JPS5561049A - Radiator for semiconductor - Google Patents

Radiator for semiconductor

Info

Publication number
JPS5561049A
JPS5561049A JP13425978A JP13425978A JPS5561049A JP S5561049 A JPS5561049 A JP S5561049A JP 13425978 A JP13425978 A JP 13425978A JP 13425978 A JP13425978 A JP 13425978A JP S5561049 A JPS5561049 A JP S5561049A
Authority
JP
Japan
Prior art keywords
semiconductor
block
ceramic
thickness
insulation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13425978A
Other languages
Japanese (ja)
Inventor
Tatsuya Koizumi
Shuichi Furuya
Koji Matsumoto
Kimiko Kurata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Furukawa Electric Co Ltd
Original Assignee
Furukawa Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Furukawa Electric Co Ltd filed Critical Furukawa Electric Co Ltd
Priority to JP13425978A priority Critical patent/JPS5561049A/en
Publication of JPS5561049A publication Critical patent/JPS5561049A/en
Pending legal-status Critical Current

Links

Landscapes

  • Cooling Or The Like Of Electrical Apparatus (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

PURPOSE: To obtain such radiator as is small in thermal resistance and superior in insulation by providing a ceramic flame coating layer at a contact zone of a semiconductor mounting block and a radiating unit or a semiconductor.
CONSTITUTION: A metallic ceramic high in heat conductivity and large in dielectric strength like alumina, silica, etc. is fused to fine grain and injected. A ceramic flame coating layer 11 is provided on the outer periphery of a pipe 5 at a semiconductor block 10 mounting part or the inner periphery of the block at the other end of a radiating unit 3 with a plural number of radiation fins provided on one end of the pipe 5. The block 10 is made of Cu, Al, etc., on which a semiconductor 4 is mounted. The ceramic layer is arranged to have a thickness at 50W300μ. Where the thickness is below 50μ, insulation is not secured thoroughly; where the thickness exceeds 300μ, thermal resistance increases.
COPYRIGHT: (C)1980,JPO&Japio
JP13425978A 1978-10-31 1978-10-31 Radiator for semiconductor Pending JPS5561049A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13425978A JPS5561049A (en) 1978-10-31 1978-10-31 Radiator for semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13425978A JPS5561049A (en) 1978-10-31 1978-10-31 Radiator for semiconductor

Publications (1)

Publication Number Publication Date
JPS5561049A true JPS5561049A (en) 1980-05-08

Family

ID=15124106

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13425978A Pending JPS5561049A (en) 1978-10-31 1978-10-31 Radiator for semiconductor

Country Status (1)

Country Link
JP (1) JPS5561049A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5954950U (en) * 1982-09-30 1984-04-10 松下電器産業株式会社 Hybrid integrated circuit device
JPS60937U (en) * 1983-06-15 1985-01-07 富士通株式会社 Semiconductor chip heat dissipation structure
JPS6183095U (en) * 1984-11-06 1986-06-02
US4688077A (en) * 1982-03-29 1987-08-18 Fujitsu Limited Semiconductor device having radiator
US7440280B2 (en) * 2006-03-31 2008-10-21 Hong Kong Applied Science & Technology Research Institute Co., Ltd Heat exchange enhancement
US7593229B2 (en) * 2006-03-31 2009-09-22 Hong Kong Applied Science & Technology Research Institute Co. Ltd Heat exchange enhancement

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4688077A (en) * 1982-03-29 1987-08-18 Fujitsu Limited Semiconductor device having radiator
JPS5954950U (en) * 1982-09-30 1984-04-10 松下電器産業株式会社 Hybrid integrated circuit device
JPS60937U (en) * 1983-06-15 1985-01-07 富士通株式会社 Semiconductor chip heat dissipation structure
JPS6350854Y2 (en) * 1983-06-15 1988-12-27
JPS6183095U (en) * 1984-11-06 1986-06-02
US7440280B2 (en) * 2006-03-31 2008-10-21 Hong Kong Applied Science & Technology Research Institute Co., Ltd Heat exchange enhancement
US7593229B2 (en) * 2006-03-31 2009-09-22 Hong Kong Applied Science & Technology Research Institute Co. Ltd Heat exchange enhancement
US7651253B2 (en) 2006-03-31 2010-01-26 Hong Kong Applied Science & Technology Research Institute Co., Ltd Heat exchange enhancement
US7800898B2 (en) 2006-03-31 2010-09-21 Hong Kong Applied Science And Technology Research Institute Co. Ltd. Heat exchange enhancement
US7826214B2 (en) 2006-03-31 2010-11-02 Hong Kong Applied Science And Technology Research Institute Co., Ltd. Heat exchange enhancement

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