JPS6350854Y2 - - Google Patents
Info
- Publication number
- JPS6350854Y2 JPS6350854Y2 JP1983091509U JP9150983U JPS6350854Y2 JP S6350854 Y2 JPS6350854 Y2 JP S6350854Y2 JP 1983091509 U JP1983091509 U JP 1983091509U JP 9150983 U JP9150983 U JP 9150983U JP S6350854 Y2 JPS6350854 Y2 JP S6350854Y2
- Authority
- JP
- Japan
- Prior art keywords
- heat
- heat dissipation
- substrate
- block
- semiconductor chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 21
- 230000017525 heat dissipation Effects 0.000 claims description 17
- 239000000758 substrate Substances 0.000 claims description 12
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 239000007788 liquid Substances 0.000 description 4
- 238000004806 packaging method and process Methods 0.000 description 4
- 230000005855 radiation Effects 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49171—Fan-out arrangements
Landscapes
- Cooling Or The Like Of Electrical Apparatus (AREA)
Description
【考案の詳細な説明】
(a) 考案の技術分野
本考案は半導体チツプの放熱構造に係り、特に
高電力混成集積回路素子の放熱構造に関する。[Detailed Description of the Invention] (a) Technical Field of the Invention The present invention relates to a heat dissipation structure for a semiconductor chip, and particularly to a heat dissipation structure for a high power hybrid integrated circuit device.
(b) 技術の背景
従来の混成集積回路素子は比較的低電力レベル
の分野に多く用いられていたために、搭載する半
導体チツプの放熱等については特別な配慮はなさ
れていなかつた。しかし電源回路、各種モータの
制御回路、電力増幅回路等の高電力レベルの分野
にも混成集積回路素子が多く使用されるようにな
るに伴つて、その放熱構造が問題になり高密度実
装に適した放熱構造の開発が要求されるようにな
つてきた。(b) Background of the technology Since conventional hybrid integrated circuit devices have been widely used in fields with relatively low power levels, no special consideration has been given to the heat dissipation of the semiconductor chips on which they are mounted. However, as hybrid integrated circuit elements are increasingly used in high-power fields such as power supply circuits, control circuits for various motors, and power amplifier circuits, their heat dissipation structure has become a problem, making them unsuitable for high-density packaging. There is a growing demand for the development of heat dissipation structures.
(c) 従来技術と問題点
第1図は従来の半導体チツプの放熱構造であ
る。熱抵抗が低く、且つ熱容量の大きい金属、例
えば銅またはアルミニウム製のブロツク1に半導
体チツプ2を搭載し、これを基板3に固着して基
板3を通して放熱している。そして半導体チツプ
2の端子と図示してない基板3上の回路の間はボ
ンデイングワイヤ4で接続している。しかし複数
個の高電力半導体チツプを同一の基板3に取りつ
ける場合、各々の半導体チツプが占める面積を充
分大きく取つておかなければ、基板3を通して
各々の半導体チツプの間に熱干渉が生じ各々の半
導体チツプの温度が上昇する等の問題があり、従
来の放熱構造では高電力半導体チツプの高密度実
装ができなかつた。即ち放熱構造の不備が高電力
半導体チツプの高密度実装を阻害する要因の一つ
となつている。(c) Prior art and problems Figure 1 shows the heat dissipation structure of a conventional semiconductor chip. A semiconductor chip 2 is mounted on a block 1 made of a metal with low thermal resistance and large heat capacity, such as copper or aluminum, and this is fixed to a substrate 3 to radiate heat through the substrate 3. Terminals of the semiconductor chip 2 and circuits on a substrate 3 (not shown) are connected by bonding wires 4. However, when multiple high-power semiconductor chips are mounted on the same substrate 3, unless the area occupied by each semiconductor chip is sufficiently large, thermal interference will occur between the semiconductor chips through the substrate 3, causing damage to each semiconductor. Conventional heat dissipation structures have not been able to mount high-power semiconductor chips in high density due to problems such as an increase in chip temperature. That is, deficiencies in the heat dissipation structure are one of the factors that impede high-density packaging of high-power semiconductor chips.
