JPS54121082A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS54121082A
JPS54121082A JP2895178A JP2895178A JPS54121082A JP S54121082 A JPS54121082 A JP S54121082A JP 2895178 A JP2895178 A JP 2895178A JP 2895178 A JP2895178 A JP 2895178A JP S54121082 A JPS54121082 A JP S54121082A
Authority
JP
Japan
Prior art keywords
film
wiring
substrate
insulator
fusion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2895178A
Other languages
Japanese (ja)
Inventor
Susumu Nakamori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP2895178A priority Critical patent/JPS54121082A/en
Publication of JPS54121082A publication Critical patent/JPS54121082A/en
Pending legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE: To solve the thin film thickness at the bent part which is proper to the evaporation film by coating the electric wiring material on the surface of the semiconductor substrate and then changing the material into the wiring layer through fusion and rehardening.
CONSTITUTION: Insulator 2 is coated on semiconductor substrate 1, and electrode hole is drilled on diffusion region 4 formed within substrate 1 to evaporate the wiring Al film on the entire surface. The Al film is heated up to about 700°C which is higher than the fusing point of Alfor fusion, and then the temperature is lowered less than the fusing point to harden the Al film to from wiring layer 13. Thus, the electrode hole of insulator 2 on substrate 1 is filled up with Al with no disconnection caused to the Al wiring film at the bent part. As a result, the reliability can be enhanced for the simiconductor device.
COPYRIGHT: (C)1979,JPO&Japio
JP2895178A 1978-03-13 1978-03-13 Manufacture of semiconductor device Pending JPS54121082A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2895178A JPS54121082A (en) 1978-03-13 1978-03-13 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2895178A JPS54121082A (en) 1978-03-13 1978-03-13 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS54121082A true JPS54121082A (en) 1979-09-19

Family

ID=12262709

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2895178A Pending JPS54121082A (en) 1978-03-13 1978-03-13 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS54121082A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5810838A (en) * 1981-07-14 1983-01-21 Fujitsu Ltd Manufacture of semiconductor device
JPS5898947A (en) * 1981-12-09 1983-06-13 Nec Corp Manufacture of semiconductor device
JPS58115835A (en) * 1981-12-28 1983-07-09 Fujitsu Ltd Formation of buried wirings of semiconductor device
JPS592352A (en) * 1982-06-28 1984-01-07 Toshiba Corp Manufacture of semiconductor device
JPS6236846A (en) * 1985-06-24 1987-02-17 アメリカ合衆国 Flattening of metal layer

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5810838A (en) * 1981-07-14 1983-01-21 Fujitsu Ltd Manufacture of semiconductor device
JPH0117252B2 (en) * 1981-07-14 1989-03-29 Fujitsu Ltd
JPS5898947A (en) * 1981-12-09 1983-06-13 Nec Corp Manufacture of semiconductor device
JPS58115835A (en) * 1981-12-28 1983-07-09 Fujitsu Ltd Formation of buried wirings of semiconductor device
JPH0440858B2 (en) * 1981-12-28 1992-07-06 Fujitsu Ltd
JPS592352A (en) * 1982-06-28 1984-01-07 Toshiba Corp Manufacture of semiconductor device
JPS6236846A (en) * 1985-06-24 1987-02-17 アメリカ合衆国 Flattening of metal layer

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