KR950024974A - Piezoelectric element and laser oscillator material (La3Ga5SiO14) material and its manufacturing method - Google Patents

Piezoelectric element and laser oscillator material (La3Ga5SiO14) material and its manufacturing method Download PDF

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KR950024974A
KR950024974A KR1019940002789A KR19940002789A KR950024974A KR 950024974 A KR950024974 A KR 950024974A KR 1019940002789 A KR1019940002789 A KR 1019940002789A KR 19940002789 A KR19940002789 A KR 19940002789A KR 950024974 A KR950024974 A KR 950024974A
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sio
materials
single crystal
manufacturing
grown
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KR1019940002789A
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KR970007336B1 (en
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장영남
배인국
채수천
김문영
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김동학
한국자원연구소
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

압전소재 및 레이저용 소재로 쓰일 수 있는 물질 La3Ga5SiO14(일명 LGS)과 그의 단결정제조법에 관한 것으로서 제조 방법은 우선, La2O3, Ga2O3, SiO2, Nd2O3, CaO, SrO, GeO2, 등의 3N 이상의 고순도 출발물질을 3:5:2 혹은 3:1:4의 비율로 각각 평량하고 이를 혼합하여 도가니에 넣고 1000-1400℃에서 5-20시간 동안어니어링(annealing) 반응을 통해 균질한 조성의 물질인 La3Ga5SiO14, Nd3Ga5SiO14, Ca3Ga2Ge4O14등의 순수한 물질을 합성한다. 상기한 물질들은 모두 결정구조학적으로 트라이고날(trigonal)시스템 (공간군:P321)에 속하며 이중 CGG 및 SGG 는 LGS결정 구조가 다소 왜곡되어 단사정계에 속하는 것으로 판단되는 물질류이다.Materials that can be used for piezoelectric materials and laser materials La 3 Ga 5 SiO 14 (aka LGS) and its single crystal manufacturing method, the manufacturing method is first La 2 O 3 , Ga 2 O 3 , SiO 2 , Nd 2 O 3 3N or higher high purity starting materials such as CaO, SrO, GeO 2 , etc. in a ratio of 3: 5: 2 or 3: 1: 4, respectively, were weighed and mixed into a crucible for 5-20 hours at 1000-1400 ° C. Through annealing reaction, pure materials such as La 3 Ga 5 SiO 14 , Nd 3 Ga 5 SiO 14 , and Ca 3 Ga 2 Ge 4 O 14 , which are homogeneous compositions, are synthesized. The above-mentioned materials are all crystallographically belong to the trigonal system (space group: P321), and among them, CGG and SGG are materials that are considered to belong to the monoclinic system because the LGS crystal structure is somewhat distorted.

위와같이 합성된 물질들은 각기 적절한 가열방식에 의해 용융된 용액으로 부터 회전 및 인상시키면서 성장시킨다. 회전 속도는 로의 온도 분포에 따라 20-40rpm으로 변화가 가능하며 인상속도는 0.5mm/hr1.0mm/hr 로 사용목적에 따라 변화하면 된다. 종자결정을 상부 사프트에 매달고 용액과 접촉시킨후 직경이 일정하도록 다이아미터오토콘트롤 프로그램과 무게 센서를 이용하여 웨이퍼화 하기 쉽도록 모양의 단결정으로 성장시킨 것을 특징으로 하는 압전소자용 및 레이져 발진자용 소재(La3Ga5SiO14류) 물질과 이의 단결정 제조법.The synthesized materials are grown while rotating and pulling from the molten solution by the appropriate heating method. Rotating speed can be changed to 20-40rpm according to the temperature distribution of the furnace and pulling speed is 0.5mm / hr1.0mm / hr depending on the purpose of use. The seed crystals are suspended on the upper shaft and contacted with a solution, and then grown in a single crystal shaped to be easily wafered using a diameter auto control program and a weight sensor so that the diameter is constant. Piezoelectric element and laser oscillator material (La 3 Ga 5 SiO 14 ) material and its single crystal preparation method.

Description

압전소자용 및 레이져 발진자용 소재(La3Ga5SiO14류) 물질과 이의 단결성 제조법Piezoelectric element and laser oscillator material (La3Ga5SiO14) material and its manufacturing method

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1도는 본 발명의 원료분말 제조 공정도,1 is a process for producing a raw material powder of the present invention,

제2도는 인상법에 의한 단결정 제조 공정도,2 is a single crystal manufacturing process drawing by the pulling method,

제3도는 직격 자동제어 시스템 공정도.3 is a process diagram of a direct automatic control system.

Claims (2)

1) La3Ga5SiO14, 2) Nd3Ga5SiO14, 3) Ca3Ga2Ge4O14, 4) Sr3Ga3Ge4O14, 5) La3Ga5Ge O14, 6) (1-X) Ca3Ga2Ge4O14-X Nd3Ga5GeO14고용체, 7) (1-X) Sr3Ga2Ge4O14- X Nd3Ga5GeO14고용체, 이 패밀리에 속하는 모든 화합물들은 삼방정계에 속하며 동일한 결정구조를 나타내지만 이들중 Ge-화합물들은 결정 구조가 왜곡되어 단사정계에 속하는 것도 있음을 포함하는 압전 소자용 및 레이져 발진 자용 소재(La3Ga5SiO14류)물질.1) La 3 Ga 5 SiO 14 , 2) Nd 3 Ga 5 SiO 14 , 3) Ca 3 Ga 2 Ge 4 O 14 , 4) Sr 3 Ga 3 Ge 4 O 14 , 5) La 3 Ga 5 Ge O 14 , 6) (1-X) Ca 3 Ga 2 Ge 4 O 14 -X Nd 3 Ga 5 GeO 14 solid solution, 7) (1-X) Sr 3 Ga 2 Ge 4 O 14 -X Nd 3 Ga 5 GeO 14 solid solution, All compounds belonging to this family belong to the trigonal system and exhibit the same crystal structure, but among these, Ge-compounds are used for piezoelectric elements and laser oscillator materials (La 3 Ga 5 ), which include the crystal structure being distorted and belonging to the monoclinic system. SiO 14 class) material. 우선 3:5:2 혹은 3:1:4의 비율로 La2O3, Ga2O3, SiO2, Nd2O3, CaO, SrO 등의 이성분계 화합물들로 부터 4성분계에 혹은 위의 고용체 화합물을 합성한후 용융시켜 초크랄스키법에 의해 회전, 인상시키면서 단결정으로 육성하는 것을 특징으로 하는 압전소자용 및 레이져 발진자용 소재(La3Ga5SiO14류)물질과 이의 단결정 제조법.Priority 3: 5: 2 or 3: 1 at a rate of 4 from the two-component compound such as La 2 O 3, Ga 2 O 3, SiO 2, Nd 2 O 3, CaO, SrO in the four-component system or above A material for piezoelectric elements and laser oscillators (La 3 Ga 5 SiO 14 ) and a method for producing single crystals, characterized in that the solid solution compound is synthesized, melted, and grown into a single crystal while being rotated and stretched by the Czochralski method. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019940002789A 1994-02-17 1994-02-17 Process for the preparation of single crystal for radioelectronics and piezotechnology KR970007336B1 (en)

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KR1019940002789A KR970007336B1 (en) 1994-02-17 1994-02-17 Process for the preparation of single crystal for radioelectronics and piezotechnology

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KR1019940002789A KR970007336B1 (en) 1994-02-17 1994-02-17 Process for the preparation of single crystal for radioelectronics and piezotechnology

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KR950024974A true KR950024974A (en) 1995-09-15
KR970007336B1 KR970007336B1 (en) 1997-05-07

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