JPS5575268A - Manufacturing method of nonvolatile semiconductor memory - Google Patents
Manufacturing method of nonvolatile semiconductor memoryInfo
- Publication number
- JPS5575268A JPS5575268A JP15032878A JP15032878A JPS5575268A JP S5575268 A JPS5575268 A JP S5575268A JP 15032878 A JP15032878 A JP 15032878A JP 15032878 A JP15032878 A JP 15032878A JP S5575268 A JPS5575268 A JP S5575268A
- Authority
- JP
- Japan
- Prior art keywords
- film
- grains
- electrons
- capturing
- centers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 6
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 3
- 229910052681 coesite Inorganic materials 0.000 abstract 3
- 229910052906 cristobalite Inorganic materials 0.000 abstract 3
- 239000000377 silicon dioxide Substances 0.000 abstract 3
- 235000012239 silicon dioxide Nutrition 0.000 abstract 3
- 229910052682 stishovite Inorganic materials 0.000 abstract 3
- 229910052905 tridymite Inorganic materials 0.000 abstract 3
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 229910052801 chlorine Inorganic materials 0.000 abstract 1
- 239000000460 chlorine Substances 0.000 abstract 1
- 230000005684 electric field Effects 0.000 abstract 1
- 238000010030 laminating Methods 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 abstract 1
- 229910052721 tungsten Inorganic materials 0.000 abstract 1
- 239000010937 tungsten Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
Abstract
PURPOSE:To improve the characteristics of a nonvolatile memory, by causing very fine grains of a metal to adhere to the surface of a dielectric layer provided on a semiconductor and thereafter laminating an impurity-added dielectric layer on the grains. CONSTITUTION:An SiO2 film is produced on a metal-oxide-semiconductor gate manufacturing part of a p-type silicon substrate. Very fine grains of tungsten are evaporated as centers for capturing electrons or positive holes, no the entire surface of the SiO2 film. An Si3N4 film is coated on the grains. Since capturing centers present in the Si3N4 film have affinity to negative charge, the density of the capturing centers is greatly reduced by adding an easily negatively chargeable substance such as chlorine to the film. Therefore, hopping conduction due to an electric field generated by caputured electrons is very low and a storage holding property is improved. Because the density distribution of the captured electrons is limited within the vicinity of the boundary between the SiO2 and the Si3N4 films, an erasing property is improved. This results in improving the characteristics of a nonvolatile n-channel MOSFET memory which can act rapidly.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15032878A JPS5575268A (en) | 1978-12-04 | 1978-12-04 | Manufacturing method of nonvolatile semiconductor memory |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15032878A JPS5575268A (en) | 1978-12-04 | 1978-12-04 | Manufacturing method of nonvolatile semiconductor memory |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5575268A true JPS5575268A (en) | 1980-06-06 |
| JPS6239548B2 JPS6239548B2 (en) | 1987-08-24 |
Family
ID=15494608
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15032878A Granted JPS5575268A (en) | 1978-12-04 | 1978-12-04 | Manufacturing method of nonvolatile semiconductor memory |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5575268A (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4917981A (en) * | 1972-06-07 | 1974-02-16 |
-
1978
- 1978-12-04 JP JP15032878A patent/JPS5575268A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4917981A (en) * | 1972-06-07 | 1974-02-16 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6239548B2 (en) | 1987-08-24 |
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