Nec Corporation Method of producing electrostrictive effect element

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4933912A (en) * 1972-07-31 1974-03-28

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4933912A (en) * 1972-07-31 1974-03-28

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4681667A (en) * 1982-12-22 1987-07-21 Nec Corporation Method of producing electrostrictive effect element

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