JPS54121082A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS54121082A JPS54121082A JP2895178A JP2895178A JPS54121082A JP S54121082 A JPS54121082 A JP S54121082A JP 2895178 A JP2895178 A JP 2895178A JP 2895178 A JP2895178 A JP 2895178A JP S54121082 A JPS54121082 A JP S54121082A
- Authority
- JP
- Japan
- Prior art keywords
- film
- wiring
- substrate
- insulator
- fusion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE: To solve the thin film thickness at the bent part which is proper to the evaporation film by coating the electric wiring material on the surface of the semiconductor substrate and then changing the material into the wiring layer through fusion and rehardening.
CONSTITUTION: Insulator 2 is coated on semiconductor substrate 1, and electrode hole is drilled on diffusion region 4 formed within substrate 1 to evaporate the wiring Al film on the entire surface. The Al film is heated up to about 700°C which is higher than the fusing point of Alfor fusion, and then the temperature is lowered less than the fusing point to harden the Al film to from wiring layer 13. Thus, the electrode hole of insulator 2 on substrate 1 is filled up with Al with no disconnection caused to the Al wiring film at the bent part. As a result, the reliability can be enhanced for the simiconductor device.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2895178A JPS54121082A (en) | 1978-03-13 | 1978-03-13 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2895178A JPS54121082A (en) | 1978-03-13 | 1978-03-13 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS54121082A true JPS54121082A (en) | 1979-09-19 |
Family
ID=12262709
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2895178A Pending JPS54121082A (en) | 1978-03-13 | 1978-03-13 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54121082A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5810838A (en) * | 1981-07-14 | 1983-01-21 | Fujitsu Ltd | Manufacture of semiconductor device |
JPS5898947A (en) * | 1981-12-09 | 1983-06-13 | Nec Corp | Manufacture of semiconductor device |
JPS58115835A (en) * | 1981-12-28 | 1983-07-09 | Fujitsu Ltd | Formation of buried wirings of semiconductor device |
JPS592352A (en) * | 1982-06-28 | 1984-01-07 | Toshiba Corp | Manufacture of semiconductor device |
JPS6236846A (en) * | 1985-06-24 | 1987-02-17 | アメリカ合衆国 | Flattening of metal layer |
-
1978
- 1978-03-13 JP JP2895178A patent/JPS54121082A/en active Pending
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5810838A (en) * | 1981-07-14 | 1983-01-21 | Fujitsu Ltd | Manufacture of semiconductor device |
JPH0117252B2 (en) * | 1981-07-14 | 1989-03-29 | Fujitsu Ltd | |
JPS5898947A (en) * | 1981-12-09 | 1983-06-13 | Nec Corp | Manufacture of semiconductor device |
JPS58115835A (en) * | 1981-12-28 | 1983-07-09 | Fujitsu Ltd | Formation of buried wirings of semiconductor device |
JPH0440858B2 (en) * | 1981-12-28 | 1992-07-06 | Fujitsu Ltd | |
JPS592352A (en) * | 1982-06-28 | 1984-01-07 | Toshiba Corp | Manufacture of semiconductor device |
JPS6236846A (en) * | 1985-06-24 | 1987-02-17 | アメリカ合衆国 | Flattening of metal layer |
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