JPS6476991A - Production device for semiconductor crystal - Google Patents
Production device for semiconductor crystalInfo
- Publication number
- JPS6476991A JPS6476991A JP23208987A JP23208987A JPS6476991A JP S6476991 A JPS6476991 A JP S6476991A JP 23208987 A JP23208987 A JP 23208987A JP 23208987 A JP23208987 A JP 23208987A JP S6476991 A JPS6476991 A JP S6476991A
- Authority
- JP
- Japan
- Prior art keywords
- crucible
- crystal
- semiconductor
- production device
- melt
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE:To improve instability of temperature control, to contrive to reduce change of crystal temperature and to stably grow high-quality crystal, by making a crucible of a production device for semiconductor device, comprising a multiple structure consisting of an inner crucible and an outer crucible made of specific different materials. CONSTITUTION:An inner crucible 2 is made of a material such as PBN or quartz not to be reacted with semiconductor melt 14, an outer crucible 13 is formed from a material such as an opaque ceramic material (e.g. Al3N4) or high-purity BN 12 to screen infrared rays and optionally the outer crucible 13 is doubly or triply set around the outer periphery of the inner crucible 12 to constitute a multiple crucible 11 of a production device of semiconductor crystal. Crystal 15 is grown from melt 14 of a compound semiconductor in the multiple crucible 11 set in the interior of a crucible supporting member 18 held by a crucible supporting shaft 19 through a pulling shaft 17.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23208987A JPS6476991A (en) | 1987-09-18 | 1987-09-18 | Production device for semiconductor crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23208987A JPS6476991A (en) | 1987-09-18 | 1987-09-18 | Production device for semiconductor crystal |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6476991A true JPS6476991A (en) | 1989-03-23 |
Family
ID=16933827
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23208987A Pending JPS6476991A (en) | 1987-09-18 | 1987-09-18 | Production device for semiconductor crystal |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6476991A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2742257A1 (en) * | 1995-12-12 | 1997-06-13 | Comurhex | PROCESS FOR THE ENHANCEMENT, IN THE FORM OF NITRIC ACID, OF NITRATE IONS CONTAINED IN THE EFFLUENTS OF THE NUCLEAR INDUSTRY |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59213697A (en) * | 1983-05-20 | 1984-12-03 | Toshiba Ceramics Co Ltd | Pulling device for single crystal semiconductor |
-
1987
- 1987-09-18 JP JP23208987A patent/JPS6476991A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59213697A (en) * | 1983-05-20 | 1984-12-03 | Toshiba Ceramics Co Ltd | Pulling device for single crystal semiconductor |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2742257A1 (en) * | 1995-12-12 | 1997-06-13 | Comurhex | PROCESS FOR THE ENHANCEMENT, IN THE FORM OF NITRIC ACID, OF NITRATE IONS CONTAINED IN THE EFFLUENTS OF THE NUCLEAR INDUSTRY |
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