JPS5573450A - Preparation of silicon crystal and its device - Google Patents

Preparation of silicon crystal and its device

Info

Publication number
JPS5573450A
JPS5573450A JP15191979A JP15191979A JPS5573450A JP S5573450 A JPS5573450 A JP S5573450A JP 15191979 A JP15191979 A JP 15191979A JP 15191979 A JP15191979 A JP 15191979A JP S5573450 A JPS5573450 A JP S5573450A
Authority
JP
Japan
Prior art keywords
preparation
silicon crystal
silicon
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15191979A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6228119B2 (cg-RX-API-DMAC7.html
Inventor
Guraapumaiyaa Yoozefu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Publication of JPS5573450A publication Critical patent/JPS5573450A/ja
Publication of JPS6228119B2 publication Critical patent/JPS6228119B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/002—Continuous growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/001—Continuous growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/14—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method characterised by the seed, e.g. its crystallographic orientation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/007—Pulling on a substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/06—Non-vertical pulling
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/36—Single-crystal growth by pulling from a melt, e.g. Czochralski method characterised by the seed, e.g. its crystallographic orientation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
JP15191979A 1978-11-23 1979-11-22 Preparation of silicon crystal and its device Granted JPS5573450A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2850805A DE2850805C2 (de) 1978-11-23 1978-11-23 Verfahren zum Herstellen von scheiben- oder bandförmigen Siliziumkristallen mit Kolumnarstruktur für Solarzellen

Publications (2)

Publication Number Publication Date
JPS5573450A true JPS5573450A (en) 1980-06-03
JPS6228119B2 JPS6228119B2 (cg-RX-API-DMAC7.html) 1987-06-18

Family

ID=6055419

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15191979A Granted JPS5573450A (en) 1978-11-23 1979-11-22 Preparation of silicon crystal and its device

Country Status (3)

Country Link
US (1) US4305776A (cg-RX-API-DMAC7.html)
JP (1) JPS5573450A (cg-RX-API-DMAC7.html)
DE (1) DE2850805C2 (cg-RX-API-DMAC7.html)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59217692A (ja) * 1983-05-25 1984-12-07 Rikagaku Kenkyusho 薄膜単結晶の製造方法
JPS60234316A (ja) * 1984-04-09 1985-11-21 シーメンス、アクチエンゲゼルシヤフト 太陽電池用シリコン結晶体の製造方法
JPS6140897A (ja) * 1984-07-31 1986-02-27 シーメンス、アクチエンゲゼルシヤフト リボン状シリコン結晶の製造方法と装置
CN104726932A (zh) * 2015-04-09 2015-06-24 江苏盎华光伏工程技术研究中心有限公司 采用籽晶引导的硅片制作设备及其控制方法

