JPS5573990A - Semiconductor memory device - Google Patents

Semiconductor memory device

Info

Publication number
JPS5573990A
JPS5573990A JP14766978A JP14766978A JPS5573990A JP S5573990 A JPS5573990 A JP S5573990A JP 14766978 A JP14766978 A JP 14766978A JP 14766978 A JP14766978 A JP 14766978A JP S5573990 A JPS5573990 A JP S5573990A
Authority
JP
Japan
Prior art keywords
power supply
access time
bit lines
potential
sosmosfet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14766978A
Other languages
Japanese (ja)
Other versions
JPS6032280B2 (en
Inventor
Nobuo Sasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP53147669A priority Critical patent/JPS6032280B2/en
Publication of JPS5573990A publication Critical patent/JPS5573990A/en
Publication of JPS6032280B2 publication Critical patent/JPS6032280B2/en
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
    • G11C11/419—Read-write [R-W] circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)

Abstract

PURPOSE:To elevate access time of the memory of SOSMOS FET configurations by connecting the bit lines to the power supply through several series transistors. CONSTITUTION:The bit lines B1 and B2 are connected to the power supply Vcc in series of the respective several transistors such as two, etc. controlled by the inversion enable signal, by the types of FETQ9 and Q9'-Q12 and Q12', and the pre-charge potential of the lines B1 and B2 becomes the voltage potential of the difference of the power supply and two times of the threshold voltage of each FETQ9-Q12 and Q9'-Q12'. Accordingly, even if case of SOSMOSFET configurations by which the semiconductor layer always becomes a depletion layer due to a thin semiconductor layer of the gate oxide film, the access time is shortened through the bit lines which are pre-charged to the fittest potential. Resulting from the foregoing, the access time of the SOSMOSFET memory is elevated.
JP53147669A 1978-11-29 1978-11-29 semiconductor storage device Expired JPS6032280B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP53147669A JPS6032280B2 (en) 1978-11-29 1978-11-29 semiconductor storage device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP53147669A JPS6032280B2 (en) 1978-11-29 1978-11-29 semiconductor storage device

Publications (2)

Publication Number Publication Date
JPS5573990A true JPS5573990A (en) 1980-06-04
JPS6032280B2 JPS6032280B2 (en) 1985-07-26

Family

ID=15435586

Family Applications (1)

Application Number Title Priority Date Filing Date
JP53147669A Expired JPS6032280B2 (en) 1978-11-29 1978-11-29 semiconductor storage device

Country Status (1)

Country Link
JP (1) JPS6032280B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59124083A (en) * 1982-12-29 1984-07-18 Seiko Epson Corp Integrated storage circuit

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59124083A (en) * 1982-12-29 1984-07-18 Seiko Epson Corp Integrated storage circuit

Also Published As

Publication number Publication date
JPS6032280B2 (en) 1985-07-26

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