JPS556850A - Charge transfer type semiconductor device - Google Patents

Charge transfer type semiconductor device

Info

Publication number
JPS556850A
JPS556850A JP7900378A JP7900378A JPS556850A JP S556850 A JPS556850 A JP S556850A JP 7900378 A JP7900378 A JP 7900378A JP 7900378 A JP7900378 A JP 7900378A JP S556850 A JPS556850 A JP S556850A
Authority
JP
Japan
Prior art keywords
output
semiconductor device
type semiconductor
charge transfer
transfer type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7900378A
Other languages
Japanese (ja)
Inventor
Kazuyasu Fujishima
Michihiro Yamada
Tetsuo Tada
Koichi Nagasawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP7900378A priority Critical patent/JPS556850A/en
Publication of JPS556850A publication Critical patent/JPS556850A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

PURPOSE:To reduce the width of the transfer electrode at the output section sufficiently, eliminating contact hole peculiar to the in and output sections by means of a depression-mode-gate arranged at the in and output sections. CONSTITUTION:An in/output transfer electrode 1' is formed in common to respective channels similar to other transfer electrodes. To enable multiplex operation of input and output, a n-type impurity such as phosphours is introduced to a part of channel at the in/output section by an ion injection, whereby the upper portion of the surface of the semiconductor substrate is inverted to an n-type conductor. Thus, a gate 9 of depression mode is formed.
JP7900378A 1978-06-28 1978-06-28 Charge transfer type semiconductor device Pending JPS556850A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7900378A JPS556850A (en) 1978-06-28 1978-06-28 Charge transfer type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7900378A JPS556850A (en) 1978-06-28 1978-06-28 Charge transfer type semiconductor device

Publications (1)

Publication Number Publication Date
JPS556850A true JPS556850A (en) 1980-01-18

Family

ID=13677771

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7900378A Pending JPS556850A (en) 1978-06-28 1978-06-28 Charge transfer type semiconductor device

Country Status (1)

Country Link
JP (1) JPS556850A (en)

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