JPS557562A - Vapor phase growth apparatus for multicomponent semiconductor crystal - Google Patents
Vapor phase growth apparatus for multicomponent semiconductor crystalInfo
- Publication number
- JPS557562A JPS557562A JP8027578A JP8027578A JPS557562A JP S557562 A JPS557562 A JP S557562A JP 8027578 A JP8027578 A JP 8027578A JP 8027578 A JP8027578 A JP 8027578A JP S557562 A JPS557562 A JP S557562A
- Authority
- JP
- Japan
- Prior art keywords
- temperature
- tube
- sealed tube
- tubes
- temperature distribution
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE: To enable the temperature distribution of crystal growth process to be measured in a state of a sealed tube actually placed in the titled apparatus, by arranging a specified temperature detector inserted tubes around the sealed tube containing the raw material of the titled crystals.
CONSTITUTION: Sealed tube 1 containing raw material 5 of PbTe, PbS, or the like is placed in outer tube 3, and smaller quartz tubes 2 are arranged near the outside circumference of sealed tube 1, and a temperature detectors, such as thermocouples, are inserted in tubes 2. Spacer 4 is arranged and in this central hole a temperature detector is inserted to measure the temperature distribution while tube 1 is being moved from position A to B. Since the temperature distribution of tube 1 actually containing the material can be measured, the actual temperature change outline in crystal growth process is observed, permitting temperature control capable of obtaining uniform high quality crystals of small dispersion to be made.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8027578A JPS5858320B2 (en) | 1978-06-30 | 1978-06-30 | Vapor phase growth equipment for multi-component semiconductor crystals |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8027578A JPS5858320B2 (en) | 1978-06-30 | 1978-06-30 | Vapor phase growth equipment for multi-component semiconductor crystals |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS557562A true JPS557562A (en) | 1980-01-19 |
JPS5858320B2 JPS5858320B2 (en) | 1983-12-24 |
Family
ID=13713716
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8027578A Expired JPS5858320B2 (en) | 1978-06-30 | 1978-06-30 | Vapor phase growth equipment for multi-component semiconductor crystals |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5858320B2 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0296727A2 (en) | 1987-06-24 | 1988-12-28 | Asahi Kasei Kogyo Kabushiki Kaisha | Light shielding screen structure and a process for producing the same |
US4820021A (en) * | 1984-03-19 | 1989-04-11 | Asahi Kasei Kogyo Kabushiki Kaisha | Light-shielding screen and a process for producing the same |
-
1978
- 1978-06-30 JP JP8027578A patent/JPS5858320B2/en not_active Expired
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4820021A (en) * | 1984-03-19 | 1989-04-11 | Asahi Kasei Kogyo Kabushiki Kaisha | Light-shielding screen and a process for producing the same |
EP0296727A2 (en) | 1987-06-24 | 1988-12-28 | Asahi Kasei Kogyo Kabushiki Kaisha | Light shielding screen structure and a process for producing the same |
US4877308A (en) * | 1987-06-24 | 1989-10-31 | Asahi Kasei Kogyo Kabushiki Kaisha | Light shielding screen structure and a process for producing the same |
Also Published As
Publication number | Publication date |
---|---|
JPS5858320B2 (en) | 1983-12-24 |
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