JPS557562A - Vapor phase growth apparatus for multicomponent semiconductor crystal - Google Patents

Vapor phase growth apparatus for multicomponent semiconductor crystal

Info

Publication number
JPS557562A
JPS557562A JP8027578A JP8027578A JPS557562A JP S557562 A JPS557562 A JP S557562A JP 8027578 A JP8027578 A JP 8027578A JP 8027578 A JP8027578 A JP 8027578A JP S557562 A JPS557562 A JP S557562A
Authority
JP
Japan
Prior art keywords
temperature
tube
sealed tube
tubes
temperature distribution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8027578A
Other languages
Japanese (ja)
Other versions
JPS5858320B2 (en
Inventor
Michiharu Ito
Koji Shinohara
Mitsuo Yoshikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP8027578A priority Critical patent/JPS5858320B2/en
Publication of JPS557562A publication Critical patent/JPS557562A/en
Publication of JPS5858320B2 publication Critical patent/JPS5858320B2/en
Expired legal-status Critical Current

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  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To enable the temperature distribution of crystal growth process to be measured in a state of a sealed tube actually placed in the titled apparatus, by arranging a specified temperature detector inserted tubes around the sealed tube containing the raw material of the titled crystals.
CONSTITUTION: Sealed tube 1 containing raw material 5 of PbTe, PbS, or the like is placed in outer tube 3, and smaller quartz tubes 2 are arranged near the outside circumference of sealed tube 1, and a temperature detectors, such as thermocouples, are inserted in tubes 2. Spacer 4 is arranged and in this central hole a temperature detector is inserted to measure the temperature distribution while tube 1 is being moved from position A to B. Since the temperature distribution of tube 1 actually containing the material can be measured, the actual temperature change outline in crystal growth process is observed, permitting temperature control capable of obtaining uniform high quality crystals of small dispersion to be made.
COPYRIGHT: (C)1980,JPO&Japio
JP8027578A 1978-06-30 1978-06-30 Vapor phase growth equipment for multi-component semiconductor crystals Expired JPS5858320B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8027578A JPS5858320B2 (en) 1978-06-30 1978-06-30 Vapor phase growth equipment for multi-component semiconductor crystals

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8027578A JPS5858320B2 (en) 1978-06-30 1978-06-30 Vapor phase growth equipment for multi-component semiconductor crystals

Publications (2)

Publication Number Publication Date
JPS557562A true JPS557562A (en) 1980-01-19
JPS5858320B2 JPS5858320B2 (en) 1983-12-24

Family

ID=13713716

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8027578A Expired JPS5858320B2 (en) 1978-06-30 1978-06-30 Vapor phase growth equipment for multi-component semiconductor crystals

Country Status (1)

Country Link
JP (1) JPS5858320B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0296727A2 (en) 1987-06-24 1988-12-28 Asahi Kasei Kogyo Kabushiki Kaisha Light shielding screen structure and a process for producing the same
US4820021A (en) * 1984-03-19 1989-04-11 Asahi Kasei Kogyo Kabushiki Kaisha Light-shielding screen and a process for producing the same

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4820021A (en) * 1984-03-19 1989-04-11 Asahi Kasei Kogyo Kabushiki Kaisha Light-shielding screen and a process for producing the same
EP0296727A2 (en) 1987-06-24 1988-12-28 Asahi Kasei Kogyo Kabushiki Kaisha Light shielding screen structure and a process for producing the same
US4877308A (en) * 1987-06-24 1989-10-31 Asahi Kasei Kogyo Kabushiki Kaisha Light shielding screen structure and a process for producing the same

Also Published As

Publication number Publication date
JPS5858320B2 (en) 1983-12-24

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