(d) 考案の目的
本考案の目的はヒートシンクの熱抵抗を低減し
て放熱を良くすることにより、高電力半導体チツ
プの高密度実装を可能にする放熱構造を提供する
ことにある。(d) Purpose of the invention The purpose of the invention is to provide a heat dissipation structure that enables high-density packaging of high-power semiconductor chips by reducing the thermal resistance of the heat sink and improving heat dissipation.
(e) 考案の構成
そしてこの目的は、金属のブロツクと放熱フイ
ンをヒートパイプで結合して一体化したヒートシ
ンクの該ブロツクの下面が基板に固着され、該ブ
ロツクの上面に電気的絶縁板を介して半導体チツ
プを搭載し、該半導体チツプと該基板上の回路と
の間をボンデイングワイヤで接続するように構成
されたことで達成している。(e) Structure of the invention The purpose of this heat sink is to integrate a metal block and heat dissipation fins by connecting them with a heat pipe.The lower surface of the block is fixed to a substrate, and the upper surface of the block is attached with an electrically insulating plate interposed therebetween. This is achieved by mounting a semiconductor chip on the board and connecting the semiconductor chip and the circuit on the board with bonding wires.
(f) 考案の実施例
ヒートパイプは金属製パイプの内側にウイツク
と呼ばれるポーラスな材料を内貼りし、パイプの
内部を一度真空に引いた後ウイツクをすつかり濡
らす程度の少量の液体を封入して密封したもので
ある。一端を加熱してウイツクの中に含まれてい
る液体を温めると、ヒートパイプの中は飽和蒸気
圧であるので、この温められた封入液は直ちに蒸
発して多量の熱を吸収し、速やかにヒートパイプ
の他の端に移動する。そこでヒートパイプの他の
端を冷却してやると蒸気化した封入液は直ちに元
の液体に戻つてウイツクの中に吸収される。その
特性として熱の移動が速やかで、且つ熱の輸送量
が多い。したがつて熱の吸収側においては熱抵抗
が低く周辺が均一に冷却される。本考案はヒート
パイプのかかる特性に着眼してなされたもので、
以下添付図により本考案の実施例を説明する。第
2図は本考案の一実施例であり、第1図と同じ対
象物は同一符号で表す。(f) Example of the idea A heat pipe is a metal pipe in which a porous material called wick is pasted inside the pipe, and after the inside of the pipe is once evacuated, a small amount of liquid is filled in, just enough to completely wet the wick. It is sealed. When one end of the heat pipe is heated to warm the liquid contained in the pipe, since the inside of the heat pipe is at saturated vapor pressure, the heated filled liquid immediately evaporates and absorbs a large amount of heat. Move to the other end of the heat pipe. When the other end of the heat pipe is cooled, the vaporized liquid immediately returns to its original state and is absorbed into the wick. Its characteristics include rapid heat transfer and a large amount of heat transport. Therefore, on the heat absorption side, thermal resistance is low and the surrounding area is uniformly cooled. This invention was created by focusing on the characteristics of heat pipes.
Embodiments of the present invention will be described below with reference to the accompanying drawings. FIG. 2 shows an embodiment of the present invention, and the same objects as in FIG. 1 are denoted by the same symbols.
図においてヒートシンク5は、熱抵抗の低い金
属例えば銅またはアルミニウム製のブロツク6、
ヒートパイプ7および放熱フイン8で構成され、
ヒートパイプ7の熱吸収側はブロツク6の孔9
に、またヒートパイプ7の熱放散剤は放熱フイン
8の孔10に嵌着して一体化されている。ブロツ
ク6の下面は基板3に固着され、上面には熱抵抗
が低く電気的絶縁性の高い板11、例えばセラミ
ツクの薄板等を介して一個乃至複数個の半導体チ
ツプ2を搭載している。またブロツク6の上面に
は中継端子板12を設けてあり、半導体チツプ2
の端子と中継端子板12の間、および中継端子板
12と図示してない基板3上の回路の間は図示し
てないボンデイングワイヤで接続している。なお
中継端子板12を無くして半導体チツプ2の端子
を図示してない基板3上の回路を直接接続するこ
とも可能である。 In the figure, the heat sink 5 is a block 6 made of a metal with low thermal resistance, such as copper or aluminum.
