JPS57100723A - Electronic parts - Google Patents

Electronic parts

Info

Publication number
JPS57100723A
JPS57100723A JP17648080A JP17648080A JPS57100723A JP S57100723 A JPS57100723 A JP S57100723A JP 17648080 A JP17648080 A JP 17648080A JP 17648080 A JP17648080 A JP 17648080A JP S57100723 A JPS57100723 A JP S57100723A
Authority
JP
Japan
Prior art keywords
active region
ion implantation
insulating layers
ground
semiconductor substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17648080A
Other languages
Japanese (ja)
Inventor
Hiroyuki Mitsuyama
Masateru Kubo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP17648080A priority Critical patent/JPS57100723A/en
Publication of JPS57100723A publication Critical patent/JPS57100723A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation

Landscapes

  • Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To prevent the variation in the characteristics of a transistor by forming an insulating layer for protecting the active region of low density formed by an ion implantation in a semiconductor substrate from the influence of impurity varying the density. CONSTITUTION:In a semiconductor substrate are provided an active region formed by ion implantation, insulating layers 4, 4' covering the active region, and conductive films 20, 20' connected to ground or negative level and covered via the insulating layers. For example, a conductive film 20 of aluminum or polysilicon is formed via insulating layers 4, 4' on a P type layer 2 formed by ion implantation on the substrate 1, is connected to ground or negative level to adsorb fixedly Na<+> ions, thereby improving the electric characteristics of the electronic part and proving the quality over long period of time.
JP17648080A 1980-12-16 1980-12-16 Electronic parts Pending JPS57100723A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17648080A JPS57100723A (en) 1980-12-16 1980-12-16 Electronic parts

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17648080A JPS57100723A (en) 1980-12-16 1980-12-16 Electronic parts

Publications (1)

Publication Number Publication Date
JPS57100723A true JPS57100723A (en) 1982-06-23

Family

ID=16014398

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17648080A Pending JPS57100723A (en) 1980-12-16 1980-12-16 Electronic parts

Country Status (1)

Country Link
JP (1) JPS57100723A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6826318B2 (en) 2001-10-12 2004-11-30 Fujitsu Limited Variable polarization plane rotator and optical device using same
US7439146B1 (en) * 2000-08-30 2008-10-21 Agere Systems Inc. Field plated resistor with enhanced routing area thereover

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7439146B1 (en) * 2000-08-30 2008-10-21 Agere Systems Inc. Field plated resistor with enhanced routing area thereover
US6826318B2 (en) 2001-10-12 2004-11-30 Fujitsu Limited Variable polarization plane rotator and optical device using same
US6931165B2 (en) 2001-10-12 2005-08-16 Fujitsu Limited Variable polarization plane rotator and optical device using same

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