JPS56104795A - Device for pulling up crystal - Google Patents

Device for pulling up crystal

Info

Publication number
JPS56104795A
JPS56104795A JP857680A JP857680A JPS56104795A JP S56104795 A JPS56104795 A JP S56104795A JP 857680 A JP857680 A JP 857680A JP 857680 A JP857680 A JP 857680A JP S56104795 A JPS56104795 A JP S56104795A
Authority
JP
Japan
Prior art keywords
vessel
heating
single crystal
pulling
heating elements
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP857680A
Other languages
Japanese (ja)
Other versions
JPS6121195B2 (en
Inventor
Toshihiko Suzuki
Nobuyuki Izawa
Kinji Hoshi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP857680A priority Critical patent/JPS56104795A/en
Priority to GB8029356A priority patent/GB2059932B/en
Priority to FR8019942A priority patent/FR2465802B1/en
Priority to DE19803035267 priority patent/DE3035267A1/en
Priority to CA000360638A priority patent/CA1177367A/en
Priority to NL8005228A priority patent/NL8005228A/en
Priority to SU2992247A priority patent/SU1258329A3/en
Priority to IT24803/80A priority patent/IT1141064B/en
Priority to SE8006569A priority patent/SE8006569L/en
Priority to AT0473180A priority patent/AT398582B/en
Publication of JPS56104795A publication Critical patent/JPS56104795A/en
Priority to US06/339,065 priority patent/US4619730A/en
Priority to US06/562,015 priority patent/US4622211A/en
Publication of JPS6121195B2 publication Critical patent/JPS6121195B2/ja
Granted legal-status Critical Current

Links

Abstract

PURPOSE: When a single crystal is formed by the pulling-up method under application of magnetic field, a plurality of heaters are used as a heating means and each of them is controlled independently to form a single crystal of really round cross section and good quality without rotation of the single cyrstal pulled up.
CONSTITUTION: In a device for pulling up a single crystal that is composed of a vessel 2 including a melted liquid to be crystallized such as melted silicon 3, a heating means 4, jacket 6 and a means for generating a direct current magnetic field 7 which are fitted outside the vessel 2, the heating means 4 contains a plurality of heating elements 51, 52,...58, which are arranged at an equal interval on the circumference around the axis of the vessel 2. In the meantime, thermocouples 11W 18 are provided on the positions corresponding to the above heating elements 51W 58 respectively in the vessel 2. Each thermocouple detects a temperature and the current to each heating element is controlled according to the detected temperature so that the center of heating by these heating elements always comes on the center axis of the vessel when a single crystal is grown by pulling up.
COPYRIGHT: (C)1981,JPO&Japio
JP857680A 1979-09-20 1980-01-28 Device for pulling up crystal Granted JPS56104795A (en)

Priority Applications (12)

Application Number Priority Date Filing Date Title
JP857680A JPS56104795A (en) 1980-01-28 1980-01-28 Device for pulling up crystal
GB8029356A GB2059932B (en) 1979-09-20 1980-09-11 Solidification processes
FR8019942A FR2465802B1 (en) 1979-09-20 1980-09-16 PROCESS FOR SOLIDIFYING A FLUID SUCH AS A SILICON BATH AND PROCESS OBTAINED
DE19803035267 DE3035267A1 (en) 1979-09-20 1980-09-18 METHOD FOR STRENGTHENING LIQUID MATERIALS
IT24803/80A IT1141064B (en) 1979-09-20 1980-09-19 SOLIDIFICATION PROCESS
NL8005228A NL8005228A (en) 1979-09-20 1980-09-19 METHOD FOR PROCESSING THE TRANSITION IN FIXED STATE.
SU2992247A SU1258329A3 (en) 1979-09-20 1980-09-19 Method of growing silicon crystals
CA000360638A CA1177367A (en) 1979-09-20 1980-09-19 Process for solidification
SE8006569A SE8006569L (en) 1979-09-20 1980-09-19 STELNINGSFORFARANDE
AT0473180A AT398582B (en) 1979-09-20 1980-09-22 CRYSTAL GROWING METHOD
US06/339,065 US4619730A (en) 1979-09-20 1982-01-13 Process for solidification in a magnetic field with a D.C. heater
US06/562,015 US4622211A (en) 1979-09-20 1983-12-16 Apparatus for solidification with resistance heater and magnets

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP857680A JPS56104795A (en) 1980-01-28 1980-01-28 Device for pulling up crystal

Publications (2)

Publication Number Publication Date
JPS56104795A true JPS56104795A (en) 1981-08-20
JPS6121195B2 JPS6121195B2 (en) 1986-05-26

Family

ID=11696852

Family Applications (1)

Application Number Title Priority Date Filing Date
JP857680A Granted JPS56104795A (en) 1979-09-20 1980-01-28 Device for pulling up crystal

Country Status (1)

Country Link
JP (1) JPS56104795A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5983977U (en) * 1982-11-26 1984-06-06 日本電信電話株式会社 crystal manufacturing equipment
JPS6470998A (en) * 1987-09-10 1989-03-16 Nec Corp Decision circuit for use of redundant memory cell

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53113339A (en) * 1977-03-14 1978-10-03 Kokusai Electric Co Ltd Heater for fusing semiconductor or metal
JPS5480284A (en) * 1977-12-01 1979-06-26 Wacker Chemitronic Method of manufacturing high purity semiconductor material and high purity metal

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53113339A (en) * 1977-03-14 1978-10-03 Kokusai Electric Co Ltd Heater for fusing semiconductor or metal
JPS5480284A (en) * 1977-12-01 1979-06-26 Wacker Chemitronic Method of manufacturing high purity semiconductor material and high purity metal

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5983977U (en) * 1982-11-26 1984-06-06 日本電信電話株式会社 crystal manufacturing equipment
JPS6470998A (en) * 1987-09-10 1989-03-16 Nec Corp Decision circuit for use of redundant memory cell

Also Published As

Publication number Publication date
JPS6121195B2 (en) 1986-05-26

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