Consists of a heat pipe 7 and a heat radiation fin 8,
The heat absorption side of the heat pipe 7 is connected to the hole 9 of the block 6.
Furthermore, the heat dissipation agent of the heat pipe 7 is fitted into the hole 10 of the heat dissipation fin 8 and integrated. The lower surface of the block 6 is fixed to the substrate 3, and one or more semiconductor chips 2 are mounted on the upper surface via a plate 11 having low thermal resistance and high electrical insulation, such as a thin ceramic plate. Further, a relay terminal plate 12 is provided on the upper surface of the block 6, and a relay terminal plate 12 is provided on the upper surface of the block 6.
A bonding wire (not shown) is used to connect between the terminal and the relay terminal plate 12, and between the relay terminal plate 12 and the circuit on the substrate 3 (not shown). It is also possible to omit the relay terminal plate 12 and directly connect the terminals of the semiconductor chip 2 to a circuit on the substrate 3 (not shown).
(g) 考案の効果
以上述べたように本考案によれば、ヒートシン
クの熱抵抗の低減、熱の大量輸送、大量放熱がで
きるため、高電力半導体の高密度実装を可能にす
ると共に、温度の均一化によつて回路の高出力
化、安定化を可能にする放熱構造を提供すること
ができる。(g) Effects of the invention As described above, the invention enables the reduction of the thermal resistance of the heat sink, the transport of a large amount of heat, and the radiation of a large amount of heat, making it possible to implement high-density packaging of high-power semiconductors and to reduce the temperature. Through uniformity, it is possible to provide a heat dissipation structure that enables high output and stabilization of the circuit.
第1図は従来の半導体チツプの放熱構造、第2
図は本考案の一実施例である。
図において2は半導体チツプ、3は基板、5は
ヒートシンク、6はブロツク、7はヒートパイ
プ、8は放熱フイン、11は絶縁板、12は中継
端子板を示す。
Figure 1 shows the heat dissipation structure of a conventional semiconductor chip;
The figure shows one embodiment of the present invention. In the figure, 2 is a semiconductor chip, 3 is a substrate, 5 is a heat sink, 6 is a block, 7 is a heat pipe, 8 is a radiation fin, 11 is an insulating plate, and 12 is a relay terminal board.
Claims (1)
結合して一体化したヒートシンクの該ブロツクの
下面が基板に固着され、該ブロツクの上面に電気
的絶縁板を介して半導体チツプを搭載し、該半導
体チツプと該基板上の回路との間をボンデイング
ワイヤで接続するように構成されたことを特徴と
する半導体チツプの放熱構造。 A heat sink is made by combining a metal block and a heat dissipation fin with a heat pipe, and the lower surface of the block is fixed to a substrate, and a semiconductor chip is mounted on the upper surface of the block via an electrically insulating plate. A heat dissipation structure for a semiconductor chip, characterized in that it is configured to be connected to a circuit on the substrate using a bonding wire.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1983091509U JPS60937U (en) | 1983-06-15 | 1983-06-15 | Semiconductor chip heat dissipation structure |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1983091509U JPS60937U (en) | 1983-06-15 | 1983-06-15 | Semiconductor chip heat dissipation structure |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS60937U JPS60937U (en) | 1985-01-07 |
JPS6350854Y2 true JPS6350854Y2 (en) | 1988-12-27 |
Family
ID=30221504
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1983091509U Granted JPS60937U (en) | 1983-06-15 | 1983-06-15 | Semiconductor chip heat dissipation structure |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS60937U (en) |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5561049A (en) * | 1978-10-31 | 1980-05-08 | Furukawa Electric Co Ltd:The | Radiator for semiconductor |
JPS57157551A (en) * | 1981-03-25 | 1982-09-29 | Hitachi Ltd | Heat sink device |
-
1983
- 1983-06-15 JP JP1983091509U patent/JPS60937U/en active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5561049A (en) * | 1978-10-31 | 1980-05-08 | Furukawa Electric Co Ltd:The | Radiator for semiconductor |
JPS57157551A (en) * | 1981-03-25 | 1982-09-29 | Hitachi Ltd | Heat sink device |
Also Published As
Publication number | Publication date |
---|---|
JPS60937U (en) | 1985-01-07 |
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