JPS5578565A - Semiconductor memory device - Google Patents

Semiconductor memory device

Info

Publication number
JPS5578565A
JPS5578565A JP15280978A JP15280978A JPS5578565A JP S5578565 A JPS5578565 A JP S5578565A JP 15280978 A JP15280978 A JP 15280978A JP 15280978 A JP15280978 A JP 15280978A JP S5578565 A JPS5578565 A JP S5578565A
Authority
JP
Japan
Prior art keywords
regions
substrate
grooves
semiconductor layer
semiconductor layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15280978A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6136712B2 (enrdf_load_stackoverflow
Inventor
Yoshiiku Togei
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP15280978A priority Critical patent/JPS5578565A/ja
Publication of JPS5578565A publication Critical patent/JPS5578565A/ja
Publication of JPS6136712B2 publication Critical patent/JPS6136712B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B12/00Dynamic random access memory [DRAM] devices
    • H10B12/30DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/37DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
JP15280978A 1978-12-09 1978-12-09 Semiconductor memory device Granted JPS5578565A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15280978A JPS5578565A (en) 1978-12-09 1978-12-09 Semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15280978A JPS5578565A (en) 1978-12-09 1978-12-09 Semiconductor memory device

Publications (2)

Publication Number Publication Date
JPS5578565A true JPS5578565A (en) 1980-06-13
JPS6136712B2 JPS6136712B2 (enrdf_load_stackoverflow) 1986-08-20

Family

ID=15548619

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15280978A Granted JPS5578565A (en) 1978-12-09 1978-12-09 Semiconductor memory device

Country Status (1)

Country Link
JP (1) JPS5578565A (enrdf_load_stackoverflow)

Also Published As

Publication number Publication date
JPS6136712B2 (enrdf_load_stackoverflow) 1986-08-20

Similar Documents

Publication Publication Date Title
KR840006873A (ko) 반도체 메모리
JPS6450554A (en) Manufacture of complementary semiconductor device
JPS52102690A (en) Semiconductor capacitance device
KR960024604A (ko) 이중 채널 박막트랜지스터 및 그 제조방법
KR950034731A (ko) 비휘발성 반도체 메모리장치의 제조방법
KR970003831A (ko) 필드 산화물에 의해 절연된 다른 전도형 반도체 영역을 가진 반도체 장치 및 그 제조 방법
JPS56162875A (en) Semiconductor device
JPS5578577A (en) Method of fabricating field effect transistor utilizing one conductivity semiconductor substrate
KR960012520A (ko) 과소거 동작 보상용으로서 측벽 분할 게이트를 갖는 비휘발성 반도체 장치
JPS5578565A (en) Semiconductor memory device
JPS6489560A (en) Semiconductor memory
JPS5623781A (en) Semiconductor device
JPS54136141A (en) Magnetic bubble memory element and its manufacture
JPS5375877A (en) Vertical type micro mos transistor
JPS5683075A (en) Insulating gate type field-effect transistor circuit device
JPS5574174A (en) Interpolation type insulating gate field effect transistor
JPS5670662A (en) Insulated gate type field effect transistor
KR960006032A (ko) 트랜지스터 및 그 제조방법
JPS57160164A (en) Nonvolatile semiconductor memory
JPS57114287A (en) Semiconductor device
JPS5339088A (en) Insulated gate type field effect semiconductor device
JPS5270768A (en) Semiconductor device
JPS52149988A (en) Semiconductor device
JPS6457671A (en) Semiconductor device and manufacture thereof
JPS53138684A (en) Semiconductor memory device