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2059292A (en) * 1979-09-28 1981-04-23 Honeywell Inc Growing silicon films on substrates
DE3010557C2 (de) * 1980-03-19 1986-08-21 Siemens AG, 1000 Berlin und 8000 München Verfahren und Vorrichtung zum Herstellen von großflächigen Siliziumkörpern für Solarzellen
DE3017842A1 (de) * 1980-05-09 1981-11-12 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen von platten- oder bandfoermigen siliziumkristallkoerpern mit einer der kolumnarstruktor gleichwertigen saeulenstruktur durch sintern
DE3017923A1 (de) * 1980-05-09 1981-11-12 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen von platten- oder bandfoermigen siliziumkristallkoerpern mit einer der kolumnarstruktur gleichwertigen saeulenstruktur durch sintern
DE3107596A1 (de) * 1981-02-27 1982-10-21 Heliotronic Forschungs- und Entwicklungsgesellschaft für Solarzellen-Grundstoffe mbH, 8263 Burghausen "verfahren zur herstellung von halbleiterscheiben"
AU8670782A (en) * 1981-08-17 1983-02-24 Semix, Inc. Semicrystalline silicon sheets
US4778478A (en) * 1981-11-16 1988-10-18 University Of Delaware Method of making thin film photovoltaic solar cell
FR2529189B1 (fr) * 1982-06-25 1985-08-09 Comp Generale Electricite Procede de fabrication d'une bande de silicium polycristallin pour photophiles
DE3231326A1 (de) * 1982-08-23 1984-02-23 Siemens AG, 1000 Berlin und 8000 München Vorrichtung zum herstellen von grossflaechigen, bandfoermigen siliziumkoerpern fuer solarzellen
DE3306515A1 (de) * 1983-02-24 1984-08-30 Siemens AG, 1000 Berlin und 8000 München Vorrichtung zum herstellen von grossflaechigen, bandfoermigen siliziumkoerpern fuer solarzellen
DE3338335A1 (de) * 1983-10-21 1985-05-09 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen von grossflaechigen siliziumkristallkoerpern fuer solarzellen
DE3560643D1 (en) * 1984-04-09 1987-10-22 Siemens Ag Process for producing large-surface silicon crystal bodies for solar cells
US4599244A (en) * 1984-07-11 1986-07-08 Siemens Aktiengesellschaft Method large-area silicon bodies
US4643797A (en) * 1984-08-28 1987-02-17 Siemens Aktiengesellschaft Method for the manufacture of large area silicon crystal bodies for solar cells
DE3520067A1 (de) * 1985-06-04 1986-12-04 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen von bandfoermigen siliziumkristallen mit horizontaler ziehrichtung
US4677250A (en) * 1985-10-30 1987-06-30 Astrosystems, Inc. Fault tolerant thin-film photovoltaic cell
US4772564A (en) * 1985-10-30 1988-09-20 Astrosystems, Inc. Fault tolerant thin-film photovoltaic cell fabrication process
US4781766A (en) * 1985-10-30 1988-11-01 Astrosystems, Inc. Fault tolerant thin-film photovoltaic cell and method
JPS62291977A (ja) * 1986-06-06 1987-12-18 シ−メンス、アクチエンゲゼルシヤフト 太陽電池用シリコン盤の切り出し方法と装置
DE3736341A1 (de) * 1987-10-27 1989-05-11 Siemens Ag Verfahren zum herstellen von bandfoermigen siliziumkristallen durch horizontales ziehen aus der schmelze
JP3656821B2 (ja) 1999-09-14 2005-06-08 シャープ株式会社 多結晶シリコンシートの製造装置及び製造方法
JP4111669B2 (ja) 1999-11-30 2008-07-02 シャープ株式会社 シート製造方法、シートおよび太陽電池
NL1030285C2 (nl) * 2005-10-27 2007-05-01 Rgs Dev B V Werkwijze en inrichting voor het fabriceren van metalen folies met een patroon.
DE102010026289B4 (de) * 2010-07-06 2014-10-30 Sameday Media Gmbh Solarzelle und Verfahren

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3341361A (en) * 1963-02-21 1967-09-12 Union Carbide Corp Process for providing a silicon sheet
DE2508803C3 (de) 1975-02-28 1982-07-08 Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen Verfahren zur Herstellung plattenförmiger Siliciumkristalle mit Kolumnarstruktur
DE2621145C3 (de) * 1976-05-13 1978-11-02 Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.V., 8000 Muenchen Verfahren zur Herstellung von Siliciumschichten
US4169739A (en) * 1978-04-12 1979-10-02 Semix, Incorporated Method of making silicon-impregnated foraminous sheet by partial immersion and capillary action

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59217692A (ja) * 1983-05-25 1984-12-07 Rikagaku Kenkyusho 薄膜単結晶の製造方法
JPS60234316A (ja) * 1984-04-09 1985-11-21 シーメンス、アクチエンゲゼルシヤフト 太陽電池用シリコン結晶体の製造方法
JPS6140897A (ja) * 1984-07-31 1986-02-27 シーメンス、アクチエンゲゼルシヤフト リボン状シリコン結晶の製造方法と装置
CN104726932A (zh) * 2015-04-09 2015-06-24 江苏盎华光伏工程技术研究中心有限公司 采用籽晶引导的硅片制作设备及其控制方法
CN104726932B (zh) * 2015-04-09 2017-06-06 江苏盎华光伏工程技术研究中心有限公司 采用籽晶引导的硅片制作设备及其控制方法

Also Published As

Publication number Publication date
DE2850805A1 (de) 1980-06-12
US4305776A (en) 1981-12-15
JPS6228119B2 (cg-RX-API-DMAC7.html) 1987-06-18
DE2850805C2 (de) 1986-08-28

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